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44results about How to "Good photoelectric response" patented technology
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Method for preparing titanium dioxide film under room temperature
InactiveCN1467305AWith photoelectric response characteristicsBroaden your optionsCatalyst activation/preparationSuperimposed coating processLiquid stateRoom temperature
A process for preparing TiO2 film at room temperature includes such steps as evaporating metal titanium on electrically conductive substrate by vacuum sputter method and electrochemically oxidizing it. The resultant film has nano-class minipore structure and can generate photocurrent and photovoltage. After it is sensitised by dye, it can be used for solid-state or liquid-state solar battery.
Owner:INST OF CHEM CHINESE ACAD OF SCI
Manufacturing method of back passivation cell
ActiveCN101976701AGood photoelectric responseSuperior front passivationFinal product manufactureSemiconductor devicesProtonSlurry
The invention relates to the technical field of solar cell production methods, in particular to a manufacturing method of a back passivation cell. The method comprise the following process steps of: firstly, washing and flocking a P-type monocrystalline silicon piece; carrying out B diffusion; putting into an oxidation furnace for growing wet oxygen; etching the front side of the silicon piece with etching slurry, and then washing the silicon piece with ionized water and ultrasound; carrying out P diffusion on the silicon piece; etching edges with plasmas; washing with a HF solution; putting into the oxidation furnace for growing thin and dry oxygen; depositing silicon nitride on the front side of the silicon piece, and depositing silicon nitride or silicon carbide or sputtering aluminum on the back side of the silicon piece; and finally carrying out electrode printing and sintering. In the invention, laminating passivation is simultaneously applied to the front side and the back side, meanwhile, the B diffusion is applied to the back side, and the cell has excellent properties of front and back passivation, therefore, the cell has favorable photoelectric response in a long-wave band, in addition, the back side subjected to laminating passivation has favorable reflection action so that protons reaching the back side are reflected to a cell piece once again, and thus, the protons can be utilized fully.
Owner:TRINA SOLAR CO LTD
Method for spontaneously depositing three-dimensional graphene on conductive substrate
The invention discloses a method for spontaneously depositing three-dimensional graphene on a conductive substrate and belongs to the field of a functional material. The method comprises the following steps of: step one, preparing an 8-20 mg / mL oxidized graphene solution by an oxidizing graphite stripping method; step two, diluting the 8-20 mg / mL oxidized graphene solution so that the concentration of the oxidized graphene solution is changed into 0.5-3 mg / mL; step three, putting the conductive substrate in the oxidized graphene solution for standing, taking out the conductive substrate after reacting for 6-12 hours, thereby obtaining the conductive substrate with three-dimensional graphene deposited on the surface of the conductive substrate; and step four, directly carrying out freeze drying on the three-dimensional graphene obtained in the step three or performing freeze drying after washing, thus obtaining dry porous functionalized three-dimensional graphene or pure dry porous three-dimensional graphene. The method is simple in preparation process and friendly to environment; and the obtained three-dimensional graphene is three-dimensional and porous in structure, and has the characteristics of large specific surface area and good toughness.
Owner:BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
Zinc oxide/bismuth vanadate heterojunction film with characteristic of visible light responding, and preparation method and applications thereof
ActiveCN106944037AReduce the binding forceProcess is easy to controlGas treatmentWater/sewage treatment by irradiationHeterojunctionBismuth vanadate
The invention provides a zinc oxide / bismuth vanadate heterojunction film with a characteristic of visible light responding, and a preparation method and applications thereof. The preparation method comprises the following steps: at first, preparing a BiVO4 precursor solution and a ZnO precursor solution, then soaking a substrate into the BiVO4 precursor solution to prepare an amorphous BiVO4 film with a certain thickness by utilizing a reverse layer-layer self assembly technology utilizing a hydroxyl layer electrostatic adsorption effect, irradiating the amorphous BiVO4 film by UV rays to form a hydroxyl layer, then soaking the substrate into the amorphous BiVO4 film to carry out secondary reverse layer-layer self assembly to form a BiVO4-ZnO amorphous film, and finally carry out crystallization at a constant temperature of 500 DEG C to obtain the zinc oxide / bismuth vanadate heterojunction film. The process is simple and controllable, the requirements on experiment conditions are low, and the prepared zinc oxide / bismuth vanadate heterojunction film has a wide application prospect in the photocatalysis field.
