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43results about How to "Strong filling" patented technology

Sweet potato dietary fiber and preparation process thereof

InactiveCN101849657AFull feeling of fullnessReduce heatFood preparationSweet potato - dietaryEconomic benefits
The invention relates to a sweet potato product and a preparation process, in particular to sweet potato dietary fiber and a preparation process thereof, suitable for deeply processing sweet potatoes. In the invention, residual sweet potato dregs left after traditional starch extraction of sweet potato are used as a raw material, and the process comprises the following steps of: selecting and soaking the raw material, primarily cleaning, secondarily cleaning, thirdly cleaning, crushing, elutriating fiber pulp, extruding to dewater, dewatering fiber dregs, baking the fiber dregs, swelling, crushing and sieving. The invention has simple practical production process and low cost, fully utilizes the sweet potato dregs left after starch extraction, reduces waste emission, protects the biological environment, increases the economic incomes of peasants and improves the economic benefits of production enterprises.
Owner:熊兴

Wear-resisting sand pump and casting method thereof

The invention discloses a method for casting a wear-resisting sand pump. In the wear-resisting sand pump, a pump impeller, a material inlet and a pump body are precisely cast by a vacuum lost mold; a shaft is connected with the pump impeller through an outer cone and an inner cone; and the outer cone and the inner cone are rectangular, prismatic or hexagonal and are fastened by screws. The precise casting method comprises the following process steps of: 1, partitioning a foam material to obtain main parts, and bonding by using an adhesion agent to obtain an integrated model of which the shape is consistent with the main shape of a casting; 2, coating a mica-based coating onto the outer surface of a foam model, and drying; 3, putting the dried foam model into a sand box, filling dry sand into the sand box, and performing three-dimensional oscillation compaction; 4, vacuumizing the sand box by using a vacuum system through negative pressure; 5, pouring molten metallic iron from the feeder head of the sand box to replace the position of a foam-molded model so as to obtain a corresponding main part of the sand pump; and 6, condensing. The wear-resisting sand pump has the characteristics of high casting quality, high surface precision, high rigidity, high wear-resisting property, environment friendliness and the like, and is sanitary, safe and reliable.
Owner:梁汉民

Neural unit spherical support and preparation thereof

The invention provides a composition, preparation and an appliance of a neural unit spherical support, wherein a large number of channels are distributed in the neural unit spherical support, and is of a space structure which radiates from the center to the periphery, a center hole is communicated with all channels, the diameter of the neural unit spherical support is 500-2000 Num, the diameter of the channels in the inner portion of the neural unit spherical support is 20-100 Num, and stem cells and vascular endothelial cells are arranged in the channels. The neural unit spherical support can achieve the multiple purposes of effective filling of nerve defect areas and rapid reconfiguration of local neural network and microvessel and the like after being transplanted, thereby achieving the effect that the functions of the nerve defect areas rapidly recover.
Owner:药谷(温州)科技发展有限公司

Semiconductor device forming method

ActiveCN104124137AReduce process difficulty and production costLow costSemiconductor/solid-state device manufacturingEngineeringMask layer
A semiconductor device forming method includes providing a semiconductor substrate, forming a first mask layer on the semiconductor substrate, forming a first groove penetrating the first mask layer for a part of thickness, filling the first groove with a first hard mask layer, forming a second groove penetrating the first hard mask layer for the thickness of the first hard mask layer; utilizing the first hard mask layer as a mask to etch the first mask layer and the semiconductor substrate till a through hole or a groove is formed in the semiconductor substrate. By means of the semiconductor device forming method, only one etching process is required in formation of the through hole or the groove through a double graph technology, double graph forming process difficulty and manufacture cost are reduced, and the semiconductor device forming cost is further reduced.
Owner:SEMICON MFG INT (SHANGHAI) CORP

