41results about How to "Promote nucleation growth" patented technology

The invention provides high-speed high-density and lower power consumption phase-change memory unit and a preparation method thereof. According to the manufacture method, firstly a transition material layer with an accommodating space is prepared on the structural surface of a formed first electrode, wherein the accommodating space corresponds to the first electrode; a phase-change material layer is prepared on the structure of the formed transition material layer and ensured to be positioned in the accommodating space; then a second electrode material layer is prepared on the structural surface of the prepared phase-change material layer, so as to prepare the phase-change memory unit, wherein the transition material layer ensures that the phase-change material layer is isolated from the first electrode; and the second electrode material layer is electrically communicated with the phase-change material layer.

The invention belongs to the field of polycrystal casting units and particularly discloses a drainage device capable of changing the flow direction of carrier gas. The drainage device comprises a gasinlet part, a shunt part and a drainage part which are connected fixedly in sequence, wherein a gas inlet hole allowing the carrier gas to flow in is formed in the gas inlet part; a shunt cavity is formed in the shunt part; the drainage part comprises at least one drainage gas channel for changing the flow direction of the carrier gas; the gas inlet hole is communicated with the shunt cavity; a gas inlet of each drainage gas channel is communicated with the shunt cavity, and gas outlets are distributed in the same angular direction circumferentially. The drainage device is provided with a viewfield leading into an ingot furnace and drives the carrier gas to dispersedly blow different areas of the surface of liquid silicon, the contact are of the carrier gas and the surface of the liquid silicon is increased, and local area supercooling caused by the carrier gas and impurity formation promoted by the carrier gas are reduced; the carrier gas drives the liquid silicon to produce a rotating flow field, under the combined action of a natural convection flow field and the rotating flow field, impurity volatilization is promoted, local area enrichment of impurities in the liquid siliconis reduced, and radial electrical resistivity of crystals is distributed more uniformly.

The invention discloses a method for preparing a zeolite molecular sieve through quick crystallization of dry glue, and relates to the field of molecular sieve solid phase synthesis. The method specifically comprises the following steps: adding an aluminum source and a fluoride into a silicon-aluminum type molecular sieve mother solution for crystallizing to obtain a silicon-aluminum type molecular sieve guiding agent; adding an alkali source, a silicon source, a template agent R and deionized water into the silicon-aluminum type molecular sieve guiding agent, uniformly carrying out mixing, and then carrying out drying to obtain dry glue powder; and crystallizing the dry glue powder in a steam atmosphere in a continuous crystallization kettle to obtain the zeolite molecular sieve, whereinthe crystallization time is 2-10 hours. The guiding agent disclosed by the invention is obtained by secondary crystallization, and is high in activity and strong in guiding action, so that the usage amount of the template agent can be reduced, crystallinity can be improved, generation of hybrid crystal phases formed by solid-phase synthesis is avoided, and the crystallization period is shortened.The continuous crystallization kettle can be used for continuous production without need of cooling and pressure relief, so that the required crystallization time is short, and efficiency and yield are high. The prepared zeolite molecular sieve is good in stability, high in crystallinity and high in silicon-aluminum ratio.

The invention discloses a polycrystalline silicon ingot furnace with a diversion device. The ingot furnace comprises a heat insulation cage, a gas delivery pipe and a diversion device, wherein a plurality of diversion air ducts are formed in the diversion device, and are used for dividing input carrier gas into a plurality of outgoing carrier gas flows; the carrier gas flows inject different regions on the surface of liquid silicon in a dispersed and inclined manner, thus the contact area between carrier gas and the surface of liquid silicon is effectively increased, heat brought away by the carrier gas flows from the unit area is less, and temperature reduction of the liquid silicon in the regions can be reduced, condensate depression can be reduced, and impurity nucleation caused by the carrier gas and impurity formation can be reduced. The outgoing carrier gas flows can generate carrier gas stress on the liquid silicon, and drive the liquid silicon to flow and form a rotating flow field making peripheral flow; the rotating flow field is beneficial to transportation and uniform distribution of impurities in the liquid silicon; and an observation window in the furnace top has a view field leading to the inside of the ingot furnace through the diversion device, the state in the furnace can be observed through the observation window, a crystal measurement bar can be inserted into the furnace, an infrared detector can be used for detecting the state of a silicon material in the furnace, and the automatic crystal growing process can be carried out smoothly.

The invention discloses a method for heterogeneously growing AlN on a SiC seed crystal by using a physical vapor transport method. A crucible structure including a vapor-saturated microcavity is designed, and the interior of the microcavity can be evacuated and inflated; The vapor-saturated microcavity suppresses the forward decomposition and sublimation of SiC in the initial stage and realizes the growth of AlN. The lateral sublimation of SiC in the initial stage is suppressed by the adhesive covering with weak pores, and the AlN polycrystalline spacer is gradually back-sublimated and deposited on the surface of SiC; After the sublimation of the polycrystalline spacer disappears, the Al atoms obtained by the sublimation of the AlN source powder are transported to the growth surface; The AlN binder sublimates away from the crucible area, so that the SiC is sublimated and decomposed laterally, and the SiC seed crystal layer gradually disappears, thereby obtaining an AlN seed crystal without SiC. By adopting the method of the invention, crack-free AlN seed crystals with high single crystal rate and low impurity content can be obtained.

The invention discloses a flow guiding device for a polycrystal ingot-casting furnace. The flow guiding device comprises a matching and connecting drum and a flow guiding drum which are axially connected, wherein the matching and connecting drum comprises a hollow matching and connecting drum part and a gas feeding platform part, the drum wall of the matching and connecting drum part is internally provided with a first buffering cavity which is concentric with the matching and connecting drum part and is provided with an opening at the lower end; a gas feeding hole is formed in the gas feeding platform part and is communicated with the first buffering cavity; the drum wall of the upper end part of the flow guiding drum is internally provided with a second buffering cavity which is provided with an opening at the upper end surface and corresponds to the first buffering cavity; the drum wall of the flow guiding drum is internally provided with at least one flow-guiding gas channel which extends downwards from the lower end surface of the second buffering cavity along a cylindrical spiral line, and an outlet of the flow-guiding gas channel is positioned at the lower end part of the flow guiding drum. The flow guiding device disclosed by the invention has a visual field leading into the ingot-casting furnace, and by the flow guiding device, carrier gas is sprayed to liquid silicon in a dispersed manner, so that the contact surface of the carrier gas and the liquid silicon is enlarged, local supercooling caused by the carrier gas and impurity formation enhanced by the carrier gas are reduced; and simultaneously, a rotary flow field is generated in the process that the carrier gas drives the liquid silicon, so that the impurity volatilization is promoted.