Owner:SHAANXI UNIV OF SCI & TECH
Anodization two-step preparation method of cuprous oxide nanosheet powder material
InactiveCN102965711ASimple manufacturing processReduce energy consumptionAnodisationCopper foilPollution
The invention discloses an anodization two-step preparation method of a cuprous oxide nanosheet powder material. The method comprises the following steps: anodization: using an ammonium chloride buffer solution as an electrolyte, regulating the pH value of the electrolyte to 4-10, and carrying out anodization reaction by using a copper foil as the anode and a graphite electrode or platinum electrode as the cathode; and foaming treatment: after the reaction finishes, cleaning the copper foil, drying, immersing the copper foil in a low-concentration oxydol solution, carrying out foaming reaction for 10-60 minutes, taking out, flushing, and drying to obtain the cuprous oxide nanosheet powder material which is attached to the copper foil substrate. The preparation technique disclosed by the invention is simple and easy to implement, has the advantages of low energy consumption, low cost and no pollution, is suitable for mass production, and has very important meanings for saving the energy sources and resources and improving the environment; and the prepared powder material has the advantages of large specific area and high catalytic activity, can be well attached to the substrate, and is convenient for recovery and reutilization.
Owner:SHANGHAI JIAO TONG UNIV
Polyoxometallate-based composite film
InactiveCN104112820AImprove protectionEasy to operateSolid-state devicesSemiconductor/solid-state device manufacturingComposite filmWater soluble
The invention relates to a composite film, and specifically relates to a polyoxometallate-based composite film. According to the invention, the Keplerate type polyoxometallate and water-soluble polyphenylenevinylene derivatives are taken as raw materials, a preprocessed ITO conductive glass is taken as the substrate, and a composite film having the advantage of photoelectric response is prepared through the layer-by-layer self-assembly technology. The whole thin film preparation process adopts an aqueous solution, so the preparation process is environmental friendly and harmless, and the operation is simple and practicable. The prepared composite film shows good photoelectric response through photocurrent transient tests, and the prepared composite film is a photoelectric system having potential application foreground.
Owner:NORTHEAST NORMAL UNIVERSITY
Multifunctional polyurethane derivative containing triarylamine structure and tetrastyrene group as well as preparation method and application thereof.
ActiveCN109336787AImprove thermal stabilityImprove high temperature resistanceUrea derivatives preparationOrganic compound preparationFluorescence sensingElectrochromism
The invention relates to a multifunctional polyurethane derivative containing a triarylamine structure and a tetrastyrene group as well as a preparation method and the application thereof. The invention aims to solve the problem that conventional multifunctional materials have few function types. The multifunctional polyurethane derivative provided by the invention is prepared by firstly synthesizing two monomers and 1,2-bis(4-hydroxyphenyl)-1,2-diphenylethylene containing a hydroxyl structure and simultaneously introducing 4,4'-diphenylmethane diisocyanate by means of copolymerization. The multifunctional polyurethane derivative has electrochromism and fluorescence sensing hole transport functions, can be used as an automotive rearview mirror material and a display material and can be used for preparing explosive detection and memory performance devices. The multifunctional polyurethane derivative provided by the invention is applied to the field of multifunctional materials.