UV makeup method and device

The invention discloses a UV makeup method of large-size unit holographic figures and of an optical structure part for ultrafine processing having a deep trough structure and a device. According to the method, a unit figure mother set is pasted on a glass plane, surface tension of one face of a PET film is increased, a photosensitive negative film is pasted on the other face of the PET film, the PET film is placed on an upper surface of the unit figure mother set, one end of the PET film is pasted on the glass plane, spliced long plaids of the photosensitive negative film are pasted with a mask plate for exposure, a light transmission area on the mask plate and the long plaid on the photosensitive negative film are aligned, the PET film is turned over to expose the unit figure mother set, one or more rows of UV glue are dropped on one end of the unit figure mother set, the UV glue is distributed on a surface of the glue solution, the UV glue in the light transmission area on the mask plate is solidified, a pattern on the unit figure mother set is transferred to the PET film and is attached to a surface of the PET film to accomplish splicing of the pattern. The UV makeup method can realize makeup with high fidelity.
Owner:HUBEI XINGLONG PACKAGING MATERIAL

High-molecular environment-friendly elastic sound insulation material and preparation method thereof

The invention discloses a high-molecular environment-friendly elastic sound insulation material. The material comprises the following components in parts by weight: 10-20 parts of an allyl elastomer,5-15 parts of a styrene elastomer, 40-120 parts of a filler, 1-15 parts of a plasticizer and 2-10 parts of an assistant. The high-molecular environment-friendly elastic sound insulation material has the advantages of high density, high strength, high flexibility, high sound insulation performance, high environment friendliness, excellent high and low temperature resistance and the like. The invention further discloses a preparation method of the high-molecular environment-friendly elastic sound insulation material. The method comprises the following steps: premixing the styrene elastomer and the plasticizer in a dispersion machine, adding the obtained mixture and the allyl elastomer into an internal mixer, carrying out melting and uniform mixing, adding other components, carrying out melting, conveying the plasticized materials into a single-screw extruder, and carrying out extrusion, squeezing, stretching and shaping to obtain the high-molecular environment-friendly elastic sound insulation material. The preparation method is simple to operate, low in cost and suitable for industrial promotion.
Owner:ZHUZHOU TIMES NEW MATERIALS TECH

Through silicon via forming method and alignment structure of semiconductor device

A through silicon via forming method and an alignment structure of a semiconductor device are provided. The semiconductor device comprises a semiconductor substrate and an interlayer dielectric layer disposed on the semiconductor substrate. The interlayer dielectric layer is provided with a groove. The alignment structure of the semiconductor device comprises a metal layer disposed on the inner surface of the groove, and an isolation layer disposed in the groove and on the surface of the metal layer, wherein the upper surface of the isolation layer is lower than the upper surface of the interlayer dielectric layer. As the upper surface of the isolation layer is lower than the upper surface of the interlayer dielectric layer, the alignment structure of the semiconductor device can be detected quickly and accurately.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Special film preservative for cooked salted duck egg and film coating process

The invention relates to a special film preservative for a cooked salted duck egg. Film preservatives with barrier performance, antibacterial properties and mechanical properties are prepared with natural degradable polyvinyl alcohol and chitosan as main base materials and stearic acid, glutaraldehyde, whey protein concentrate, nano-TiO2, nano-SiO2, Kelinggu, a solvent and other materials or processing aids as auxiliary materials; and based on the data of mechanical properties, barrier performance and antibacterial properties of films prepared from different formulas, the special film preservative for the cooked salted duck egg is obtained. The special film preservative has the following beneficial effects: the special film preservative can prevent exchange between substances in and out of the shell of the cooked salted duck egg and invasion by a variety of harmful microbes during storage of the cooked salted duck egg, exerts a certain bacteriostatic effect, reduces loss of dry matters and moisture, allows the cooked salted duck egg to maintain good storage quality and prolongs the high-quality shelf life of the cooked salted duck egg; moreover, the special film preservative replaces conventional plastic composite boiling bags in packaging, so the usage amount of plastics is lowered down, environmental pollution is reduced, production cost is decreased, and benefits are increased.
Owner:高邮市红太阳食品有限公司

