32results about How to "Achieve continuous growth" patented technology

The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.

The invention provides an active cooling device and method for laser repairing of a single crystal turbine blade. The device comprises an air compressor, a heat exchanger and an annular cooling device. The air compressor compresses air to be cooled into high-speed and high-pressure airflow, and the airflow is introduced into the heat exchanger. After the introduced airflow is cooled by the heat exchanger, the airflow is introduced into the annular cooling device. The annular cooling device is arranged above a workbench of a laser cladding system and arranged around a workpiece. According to the active cooling device and method for laser repairing of the single crystal turbine blade, the volume and temperature of the cooled airflow and the position and angle of a cooling nozzle are adjusted, so that the best active cooling effect is achieved in the laser repairing process.

The invention discloses a reactor for realizing static culture and continuous growth of aerobic filamentous biofilm, which comprises a feed tank, a peristaltic pump, an aeration pump, a gas flow meter, a reaction tank, a carrier bracket, an upper partition, an upper conduit, Vessel carrier, lower baffle, downcomer, support, microporous aeration tube, enclosure; the gas pumped by the present invention enters the microporous aeration tube through the adjustment of the gas flow meter to form air bubbles, enclosure and support The bubbles are gathered, and the bubbles pass through the hollow channel formed by the downcomer, the vascular carrier, and the upper catheter, which promotes and drives the waste water to flow upward through the inside of the vascular carrier, avoiding the direct impact of the air bubbles and waste water on the aerobic filamentous biofilm, and realizing the reactor The aerobic filamentous biofilm in the vascular carrier obtains oxygen and nutrients from the inside of the vascular carrier, thereby avoiding the aging and death of the filamentous biofilm close to the vascular carrier in the reactor due to hypoxia and nutrition, and solving the problem of filamentous The problem of complete detachment of biofilms from vascular supports.

The invention discloses a method for directly preparing ITO nanowires by using an organic macromolecular material as a catalyst. The method first adopts a self-assembly method to deposit a single layer of polystyrene beads on a substrate, and then utilizes an electron beam evaporation method to deposit Polystyrene pellets were used as catalysts for the preparation of ITO nanowires, and then the polystyrene was removed by chloroform cleaning or annealing, so as to obtain needle-like ITO nanowires with uniform distribution over a large area. The present invention uses organic macromolecular materials as catalysts to prepare ITO nanowires, and has the characteristics of cheap (low cost), low temperature (280-320° C.), simple operation steps, and easy preparation of required materials. The prepared ITO nanowires The length can reach the order of microns, the end is needle-shaped, good thermal stability, good electrical conductivity and light transmission performance, and has strong application value in field emission displays, nanosensors, LED light-emitting devices and solar cells.

The invention belongs to the technical field of carbon nanotubes, and in particular relates to a batch continuous production equipment of carbon nanotubes, including a carbon source cracking device and a carbon nanotube growth device; the carbon source cracking device includes: a carbon source cracking chamber, a first heating assembly , a carbon source inlet and a carbon source gas outlet; the carbon nanotube growth device includes: a carbon nanotube growth chamber, a transport assembly, a second heating assembly, an air inlet, and a gas outlet; wherein, the transport assembly is used to continuously transport carbon The nanotube growth substrate, the carbon source gas outlet is connected to the air inlet of the carbon nanotube growth device; the first heating component provides the cracking temperature for the carbon source cracking chamber; the second heating component has a heating channel, and the transmission component The heating channel is installed in the heating channel, and the heating channel is used for heating the carbon nanotube growth substrate entering the heating channel.

The invention discloses a method for preparing printing electron by adopting catalytic type nano particles. The method adopts the following steps of: printing resin on a substrate, printing the catalytic type nano particles onto the resin after the resin is solidified or half solidified to form a circuit with electric conductivity and catalytic property, then carrying out chemical plating treatment on the circuit and plating a metal layer with high electric conductivity so as to obtain an electronic circuit. The printing electron prepared by the method lowers the processing cost greatly, the obtained electronic circuit has the advantages of high electric conductivity, high stability and the like, and the application of electron for printing and manufacturing in a plurality of fields of a battery, a display, a sensor, an RFID tag, an interactive package, a solar panel, a loudspeaker and the like can be pushed.

The invention discloses a continuous growth device for a carbon nano-tube. The continuous growth device comprises a heating room, a substrate, a catalyst film and a heating device, wherein the heating room is provided with a heating chamber, and a vent hole communicated to the heating chamber is formed in the heating room; the substrate is located inside the heating chamber, the catalyst film is formed on the surface of the substrate, first through holes are formed in the substrate, and the catalyst film comprises second through holes communicated to the first through holes; and the heating device is used for heating the heating chamber. The plurality of holes in the porous substrate are communicated with the plurality of holes in the catalyst film located below the porous substrate, and reactant gas is introduced from the upper part of the porous substrate and can continuously flow into the plurality of holes in the catalyst film through the plurality of holes in the substrate, so that the carbon nano-tube can continuously grow. Preferably, the growth direction of the carbon nano-tube in an improved device is changed to be vertical and downward, therefore, compared with the growth speed of the carbon nano-tube which vertically and upwards grows, the growth speed is increased under the action of gravity, and furthermore, the technical effect of continuous and rapid growth is achieved.

