Preparation method of germanium and tin nano material under normal pressure

Abstract

The invention provides a preparation method of a germanium and tin nano material under normal pressure, and belongs to the technical field of semiconductor nano materials. The preparation method comprises the following steps that S1, a silicon wafer is taken, and a metal catalyst is sprayed to the surface of the silicon wafer to achieve treatment; and S2, the silicon wafer treated in the step S1 is flatly placed at one end in a round-bottom porcelain boat, the face, with the metal catalyst sprayed, of the silicon wafer is upward, germanium powder and tin powder with the mass ratio being (20-10):1 are put at the other end in the round-bottom porcelain boat, the round-bottom porcelain boat is placed in a heating cavity of a tube furnace, inert gas is continuously introduced into the end withthe germanium powder and the tin powder with the gas flow being 200 sc.cm, after the temperature of the tube furnace is increased to 800-850 DEG C from the room temperature with the rate of 5 DEG C / min, heat preservation is carried out for 50 min to 110 min, then the temperature is reduced to the room temperature with the rate of 5 DEG C / min, and the germanium and tin nano material is obtained onthe surface of the silicon wafer. By means of the preparation method, the germanium and tin nano material can be rapidly and directly prepared, no waste gas treatment is needed in the whole preparation process, continuous production can be achieved, equipment is simple, and operation is easy.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterials, and in particular relates to a preparation method of germanium-tin nanomaterials under normal pressure. Background technique [0002] Nanoscience and nanotechnology are currently one of the most active fields, and one-dimensional semiconductor nanomaterials have attracted more and more people because of their special electrical and optical size dependence and potential applications in the modern electronics industry. Widely concerned, one-dimensional semiconductor nanomaterials such as nanowires have good application prospects in nanoscale electronic devices, sensors, and connecting wires. Quantum dots are zero-dimensional systems, which are crystal structures with very small sizes. The excellent electrical, optical, and thermal properties of zero-dimensional nanodots have become more and more well-known; nanowires are materials with a thickness in the nanometer range. is a n...

AI Technical Summary

Problems solved by technology

These existing technologies use harsh temperature and pressure conditions, high time costs, and expensive equipment. In particular, it is difficult to remove reagents by chemical synthesis, which affects experimental test results.

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