Manufacturing process of self-aligned silicide barrier layer

This invention discloses one process method for automatic self-calibrating silicon block layer, which comprises the following steps: firstly growing first layer of silica dioxide by use of CVD method; then using HDP method to grow second layer of silica dioxide on the first layer of silica dioxide layer. The invention can solve the stuff ability problem between calibration block layer and multiple transistor lines to overcome the whole phenomenon to lower leakage current.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Pipe semi-solid air pressure contact forming method

The invention relates to a pipe semi-solid air pressure contact forming method, and relates to a metal pipe internal bulging process method. The invention aims to solve problems that due to the fact that the existing pipe machining method requires that yield strength and thickness of the pipe can not be too high, and thus the existing pipe machining method can not be applied to materials with poorplasticity; the existing pipe machining method is not suitable for forming parts with complex shapes, and forming equipment is large in tonnage. The method comprises the step 1 of placing the pipe ina mold cavity of a forming mold, closing the forming mold and sealing the pipe; the step 2 of heating the pipe to a semi-solid temperature and preserving heat; the step 3 of continuously feeding airinto the inner of the pipe until the outer wall of the pipe is attached to the mold cavity of the forming mold; the step 4 of stopping the heating of the pipe and discharging the air; and step 5 of opening the forming mold, taking out the formed pipe from the mold cavity, and namely the pipe semi-solid air pressure contact forming method is completed. The invention is used for the pipe semi-solidair pressure contact forming.
Owner:HARBIN INST OF TECH

Through-silicon via and forming method thereof

Provided are a through-silicon via and a forming method thereof. The forming method of the through-silicon via comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate has a through via, and the surface of the through via is coated with an insulating layer; and the through via is filled with silicon germanium. By making use of good filling capacity of silicon germanium and filling the through via with silicon germanium, a formed conductive column has no hole inside. Therefore, a through-silicon via formed by the method has stable performance and high reliability.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

Rustproof air nail hole sealing rubber and preparation method thereof

The invention discloses rustproof air nail hole sealing rubber and a preparation method thereof and belongs to the technical field of metal rust prevention. According to key points of the technical scheme, the rustproof air nail hole sealing rubber is prepared from the following raw materials in parts by weight: 20-40 parts of a solvent, 5-20 parts of a rust remover, 20-40 parts of resin and 1-5 parts of a rheology modifier. The invention also discloses a preparation method of the rustproof air nail hole sealing rubber. The preparation method of the rustproof air nail hole sealing rubber has the advantages that a small amount of environment-friendly and non-toxic solvent and modified polymer resin are used as main raw materials, and the product has strong filling performance on air nail holes and good bonding performance with wood and air nails, so that the rustproof air nail hole sealing rubber hardly falls off or cracks after filling; and the used modified polymer resin has strong weather resistance and water resistance, so that filling materials in the air nail holes hardly expand with heat and contract with cold to generate deformation after repairing and are moistureproof.
Owner:HENAN NORMAL UNIV

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprises the following steps: providing a semiconductor substrate on which a pad oxide layer is formed; forming a shallow trench isolation structure in the semiconductor substrate, wherein the top of the shallow trench isolation structure is higher than the surface of the semiconductor substrate; and simultaneously removing the pad oxide layer and the part, higher than the surface of the semiconductor substrate, of the shallow trench isolation structure by an anisotropic etching process, wherein etching gases adopted by the anisotropic etching process contain NF3 and also contain at least one of NH3 and H2. The anisotropic etching process adopting NF3 and NH3 (H2) can reduce the roughness of the surface after etching. The trench isolation structure has a flat top, and no sharp bulge is produced. Thus, sharp bulges are prevented from being produced on the surfaces of structures subsequently formed on the shallow trench isolation structure, adverse consequences such as an uneven electric field or tip discharge are prevented, and the performance of the semiconductor device is improved eventually.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Casein calcium phosphorus microsphere collagen filling agent, preparation method of filling agent and preparation method of casein calcium phosphorus microspheres