Owner:HEILONGJIANG UNIV
Preparation method for cuprous oxide coated molding carbon material
InactiveCN108400346AEasy to prepareStable film forming effectFinal product manufactureCell electrodesIonHeavy metals
The invention relates to the field of new energy and sewage treatment, and aims at providing a preparation method of a cuprous oxide coated molding carbon material. The method comprises the followingsteps of grinding and cleaning a molding carbon material, and soaking in mixed solution of copper nitrate and a stabilizer; carrying out electric reduction treatment; washing with deionized water, andsoaking in the deionized water at room temperature; and carrying out vacuum drying under a dark condition to obtain the cuprous oxide coated molding carbon material. According to the method, the molding carbon material is used as a cuprous oxide substrate material for the first time and more conforms to the actual application requirements; a prepared product has remarkable photoelectric responseunder the visible light irradiation; the thickness of a cuprous oxide thin film can be adjusted by regulating the current density and the electrodeposition time; the preparation method is simple, thefilm forming effect is stable, and mass production is facilitated. The method is carried out at low temperature, the current density is small, the current utilization rate is high, and the energy costis low. The used electrolyte is low in heavy metal content and easy to treat.
Owner:ZHEJIANG UNIV
Amorphous tellurium-cadmium-mercury/crystalline silicon heterojunction infrared-detector and manufacturing method thereof
InactiveCN102903783AGood lattice matchingNo choiceFinal product manufacturePhotovoltaic energy generationHeterojunctionWorking temperature
The invention relates to an amorphous tellurium-cadmium-mercury / crystalline silicon heterojunction infrared-detector, which is characterized by being composed of a crystalline silicon substrate, amorphous tellurium-cadmium-mercury, a first metal electrode and a second metal electrode, wherein the amorphous tellurium-cadmium-mercury and the crystalline silicon substrate form heterojunction, the first metal electrode is connected with the amorphous tellurium-cadmium-mercury, and the second metal electrode is connected with the crystalline silicon substrate. The preparation process comprises the following steps of substrate cleaning, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, metal electrode preparation and package test; or substrate cleaning, second metal electrode preparation, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, first metal electrode preparation and package test. The amorphous semiconductor material has no selectivity for the substrate, the lattice matching performance between materials forming heterojunction is better, and the significant photoelectric response exists. The optimum working temperature of the detector is close to room temperature, two stages of semiconductors are utilized for refrigeration, and the weight, the power consumption and the manufacturing cost of the infrared detector assembly are reduced.
Owner:KUNMING INST OF PHYSICS
Controllable and perpendicular bismuth selenide nanosheet thin film and preparation method thereof
InactiveCN108493274AQuality improvementGood photoelectric responseFinal product manufactureChemical vapor deposition coatingElectricityMicrometer
The invention aims to provide a controllable and perpendicular bismuth selenide nanosheet thin film. The thin film comprises Bi2Se3 nanosheets perpendicular to a matrix, wherein the sizes of the nanosheets are 50 nanometers to 50 micrometers. The Bi2Se3 thin film is prepared by a chemical vapor deposition method. By the method, the high-quality thin film having obvious photoelectric response can be controllably prepared, it is found out that the thin film has N-type conductive characteristic by test, the thin film and a P-type silicon substrate can form an N-type thin film / P-type silicon waferdual-layer structure, and the thin film has obvious visible light and near-infrared light photoelectric response capability and relatively rapid photoelectric response time, particularly has high photoresponse capability at a near-infrared wave band and has favorable electric detection application prospect.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Preparation method and application of biochemical sensor
InactiveCN113092452AHeavy loadPromote absorptionAnalysis by subjecting material to chemical reactionMaterial electrochemical variablesBio moleculesTungstate
The invention relates to a preparation method and application of a biochemical sensor. The cerium and silver doped antimony tungstate is used as a substrate material, the large specific surface area of the cerium and silver doped antimony tungstate can increase capture of light and loading of biomolecules, doping of cerium and silver elements can provide an electronic path, a plasma effect is caused, and the separation efficiency of photo-generated charges is improved. Silver sulfide grows on cerium and silver doped antimony tungstate through in-situ consumption of part of silver ions by adopting a dipping method, and meanwhile, an energy band matching structure formed by modifying indium sulfide on cerium and silver doped antimony tungstate / silver sulfide has good photoelectric response. On the other hand, cadmium sulfide / polydopamine with excellent conductivity is used as a signal marker, polydopamine can be directly combined with biomolecules through Michael addition or Schiff base, cadmium sulfide can be better matched with cerium and silver doped antimony tungstate / silver sulfide / indium sulfide in energy bands, and the photoelectric conversion efficiency of the sensor is effectively improved. The biochemical sensor constructed based on the method has a wide linear range and high sensitivity, and has important significance on detection of a small cell lung cancer marker neuron-specific enolase.
