Preparation method of epitaxially-growing silicon carbide-graphene film

Abstract

The invention relates to the technical field of function materials, in particular to a preparation method of an epitaxially-growing silicon carbide-graphene film. The preparation method of the epitaxially-growing silicon carbide-graphene film comprises steps as follows: (1) preparation of silicon carbide-graphene; (2) epitaxial growth of the silicon carbide-graphene film. Continuous growth of silicon carbide-graphene is realized, so that conventional common steps of hydrogen etching and silicon enrichment reproduction required for growing graphene on silicon carbide are omitted, the phenomena of lattice imperfection and severe reduction of surface silicon enrichment due to hydrogen etching are reduced, and graphene has fewer defects, has about four layers distributed uniformly and has better crystal quality.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a method for preparing an epitaxially grown silicon carbide-graphene film. Background technique [0002] Graphene is a carbon material that is tightly packed into a two-dimensional honeycomb structure by a single layer of carbon atoms. It has excellent mechanical, thermal, optical, electrical and chemical properties due to its unique crystal and electronic band structure. [0003] Such as ultra-high carrier mobility, ultra-large specific surface area, perfect quantum tunneling effect, half-integer quantum Hall effect, etc. In 2004, University of Manchester, UK A. K. Geim and K. S. After Novoselov discovered graphene for the first time, graphene quickly became an international frontier and hotspot in the fields of materials, physics, chemistry, semiconductors, microelectronics, biology, and new energy. Silicon carbide has a layered structure, and its basic consti...

AI Technical Summary

Problems solved by technology

However, improper hydrogen etching will cause lattice defects on the surface of the SiC substrate, and will cause the deposition of silicon compounds, which will excessively reduce the enrichment of silicon on the SiC surface.