The invention discloses a ZnO nanometer array
ultraviolet detector and a manufacturing method of the ZnO nanometer array
ultraviolet detector. The structure of the
ultraviolet detector is of a
metal-
semiconductor-
metal contact type. The ultraviolet detector sequentially comprises a substrate of ITO conductive glass or FTO conductive glass, a ZnO film, an
electrode at the other end and a ZnO nanometer array from bottom to top. The substrate is an
electrode at one end; the ZnO film covers the substrate, the
electrode at the other end is located in the middle position of the ZnO film, and the ZnO nanometer array is arranged on the periphery of the electrode at the other end; the area of the electrode at the other end is 10%-12% of the total area of the substrate. The manufacturing method comprises the following steps: firstly, performing
sputtering on the substrate through magnetic control to produce a layer of ZnO film, secondly, installing electrodes on the ZnO film and leading out one end of a wire, thirdly, covering the electrodes with PDMS protection
layers, fourthly, developing the ZnO nanometer array through a hydrothermal method, finally, scraping off part of ZnO at the edge on one side of a sample so that the substrate of the conductive glass can be exposed, and leading out the other end of the wire. Thus, the ultraviolet detector is obtained. The ultraviolet detector and the manufacturing method of the ultraviolet detector have the advantages of being simple in manufacturing process, easy to operate, low in cost, high in device sensitivity, stable in performance and the like.