Owner:UNIV OF JINAN
Three-junction solar cell with quantum well structure
ActiveCN104241416AUniform current distributionIncrease currentPhotovoltaic energy generationSemiconductor devicesQuantum wellSolar cell
The invention discloses a three-junction solar cell with a quantum well structure. The three-junction solar cell sequentially comprises a first subsidiary cell as a substrate, a first tunnel junction, a second subsidiary cell, a second tunnel junction and a third subsidiary cell. Lattice matching is adopted among the three subsidiary cells, and the three subsidiary cells are connected through the tunnel junctions. The first subsidiary cell is a Ge cell, the second subsidiary cell is an InxGa1-xNyAs1-y / GaAs quantum well cell, and the third subsidiary cell is a GaInP cell. According to the solar cell, the formed energy band gap combination is about 0.67 eV / 1.3 eV / 1.8 eV, the energy band gap difference delta Eg1 of the second subsidiary cell and the first subsidiary cell is about 0.63, the energy band gap difference delta Eg2 of the third subsidiary cell and the second subsidiary cell is about 0.5 eV, and the two energy band gap differences are more approximate; moreover, the energy band gap of the third subsidiary cell GaInP is about 1.8 eV, more photons can be absorbed in comparison with a traditional GaInP cell, and therefore currents of the three subsidiary cells can be distributed more evenly.
Owner:ZHONGSHAN DEHUA CHIP TECH CO LTD
Preparation method of Fe2O3 thin film electrode and application of Fe2O3 thin film electrode to photoelectric chemical glucose sensor
ActiveCN109738502AGood photoelectric responseEasy to prepareLiquid/solution decomposition chemical coatingMaterial electrochemical variablesThin film electrodeGlucose sensors
The invention discloses a preparation method of a Fe2O3 thin film electrode and application of the Fe2O3 thin film electrode to a photoelectric chemical glucose sensor. The preparation method comprises the steps that ferric nitrate is dissolved in ethanol to obtain an iron source liquid precursor; the surface of a conductive substrate is rotatably coated with the iron source liquid precursor to obtain a thin film precursor; and in the rotatably coating process, the number of layers of rotatably coating is at least one layer, the layers are firstly heated to 145-155 DEG C after each layer of rotatably coating, and then are heated to 345-355 DEG C to treat, and the thin film precursor is sintered to obtain the Fe2O3 thin film electrode. The Fe2O3 thin film electrode prepared by the preparation method is directly assembled into the photoelectric chemical sensor for detecting glucose, and has the advantages of good selectivity and quick response. In addition, the preparation method is simple and has no pollution, the preparation process of the glucose photoelectric chemical sensor is simple, and a high commercial application prospect is achieved.
Owner:SHANDONG UNIV
Inorganic perovskite thick film composite material semiconductor device and preparation method thereof
ActiveCN109888049ALow costEasy accessFinal product manufactureSemiconductor devicesHeat resistanceMoisture resistance
The invention discloses an inorganic perovskite thick film composite material semiconductor device and a preparation method thereof; by adoption of the preparation method, continuous growth can be carried out, and an X-ray detector of a perovskite polycrystalline thick film with large size and high crystallinity is prepared, wherein the structure of the detector is transparent glass / CsPbBr3 perovskite polycrystalline thick film / Au electrode full-inorganic perovskite planar semiconductor detector. The prepared detector is relatively thick in thickness, relatively high in switching ratio, relatively high in response speed and excellent in water oxygen stability. The preparation method of the semiconductor detector is simple in steps, low in cost, controllable in low temperature in the process, and the prepared CsPbBr3 material is excellent in moisture resistance and heat resistance; and the method is applied to large-scale commercial production and has remarkable industrial popularization value.
