High-speed, high-density and lower power consumption phase-change memory unit and preparation method thereof

Abstract

The invention provides high-speed high-density and lower power consumption phase-change memory unit and a preparation method thereof. According to the manufacture method, firstly a transition material layer with an accommodating space is prepared on the structural surface of a formed first electrode, wherein the accommodating space corresponds to the first electrode; a phase-change material layer is prepared on the structure of the formed transition material layer and ensured to be positioned in the accommodating space; then a second electrode material layer is prepared on the structural surface of the prepared phase-change material layer, so as to prepare the phase-change memory unit, wherein the transition material layer ensures that the phase-change material layer is isolated from the first electrode; and the second electrode material layer is electrically communicated with the phase-change material layer.

Description

technical field [0001] The invention relates to the field of phase-change memory, in particular to a high-speed, high-density, low-power phase-change memory unit and a preparation method. Background technique [0002] In the semiconductor market, memory occupies a very important position. At present, the types of memory mainly include: static memory (SRAM), dynamic memory (DRAM), disk, flash memory (Flash), ferroelectric memory, etc. Other memories, such as phase-change memory (PCRAM) and resistive random access memory (RRAM), have also received extensive attention as candidates for next-generation memories. The industry believes that FLASH will encounter size reduction limitations in the near future. Among the many new storage technologies that may replace existing storage technologies and become commercialized, PCRAM is considered to be one of the best solutions for next-generation non-volatile storage technologies. First, it has the advantages of small memory cell size, ...

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Problems solved by technology

On the other hand, traditional T-structure devices have limited operating speed, making it difficult to perform high-speed operation

Since the phase change material will diffuse to the bottom electrode and the surrounding during the operation of the phase change memory, this will cause the material composition of the device unit to segregate after a certain number of erasing and writing operations, which will affect the reliability of the device operation, resulting in cycle failure. Reduced frequency

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