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X-ray detector based on perovskite material and preparation method thereof

A perovskite material and X-ray technology, applied in the field of perovskite-based X-ray detectors and its preparation, can solve the problems of small atomic number of materials, insufficient detection dose, complex preparation process, etc., and achieve atomic number Large size, simple structure, and short preparation process

Active Publication Date: 2020-01-10
SHAANXI NORMAL UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still problems with these materials, such as complex preparation process, high price, low atomic number of materials, low sensitivity and low detection dose, etc.

Method used

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  • X-ray detector based on perovskite material and preparation method thereof
  • X-ray detector based on perovskite material and preparation method thereof
  • X-ray detector based on perovskite material and preparation method thereof

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preparation example Construction

[0029] The preparation method of the X-ray detector based on the perovskite material of the present invention, specifically, comprises the following steps:

[0030] Step 1, weigh AI and BI according to the molar ratio of 3:2 3 The raw material is dissolved in an organic solvent to obtain a mixed precursor liquid with a concentration of 0.2-1.5 mol / L; among them, AI is CsI, CH 3 NH 3 I, RbI; BI 3 for BiI 3 , SbI 3 ; The organic solvent is at least one of γ-butyrolactone, N, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone;

[0031] Step 2, put the mixed precursor liquid into a crystallization dish, seal it, heat it to 60-100°C, and keep it for 2-48 hours to make it reach a sufficient dissolution equilibrium, then take the supernatant to obtain a fully saturated solution of the precursor;

[0032] Step 3, place the fully saturated solution of the precursor at an ambient temperature 2-5°C lower than the heating termination temperature in step 2, and gradual...

Embodiment 1

[0040] Step 1, weigh 9.36gCsI and 14.16gBiI according to the molar ratio of 3:2 3 The raw materials were dissolved in 30 mL of N,N-dimethylformamide solvent to obtain a mixed precursor liquid with a concentration of 0.4 mol / L.

[0041] Step 2, put the mixed precursor liquid into a crystallization dish, seal it, heat it to 70°C, and keep it for 12 hours to make it reach a sufficient dissolution equilibrium, then take the supernatant to obtain a fully saturated solution of the precursor;

[0042] Step 3, put the fully saturated solution of the precursor in an oven at 65°C, and gradually raise the temperature at a rate of 2°C / day until the crystals are precipitated, and then continue to increase the temperature by 8°C at a rate of 2°C / day to obtain a larger size Cs 3 Bi 2 I 9 Perovskite single crystal;

[0043] Step 4, taking out the crystal and drying it;

[0044] Step 5, evaporating Au electrodes on the surface of the crystal.

Embodiment 2

[0046] Step 1, weigh 5.72g CH according to the molar ratio 3:2 3 NH 3 I and 14.16g BiI 3 The raw materials were dissolved in 30 mL of γ-butyrolactone solvent to obtain a mixed precursor liquid with a concentration of 0.4 mol / L.

[0047] Step 2, put the mixed precursor liquid into a crystallization dish, seal it, heat it to 80°C, and keep it for 24 hours to make it reach a sufficient dissolution equilibrium, then take the supernatant to obtain a fully saturated solution of the precursor;

[0048] Step 3, put the fully saturated solution of the precursor in an oven at 75°C, and gradually raise the temperature at a rate of 2°C / day until the crystals are precipitated, and then continue to increase the temperature by 8°C at a rate of 2°C / day to obtain a larger size CH 3 NH 3 Bi 2 I 9 Perovskite single crystal;

[0049] Step 4, taking out the crystal and drying it;

[0050] Step 5, evaporating Au electrodes on the surface of the crystal.

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Abstract

The invention discloses an X-ray detector based on a perovskite material and a preparation method of the X-ray detector. The method comprises the steps: 1, weighing AI and BI3 raw materials accordingto a molar ratio of 3: 2, and dissolving the AI and BI3 raw materials in an organic solvent to obtain a mixed precursor solution, wherein AI is CsI, CH3NH3I or RbI, and BI3 is BiI3 or SbI3; 2, sealingthe mixed precursor solution, heating the solution to 60-100 DEG C and maintaining the temperature for 2-48 hours to achieve full dissolution equilibrium, and then, taking supernate to obtain a completely saturated solution of the precursor; 3, placing the completely saturated solution of the precursor at an environment temperature lower than the heating termination temperature in the step 2, then, gradually carrying out heating at a speed of less than 5 DEG C / day until crystallization, and stopping heating until the temperature is continuously increased by at most 10 DEG C to obtain an A3B2I9 perovskite single crystal; 4, taking out the single crystal and carrying out drying; and 5, evaporating an interdigital metal electrode on the surface of the single crystal.

Description

technical field [0001] The invention relates to the field of semiconductor X-ray detectors, in particular to an X-ray detector based on a perovskite material and a preparation method thereof. Background technique [0002] Semiconductor radiation detectors have been widely used in national defense, military, medical and health, public safety, high-end industry, scientific research and other industries due to their high energy resolution, high detection efficiency, and large stopping power. Among them, the semiconductor detector used for radioactive ray detection directly converts the absorbed ray energy into electron-hole pairs, which drift under the action of an external electric field to output signals. In practical applications, different semiconductors are selected as the light-absorbing layer material of the detector according to different applications. Currently in the medical field, digital medical imaging has become an important part of current medical diagnosis and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/115H01L31/032H01L31/18
CPCH01L31/032H01L31/115H01L31/18Y02P70/50
Inventor 刘生忠张云霞刘渝城
Owner SHAANXI NORMAL UNIV
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