The invention provides an
SOI CMOS technology-based
radiation detector and a preparation method thereof. A Si film area, a source
electrode or drain
electrode injection area and a medium isolation area are arranged on an
oxygen-buried oxidation layer in sequence from inside to outside, a
body area injection area is embedded in the Si film area, and
ohmic contact electrodes are arranged on the source
electrode or drain electrode injection area and the
body area injection area; and a
Si substrate is arranged under the
oxygen-buried oxidation layer, a groove with the bottom facing upwards is arranged on the
Si substrate, a back gate electrode is arranged on the surface of the groove, and a back through hole
metal filling area connected with the back gate electrode is arranged inside the
oxygen-buried oxidation layer. The device has
high radiation sensitivity, high induced charge capacity, low working
gate voltage, and high reliability. The medium isolation area grows on a front side of a substrate; the source electrode or drain electrode injection area and the
body area injection area are obtained by injecting ions; the
ohmic contact electrodes are obtained by
sputter deposition; and a detection window area and the back through hole area are etched on the reverse side of the substrate and are filled with
metal. The method is simple in technology, good in
repeatability, and low in cost, and is easy to be integrated with the
manufacturing technology of an existing large scale
integrated circuit.