The invention provides a casein calcium phosphorus microsphere collagen filling agent, a preparation method of the filling agent and a preparation method of casein calcium phosphorus microspheres. Thecasein calcium phosphorus microspheres as a novel material are adopted, so that the effectiveness and the maintaining time of a traditional collagen filling agent are improved and prolonged, the biological safety is high, and expression of collagen can be stimulated; and the casein calcium phosphorus microspheres have extremely high application prospect and value. Terminal peptide-free animal collagen or genetic recombinant human collagen is used, the material immunogenicity is low, and the material purchasing / preparing cost is low, so that the collagen is suitable for large-scale industrialproduction. Auxiliary components such as glycerin or small molecular hyaluronic acid are added into the filling agent, so that the rheological property of the filling agent can be improved, and the filling agent has stronger filling performance and is easier to inject. The process provided by the invention has the advantages of wide application prospect, low cost, no harmful wastes, industrial production, high practicability and the like.
Owner:SHANGHAI MOYANG BIOTECHNOLOGY CO LTD

Method for forming finned field effect transistor

A method for forming a finned field effect transistor comprises the following steps of forming a cap layer on a semiconductor substrate; etching the cap layer and the semiconductor substrate until grooves are formed in the semiconductor substrate; forming fins on the semiconductor substrate and between the adjacent grooves; fully filling the grooves and covering the rest portion of the cap layer by using isolation material layers; flattening the isolation material layers until the isolation material layers are exposed out of the upper surface of the cap layer; etching the flattened isolation material layers for the first time until the upper surfaces of the rest isolation material layers are level and parallel to one another and are perpendicularly connected with a side surface of the cap layer; and etching the rest isolation material layers for the second time by using a SiConi etching method until isolation layers are formed. The fins of the finned field effect transistor formed by the method have good outlines, and the upper surfaces of the isolation layers are level and parallel to one another, so that the performance of the finned field effect transistor is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Acid copper plating process suitable for carrier plate electroplating

PendingCN114457396AStable performanceExcellent filling of blind viasJewelleryAnalytical controlCopper plating
The invention relates to the technical field of copper plating, and particularly discloses an acidic copper plating process suitable for carrier plate electroplating, which comprises the step of electroplating a carrier plate through an electroplating solution, and is characterized in that the electroplating solution comprises the following components: 200-250g / L of copper sulfate, 30-50g / L of electroplating-grade sulfuric acid, 40-80ppm of analytically pure hydrochloric acid, 25-40ml / L of a copper plating leveling agent, 0.5-1.3 ml / L of a copper plating brightener and 5-15ml / L of a copper plating wetting agent, the device is designed for HDI products filled with blind holes, is suitable for insoluble anodes and soluble anodes, can show excellent filling capacity in vertical continuous electroplating or a traditional portal frame type electroplating line, is stable in electroplating liquid performance, and has an excellent blind hole filling effect; the electroplated copper particles are bright, fine in crystal, good in ductility and excellent in uniformity; a direct-current electroplating method can be used for production; maintenance is easy; a Hou's cell and a CVS can be used for analysis and control.
Owner:江西博泉化学有限公司

Halogen-free sheet-like soft magnetic material adhesive, preparation method and halogen-free soft magnetic sheet

InactiveCN103409086BHalogen freeSolve the problem of low magnetic performanceNon-macromolecular adhesive additivesPermanent magnetsElastomerPolymer science
The invention provides a bond made from a halogen-free sheet soft magnetic material, a preparation method thereof and a halogen-free soft magnetic sheet. The bond comprises the following components in percentage by weight: 5-30wt% of polyethylene, 70-95wt% of polyolefin copolymers as well as 0.1-2.0wt% of crosslinking agent and 0.1-1.0wt% of antioxygen. The preparation method of the bond comprises the following steps of: 1) adding the components in proportion into a mixer and uniformly mixing; 2) in an intermeshing co-rotating twin screw set, extruding an infused bar by virtue of a melt extrusion reaction grafting technology; 3) cooling with cooling water at a normal temperature, and then slicing and drying to obtain polyolefin elastomer bond particles. The halogen-free soft magnetic sheet provided by the invention is prepared through the following steps: physically mixing 5-12wt% of the polyolefin elastomer bond, 84-92wt% of neodymium iron boron magnetic powder or ferrite magnetic powder, 0.2-3wt% of non-orthophthalic plasticizer and 0.1-3wt% of titanate coupler; banburying, crushing, screening, rolling, polishing by virtue of UV (Ultraviolet), magnetizing and tailoring to prepare the environmentally-friendly halogen-free soft magnetic sheet which conforms to the requirements on environmentally-friendly ROHs (Restriction of the use of certain Hazardous Substances) regulations.
Owner:HUBEI UNIV OF TECH