Owner:SHANGHAI UNIV
Preparation method for stannous sulfide nanosheet and photoelectric detector prepared based on stannous sulfide nanosheet
InactiveCN105551946AImprove crystal qualityLarge scaleMaterial nanotechnologySemiconductor/solid-state device manufacturingThermal insulationGas phase
The invention discloses a preparation method for a stannous sulfide nanosheet and a photoelectric detector prepared based on the stannous sulfide nanosheet. The preparation method comprises the following steps of putting stannous sulfide powder into a clean quartz boat; enabling a completely washed SiO2 / Si substrate to be horizontally placed above the quartz boat; then putting the quartz boat in a middle position of a quartz tube heating region, and sealing the quartz tube; pumping inert gas to the quartz tube and maintaining for 10-30min so as to completely exhaust air from the quartz tube; heating the quartz tube to 700-750 DEG C, and reducing gas flow of the inert gas in the heating process; performing thermal insulation for a high temperature region at a temperature of 700-720 DEG C of the quartz tube for 6-12min, and then naturally cooling; after the temperature of the quartz tube is naturally cooled to 560-600 DEG C, pushing the whole quartz tube out of a tubular furnace, and performing rapid cooling; and when the quartz tube is cooled to room temperature, opening the quartz tube and taking out a sample to finish the preparation of the sample. By adoption of the preparation method, the high-quality stannous sulfide nanosheet can be prepared by a simple physical vapor deposition method.
Owner:GUANGDONG UNIV OF TECH
Two-step preparation method of anodic oxidation of cuprous oxide nanosheet powder material
InactiveCN102965711BSimple manufacturing processReduce energy consumptionAnodisationCopper foilTwo step
The invention discloses an anodization two-step preparation method of a cuprous oxide nanosheet powder material. The method comprises the following steps: anodization: using an ammonium chloride buffer solution as an electrolyte, regulating the pH value of the electrolyte to 4-10, and carrying out anodization reaction by using a copper foil as the anode and a graphite electrode or platinum electrode as the cathode; and foaming treatment: after the reaction finishes, cleaning the copper foil, drying, immersing the copper foil in a low-concentration oxydol solution, carrying out foaming reaction for 10-60 minutes, taking out, flushing, and drying to obtain the cuprous oxide nanosheet powder material which is attached to the copper foil substrate. The preparation technique disclosed by the invention is simple and easy to implement, has the advantages of low energy consumption, low cost and no pollution, is suitable for mass production, and has very important meanings for saving the energy sources and resources and improving the environment; and the prepared powder material has the advantages of large specific area and high catalytic activity, can be well attached to the substrate, and is convenient for recovery and reutilization.
Owner:SHANGHAI JIAOTONG UNIV
Preparation of three-dimensional conductive framework and application of three-dimensional conductive framework in ferric oxide photo-anode
ActiveCN113774418AGood photoelectric responseIncrease photocurrentElectrodesPhotocurrentMaterials science
The invention belongs to the technical field of photoelectrochemistry, and provides preparation of a three-dimensional conductive framework and an application of the three-dimensional conductive framework in a ferric oxide photo-anode. The three-dimensional conductive framework is obtained by covering two layers of thin films formed by polystyrene spheres with grain composition on the surface of conductive glass FTO through a physical deposition method, then spin-coating a conductive substrate solution and then sintering. The three-dimensional conductive framework can be used for preparing a ferric oxide photo-anode, namely the three-dimensional conductive framework is used as a substrate to be attached to a ferric oxide semiconductor film. The prepared iron oxide semiconductor film grown on the three-dimensional conductive framework in situ has excellent photoelectric response, and compared with an iron oxide semiconductor film grown on FTO in situ, the starting potential of the iron oxide semiconductor film in situ is shifted by 0.23 mV negatively, and the light current is improved by 8 times and reaches 1.2 mA / cm<2> (1.23 V vs.RHE.). Meanwhile, the whole preparation method is simple, complex preparation equipment is not needed, and industrialization is facilitated.
