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Perovskite thin film and preparation method thereof, perovskite solar cell, optoelectronic device

A solar cell and perovskite technology, applied in the direction of electrical solid devices, electrical components, semiconductor devices, etc., can solve the problems of poor film forming quality and low performance, achieve high crystallinity, and promote the effect of nucleation and growth

Active Publication Date: 2022-05-03
佛山仙湖实验室
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the film quality of the perovskite film prepared by the air knife method and the film prepared by the anti-solvent method is poor, resulting in lower performance.

Method used

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  • Perovskite thin film and preparation method thereof, perovskite solar cell, optoelectronic device
  • Perovskite thin film and preparation method thereof, perovskite solar cell, optoelectronic device
  • Perovskite thin film and preparation method thereof, perovskite solar cell, optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Embodiment 1 is the preparation steps of the perovskite film and its corresponding perovskite solar cell.

[0051] The preparation of perovskite thin films includes the following steps:

[0052] (1) Weigh 39mg CsI (cesium iodide), 146.17mg FAI (ForMaMidiniuM Iodide, formamidine hydroiodide), 357.28mg PbI 2 (lead iodide), 82.58mg PbBr 2 (lead bromide) and 20.4 mg MACl (methylammonium chloride) and dissolved in 1 mL of DMF (N,N-dimethylformamide) for the configuration of 1.0 mmol / mL of Cs 0.15 FA 0.85 PB 2.55 Br 0.45 Perovskite precursor liquid, the prepared perovskite precursor liquid is slit-coated to form a perovskite precursor liquid film on the substrate.

[0053] (2) At room temperature (25°C), 0.2MPa high-purity nitrogen gas is bubbled into the toluene solvent to form a mixed gas (or aerosol) of high-pressure nitrogen carrying toluene solvent molecules, and enters the air knife to form an air curtain. The angle between the outlet direction of the air knife an...

Embodiment 2

[0068] Embodiment 2 is the preparation steps of the perovskite film and its corresponding perovskite solar cell.

[0069] The difference between Example 2 and Example 1 is that the method of forming a mixed gas in the preparation step (2) of the perovskite thin film and the preparation step (4) of the perovskite solar cell in Example 2 is 0.2MPa high-purity nitrogen and 0.1 The MPa toluene solvent vapor is mixed and formed through the three-way valve. All the other processes are the same as in Example 1.

[0070] The preparation of perovskite thin films includes the following steps:

[0071] (1) Weigh 39mg CsI (cesium iodide), 146.17mg FAI (ForMaMidiniuM Iodide, formamidine hydroiodide), 357.28mg PbI 2 (lead iodide), 82.58mg PbBr 2 (lead bromide) and 20.4 mg MACl (methylammonium chloride) and dissolved in 1 mL of DMF (N,N-dimethylformamide) for the configuration of 1.0 mmol / mL of Cs 0.15 FA 0.85 PB 2.55 Br 0.45 Perovskite precursor liquid, the prepared perovskite precur...

Embodiment 3

[0086] Embodiment 3 is the preparation steps of the perovskite film and its corresponding perovskite solar cell.

[0087] The difference between Example 3 and Example 2 is that the vapor temperature of the 0.1MPa toluene solvent before mixing in the preparation step (2) of the perovskite thin film in Example 3 and the preparation step (4) of the perovskite solar cell is 110°C, And the temperature of the mixed gas at the air outlet of the air knife is 60°C. All the other processes are the same as in Example 2.

[0088] The preparation of perovskite thin films includes the following steps:

[0089] (1) Weigh 39mg CsI (cesium iodide), 146.17mg FAI (ForMaMidiniuM Iodide, formamidine hydroiodide), 357.28mg PbI 2 (lead iodide), 82.58mg PbBr 2 (lead bromide) and 20.4 mg MACl (methylammonium chloride) and dissolved in 1 mL of DMF (N,N-dimethylformamide) for the configuration of 1.0 mmol / mL of Cs 0.15 FA 0.85 PB 2.55 Br 0.45 Perovskite precursor liquid, the prepared perovskite p...

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Abstract

The invention relates to the technical field of preparing photoelectric materials, in particular to a perovskite thin film and a preparation method thereof, a perovskite solar cell and a photoelectric device. The preparation method of the perovskite thin film includes the following steps: the perovskite precursor liquid forms a perovskite precursor liquid film on the substrate, the perovskite precursor liquid contains a first solvent and a perovskite precursor material; the mixed gas or The aerosol is fed into the air knife and dried to obtain a perovskite dry film, the mixed gas includes the vapor of the second solvent, the aerosol includes the second solvent and the vapor of the second solvent, and the second solvent and the first solvent are miscible; The perovskite dry film is annealed to prepare the perovskite film. Combining the anti-solvent method and the air knife blowing method can promote the nucleation and growth of perovskite materials, thereby preparing perovskite films with uniform crystallization, no holes, and high quality.

Description

technical field [0001] The invention relates to the technical field of preparing photoelectric materials, in particular to a perovskite thin film and a preparation method thereof, a perovskite solar cell and a photoelectric device. Background technique [0002] In recent years, research on metal halide hybrid perovskite solar cells has become popular all over the world. At present, the highest cell efficiency certified by authoritative organizations has exceeded 25%. The efficiency of solar cells is quite high, and they also have excellent application prospects in applications such as light-emitting diodes and photodetectors. [0003] The laboratory preparation of perovskite thin films in the scientific research stage is usually prepared by the spin coating method, but the spin coating method can generally only be used to prepare small-area perovskite thin films at the laboratory level. At present, in the preparation process of large-area perovskite thin films, the solvent ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/15H10K71/12H10K85/30H10K30/30Y02E10/549
Inventor 徐觅黄福志程一兵
Owner 佛山仙湖实验室
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