The invention discloses a
radio frequency micro-strip structure for the
punching and non-
punching structures of a Ti / Ni / Ag
material system, and a manufacturing method thereof. According to the invention, a
punching structure is composed of a through hole, a W covering layer, a
passivation layer, a front surface Ti / Ni / Ag
metal laminated layer, a
Si substrate and a back
metal laminated layer. A non-punching structure is composed of a
passivation layer, a front surface Ti / Ni / Ag
metal laminated layer, a
Si substrate and a back metal laminated layer. The front surface Ti / Ni / Ag metal laminated layeris provided with patterns. The
Si substrate is made of the high-resistance Si material. According to the invention, the
pollution problem of the front metal on IC process lines when the front metal is Au can be avoided. Meanwhile, the complex problem of the technological process caused by the front metal of Cu can also be avoided. The process compatibility of the manufacturing process and the ICprocess is met. At the same time, Ag, lower in resistivity than Au and Cu, is introduced into the
material system, so that the
radio frequency micro-strip structure is smaller in
transmission loss. Inaddition, the
passivation layer can be added, so that the
electromigration of Ag can be effectively prevented. Finally, during the punching process, the punching structure does not completely penetrate the substrate. The adsorption leakage of the substrate during the subsequent IC process is avoided.