Preservative and film coating process for cooked salted duck eggs

The invention relates to a film-coated fresh-keeping agent specially used for boiled salted duck eggs. The present invention uses natural degradable polyvinyl alcohol and chitosan as the main substrate, supplemented with stearic acid, glutaraldehyde, whey protein concentrate, nano-TiO2, nano-SiO2, Kelingu, solvents and other materials or Processing aids to obtain coating film preservatives with barrier properties, antibacterial properties and mechanical properties. Through the data of mechanical properties, barrier properties and antibacterial properties of coating films obtained from different formulations, finally obtain special coating film preservation for boiled salted duck eggs agent, the beneficial effects of the present invention are: it can prevent the exchange of materials inside and outside the eggshell and the infection of various harmful microorganisms during the storage process of boiled salted duck eggs, and has a certain antibacterial effect, reducing the loss of dry matter and water, making Cooked salted duck eggs maintain good storage quality, extend the high-quality shelf life, and replace the existing plastic composite retort bag packaging, which can not only reduce the amount of plastic used, reduce environmental pollution, but also reduce production costs and increase profits.
Owner:高邮市红太阳食品有限公司

Raise-dust-free chalk having high filling capacity and used for magnetic blackboard

The invention discloses raise-dust-free chalk having high filling capacity and used for a magnetic blackboard. The chalk comprises the following raw materials: gypsum, modified talc powder, white carbon black, natural beeswax, glycerin, epoxy silkworm chrysalis oleic acid butyl ester, sodium dodecyl phosphate, sodium polyacrylate and a pigment, wherein the modified talc powder is prepared with the following process: talc powder, diatomaceous earth, iron(III) chloride and ferrous sulfate are placed in water and stirred uniformly, a sodium bicarbonate solution is added dropwise, the mixture is stirred, filtered and dried, and a first pre-prepared material is obtained; cyclodextrin and trimethoxyoctylsilane are stirred uniformly, an ethanol solution is added and mixed uniformly, citric acid is added to regulate the pH value of the system, and a second pre-prepared material is obtained; the second pre-prepared material is sprayed to the first pre-prepared material, the mixture is stirred and dried, and the modified talc powder is obtained. The chalk writes smooth and clear on dry and wet blackboards and does not slip, falling dust in a writing process can be adsorbed on the surface of the magnetic blackboard, raise dust is avoided, writing is erased with no mark residue, the cost is low, and the chalk is durable.
Owner:崇夕山

Polymer blue dye and application of polymer blue dye in acid copper plating process

The invention discloses a polymer blue dye, which is hydrosulfate of poly(2-methyl-3-amino-5-phenyi-7-(N,N-diethyiamino)phenazine in a structural formula (1), wherein n is between 8 and 12; the invention also discloses application of the polymer blue dye in an acid copper plating process, greatly improves the efficiency of the copper plating process, and shortens the copper plating time which is 1 / 3 to 1 / 2 of the conventional process time; the filling performance of an acid copper plating layer is extremely strong, so the unfavorable prerequisite condition brought by national plating substrates is avoided; and the appearance of the acid copper plating layer is complete and smooth, and dents of the substrates are effectively filled. The covering power is greatly improved, and the depth requirement beyond the conventional process can be met.
Owner:SHANGHAI DEJUN SURFACTECH
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