Continuous growth device for carbon nano-tube

Abstract

The invention discloses a continuous growth device for a carbon nano-tube. The continuous growth device comprises a heating room, a substrate, a catalyst film and a heating device, wherein the heating room is provided with a heating chamber, and a vent hole communicated to the heating chamber is formed in the heating room; the substrate is located inside the heating chamber, the catalyst film is formed on the surface of the substrate, first through holes are formed in the substrate, and the catalyst film comprises second through holes communicated to the first through holes; and the heating device is used for heating the heating chamber. The plurality of holes in the porous substrate are communicated with the plurality of holes in the catalyst film located below the porous substrate, and reactant gas is introduced from the upper part of the porous substrate and can continuously flow into the plurality of holes in the catalyst film through the plurality of holes in the substrate, so that the carbon nano-tube can continuously grow. Preferably, the growth direction of the carbon nano-tube in an improved device is changed to be vertical and downward, therefore, compared with the growth speed of the carbon nano-tube which vertically and upwards grows, the growth speed is increased under the action of gravity, and furthermore, the technical effect of continuous and rapid growth is achieved.

Description

technical field [0001] The present application relates to the field of carbon nanotube preparation, in particular to a continuous growth device for carbon nanotubes. Background technique [0002] At present, the carbon nanotube preparation technology mainly includes arc discharge method, laser ablation method and chemical vapor deposition method. Among them, the chemical vapor deposition method has been widely studied and applied due to its simple process, low cost, controllable nanotubes, large length, and high collection rate. The chemical vapor deposition method mainly uses nanoscale transition metals or their oxides as catalysts to pyrolyze carbon-containing gas sources at relatively low temperatures to prepare carbon nanotubes. [0003] The traditional carbon nanotube growth device includes a quartz tube wound with a heating resistance wire, and a cavity is arranged inside it, and a substrate is placed in the cavity, and a catalyst film of about 10nm is attached on the...

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Problems solved by technology

[0004] In the traditional carbon nanotube growth device, the substrate is airtight. When the reaction gas is passed in, it contacts the catalyst film, and carbon nanotubes can be grown on the surface. As the carbon nanotubes gradually thicken, the catalyst film is gradually Completely submerged, the submerged catalyst film can no longer be in contact with the reaction gas, and cannot function as a catalyst, resulting in the inability of the carbon nanotubes to continue to grow

Generally, when the carbon nanotubes grow to about 1-2mm, they will stop growing. In this case, the carbon nanotubes cannot grow continuously, and the growth efficiency is low.

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