Owner:CHANGZHOU VOCATIONAL INST OF ENG
Triarylamine polymer, preparation method and application thereof
PendingCN113372536ASimple preparation processRaw materials are easy to getSolid-state devicesSemiconductor/solid-state device manufacturingPerovskite solar cellOrganic electroluminescence
The invention discloses a triarylamine polymer and application thereof. The triarylamine polymer has a structural general formula shown in the following formula (I), wherein the definition of substituent groups in the formula (I) is the same as that in the specification. According to the invention, the triarylamine polymer has good stability and hole mobility, and can be used as a hole transport material to be applied to a quantum dot light-emitting device (QLED), an organic light-emitting device (OLED) and a perovskite solar cell (PSC).
Owner:杭州领挚科技有限公司
In-situ compounded carbon quantum dot - titanium dioxide nano materials with titanium dioxide nanotube array, and preparation method thereof
ActiveCN108034981ALarge specific surface areaSimple preparation processMaterial nanotechnologyPhysical/chemical process catalystsSolventPhotocurrent
Owner:SANITARY EQUIP INST ACAD OF MILITARY MEDICAL SCI PLA
Preparation method of self-powered sensor
InactiveCN113252747AHigh sensitivityEasy to separateMaterial electrochemical variablesPower sensorPhotocathode
The invention relates to a preparation method and application of a self-powered sensor. Specifically, the invention designs a self-energized sensor which utilizes a photoanode WO3 / In2S3 and a photocathode Pt-ZnO / Bi2S3 to promote generation of anode photocurrent at the same time, and the self-energized sensor can be used for photoelectrochemical immunosensing detection. Under the irradiation of visible light, the Pt-ZnO / Bi2S3 serving as the photoelectric cathode has a relatively good energy band matching structure and can provide stable cathode photocurrent; the WO3 / In2S3 heterostructure provides stable anode photocurrent for the photoanode substrate material, and the larger specific surface area of the WO3 / In2S3 heterostructure can increase the capture of light and the load of biomolecules. In addition, photo-induced electrons of the photoanode WO3 / In2S3 flow along an external circuit to attract photo-induced holes of the photocathode Pt-ZnO / Bi2S3, the carrier transmission rate is increased, and the photocurrent response of the anode is improved. The prepared BiNS-Fe@Fe serves as a marker, competitively consumes light energy and electron donors, the stability and sensitivity of the sensor are improved, and the self-powered sensor constructed by the invention is used for rapid and sensitive photoelectrochemical immunosensing detection of tumor markers, and has a wider detection range and a lower detection limit.
Owner:UNIV OF JINAN
Method for preparing titanium dioxide film under room temperature
InactiveCN1203212CWith photoelectric response characteristicsBroaden your optionsCatalyst activation/preparationSuperimposed coating processTitanium metalRoom temperature
The invention belongs to the technical field of functional materials, and in particular relates to a method for preparing titanium dioxide thin films at room temperature. Metal titanium is vapor-deposited into a film by vacuum sputtering, and then the metal film is oxidized into a titanium dioxide film by electrochemical oxidation. The film has a nano-scale microporous structure and can generate photocurrent and photovoltage. When it was sensitized by dye to form a battery, it produced an obvious photoelectric response. This method can deposit titanium dioxide thin films on a variety of conductive substrates and realize dye-sensitized solid or liquid solar cells.