The invention discloses a transparent electrode based on an ultra-thin metallic film. The transparent electrode orderly comprises a transparent substrate, a metal layer and a metal oxide layer from bottom to top, wherein the thickness of the metal layer is 3 to 12nm. The substrate is modified by a monomolecular self-assembled layer; an ultra-thin metal layer is directly deposited on the substrate, and the continuity and conductivity of the ultra-thin metallic film are improved through the function of the monomolecular self-assembled layer; or through the co-deposition of metals, the continuous growth of the ultra-thin metallic film is realized directly on the substrate; and a metal oxide layer is deposited on the substrate as an antireflection layer, then a double-layer film system structure is obtained, and through the design and optimization of the double-layer film system structure, the maximization of transmittance is realized. The invention further discloses a preparation method of the transparent electrode based on the ultra-thin metallic film and an application thereof in photoelectric devices, wherein the transparent electrode can have good conductivity and high transmittance at the same time.

The invention relates to a two-dimensional transition metal chalcogenide film, a preparation method and application thereof. The two-dimensional transition metal chalcogenide refers to: ZrS2, ZrSe2, HfS2 and HfSe2; Monolayer or few-layer two-dimensional transition metal chalcogenides are deposited on boron substrates. The method provided by the invention can controllably synthesize a hexagonal or triangular two-dimensional transition metal chalcogenide film with a thickness of about 1 nm and a thickness of more than 1 μm on a boron nitride substrate, and realizes two-dimensional ZrS2, ZrSe2, HfS2 and controlled growth of large-area continuous thin films and monodomain regions of HfSe2.

The invention discloses an electrochemical metal 3D printing method for processing a tandem variable-diameter metal pillar structure, which belongs to the fields of metal 3D printing technology and electrochemical manufacturing technology. The electrolyte is extruded from the nozzle and contacts the cathode substrate to form a meniscus, which is divided into three parts: inverted cone, cylinder and cone; by adjusting the distance between the printing nozzle and the cathode substrate, the deposition layer is located on the Different parts of the meniscus; when the sedimentary layer is located in the conical, cylindrical and inverted conical shape of the meniscus, the sedimentary layer will be deposited along the shape of the liquid-gas interface of the meniscus to form a corresponding inverted conical metal Columns, cylindrical metal columns and tapered metal columns. When processing a tandem variable-diameter metal pillar structure, the electrochemical reaction first deposits cone pillars on the cathode substrate, followed by deposition of inverted cone pillars with a large diameter change gradient, and then alternately deposits tapered pillars-inverted cone pillars until processing Finish. The invention has the advantages of easy operation, low cost, good controllability and the like.

The invention discloses a method for preparing an amorphous silicon carbide ceramic-diamond composite coating. The method comprises the steps of cracking macromolecular organic silane serving as a precursor on the surface of a substrate by adopting a macromolecular precursor cracking method to generate an amorphous silicon carbide ceramic film, and then performing in-situ deposition on the micro diamond film by adopting a hot filament chemical vapor deposition method to obtain the amorphous silicon carbide ceramic-diamond composite coating. Compared with the prior art, the amorphous silicon carbide transition layer prepared by adopting the macromolecular precursor cracking method can be used for effectively blocking residual cobalt phase on the surface of a hard alloy matrix after two-step treatment and improving the rough surface of the hard alloy matrix; and the prepared amorphous silicon carbide ceramic-diamond composite coating has excellent adhesion and extremely high abrasion resistance, and is suitable for preparing high-quality diamond coating cutters.

The invention belongs to the technical field of luminescent quantum dot materials and particularly relates to a preparation method of a large-size core-shell structured quantum dot. The preparation method comprises steps as follows: a dispersion liquid of a shell source is added to a dispersion liquid of a core in a mode of dropwise adding at intervals in a protective atmosphere, and the core-shell structured quantum dot is obtained through in-situ growth. With the adoption of the mode of dropwise adding at intervals, matching from the inner layer of shell components to crystal lattices of themiddle layer is realized, influence of lattice imperfection on quantum yield is avoided, continuous growth of the shell is realized, and the core-shell structured quantum dot with large size and highyield is obtained finally. A result of an embodiment indicates that when the core-shell structured quantum dot with grain size being 15 nm is prepared with the method, the yield is as high as 80%; when the core-shell structured quantum dot with the grain size being 60 nm is prepared, the yield still keeps 50% or higher.

The invention relates to a method for manufacturing a gradient hard composite coating on the surface of a hard alloy. A dual-layer glow plasma surface alloying device is used, argon serves as plasma stimulation gas, a composite target manufactured through a refractory metal wire and a graphite plate serves as a source electrode, and refractory metal and a carbide composite cementation layer of the refractory metal are manufactured on the surface of the hard alloy; then mixed gas of tetramethylsilane and hydrogen is led in, and the gradient composite coating comprising refractory metal carbide and silicon carbide is prepared by continuously increasing the flow of the tetramethylsilane; and finally methane is led in, the flow of the methane is gradually increased, the flow of the tetramethylsilane is reduced at the same time, and the silicon carbide and diamond gradient hard composite coating is prepared. The coating prepared with the method and a base body are in metallurgical bonding, the coefficients of thermal expansion from the base body to the coating are distributed in a gradient manner, and the method has the characteristics of being small in stress, high in binding intensity and the like. Meanwhile, the overall coating is continuously prepared in one device, the process is simple, and the cost is low.