Owner:INST OF CHEM CHINESE ACAD OF SCI
Silicon-based molybdenum disulfide heterojunction photoelectric sensor and preparation method
ActiveCN109935654AGood photoelectric responseReduce usageFinal product manufactureVacuum evaporation coatingHeterojunctionPhotodetector
The invention belongs to the field of photoelectric sensors, and provides a silicon-based molybdenum disulfide heterojunction photoelectric sensor and a preparation method thereof, so as to overcome the shortcoming of a complex preparation process of the existing multi-layer molybdenum disulfide / silicon heterojunction photodetector. The multi-layer molybdenum disulfide is directly disposed on theupper surface of a silicon substrate without precise transfer, a photoresist is directly used as an insulating layer, the use of a SiO2 layer is effectively avoided, a top electrode is directly disposed right above the multi-layer molybdenum disulfide through a window opened in the photoresist, the top electrode preparation difficulty is greatly reduced, the structure is simple, and the preparation process difficulty is small. Besides, the sensor expresses good photoelectric response in visible light and near-infrared regions, the response time can reach 150 to 200 [mu]s, and the sensitivity is thus higher.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
A kind of titanium dioxide nanotube array in-situ composite carbon quantum dot-titania nanomaterial and preparation method thereof
ActiveCN108034981BLarge specific surface areaSimple preparation processMaterial nanotechnologyPhysical/chemical process catalystsSolventPhotocurrent
The invention discloses an in-situ compounded carbon quantum dot - titanium dioxide nano materials with a titanium dioxide nanotube array, and a preparation method thereof. Firstly, the titanium dioxide nanotube array without a fixed shape is obtained with an anodic oxidation method, and the in-situ compounded carbon quantum dot - titanium dioxide nano materials are obtained with a solvent-thermalmethod. The in-situ compounded carbon quantum dot - titanium dioxide nano materials with the titanium dioxide nanotube array, prepared with the preparation method disclosed by the invention, have obvious photocurrent response, and excellent light degradation property for organic simulated pollutants under excitation by ultraviolet and visible light.
Owner:SANITARY EQUIP INST ACAD OF MILITARY MEDICAL SCI PLA
A stable lead-free low bandgap all-inorganic perovskite a 2 pdx 6 Nanocrystal and its preparation method
ActiveCN108726583BGood dispersionUniform sizeRuthenium/rhodium/palladium/osmium/iridium/platinum compoundsNanotechnologyPhotodetectorPhysical chemistry
The invention discloses a preparation method for stable full-inorganic perovskite A2PdX6 nanocrystalline with no lead and low band gap (A=Cs, Rb, K or multiple mixing; X=Cl, Br, I or multiple mixing thereof), the preparation method takes A2PdX6 micron-crystalline as a precursor material, and then the nanocrystalline is synthesized by using a rapid antisolvent method, the main synthesis process isas follows: Firstly, A2PdX6 micron-crystalline is synthesized by a solution method or a solid phase method; then the obtained A2PdX6 micron-crystalline is dissolved in a strong polar solvent under heating condition to obtain a clear and transparent precursor solution; after the precursor solution is cooled to room temperature, a certain amount of the precursor solution is rapidly added to the antisolvent under the stirring condition, and A2PdX6 nanocrystalline colloidal solution with a particle size about 3 nm is rapidly formed, the synthesis method provided by the invention is fast, simple, can be operated at normal temperature, has good reproducibility and is environmentally friendly; at the same time, the product has uniform size, good dispersibility, high stability and excellent photoelectric response; the preparation method can be used in fields such as light or photoelectrocatalysis, photodetectors, solar cells.
Owner:SUN YAT SEN UNIV
A kind of membrane electrode preparation method and its application method
ActiveCN110954580BSimple preparation processLow costMaterial electrochemical variablesDoped grapheneBismuth oxybromide
The invention discloses a membrane electrode preparation method and an application method thereof. The method comprises the following steps: preparing nitrogen-doped graphene quantum dot-bismuth oxybromide nanocomposites through a two-step hydrothermal method, and then functionalizing nitrogen-doped graphene quantum dot-bromine with hexadecyltrimethylammonium bromide The surface of the bismuth oxide nanocomposite material is positively charged, and then the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide nanocomposite material is dispersed in acetone to obtain a uniform colloidal solution, and then two pieces of the modified surface are taken. The denatured ITO electrode is put into the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide colloidal solution for electrophoretic deposition, and the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide ITO thin film modified electrode is obtained. The electrode provided by the invention can be used for photoelectrochemical quantitative detection of the dosage of acetaminophen, and has the characteristics of fast response time, wide linear range, low detection limit, good stability and the like.
Owner:HOHAI UNIV
A kind of silicon-based molybdenum disulfide heterojunction photoelectric sensor and preparation method thereof
ActiveCN109935654BGood photoelectric responseReduce usageFinal product manufactureVacuum evaporation coatingHeterojunctionEngineering
The invention belongs to the field of photoelectric sensors, and provides a silicon-based molybdenum disulfide heterojunction photoelectric sensor and a preparation method thereof, which are used to overcome the disadvantages of complex preparation processes of existing multilayer molybdenum disulfide / silicon heterojunction photodetectors. In the present invention, the multi-layer molybdenum disulfide is directly arranged on the upper surface of the silicon substrate without precise transfer, and the photoresist is directly used as the insulating layer to effectively avoid SiO 2 layer, and the top electrode is directly arranged on the top of the multi-layer molybdenum dioxide by opening a window on the photoresist, which greatly reduces the difficulty of top electrode preparation, that is, the structure is simple and the preparation process is difficult; at the same time, the sensor of the present invention can be used in visible light It has a good photoelectric response in the near-infrared region, and the response time can reach 150-200us, that is, the sensitivity is higher.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Method for spontaneously depositing three-dimensional graphene on conductive substrate
Owner:BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
Bismuth iodine cluster hybrid semiconductor perovskite material based on 1-butyl-4-methylpyridinium cation
PendingCN114369058AEnhanced light absorptionModerate band gapOrganic chemistry methodsSolid-state devicesSemiconductor materialsMethylpyridinium
The invention discloses a bismuth iodine cluster hybrid perovskite-like material based on a 1-butyl-4-methylpyridinium cation and a preparation method of the bismuth iodine cluster hybrid perovskite-like material. The perovskite-like compound hybrid material is synthesized from 1-butyl-4-methyl pyridine chloride, bismuth iodide and potassium iodide, the molecular structure of the perovskite-like compound hybrid material is (BMPY) 3 (Bi2I9), and in the formula, BMPY is a 1-butyl-4-methylpyridinium cation. The hybrid semiconductor material is a perovskite-like semiconductor material with moderate forbidden band width and good photoelectric response effect, and DFT calculation shows that the hybrid semiconductor material is a charge transfer salt. The material has the advantages of being cheap, completely free of lead and easy to purify, and has good solubility and stability. The material can be used as a semiconductor material in a halide-based perovskite photoelectric device.
Owner:CHINA JILIANG UNIV
Double-photosensitive double-electrode photoelectrochemical sensor as well as preparation method and application thereof
ActiveCN114577881APerformance comparisonEasy to operateMaterial electrochemical variablesNanoparticleCarbon nitride
The invention discloses a double-photosensitive double-electrode photoelectrochemical sensor as well as a preparation method and application thereof. The sensor comprises a counter electrode and a working electrode, wherein the surface of the counter electrode is modified with three-dimensional graphite phase carbon nitride loaded with gold nanoparticles, the surface of the counter electrode is modified with nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron, and the working electrode is self-assembled with a specific aptamer probe. The preparation method comprises the following steps: modifying three-dimensional graphite phase carbon nitride loaded with gold nanoparticles, a nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron and a specific aptamer probe on conductive glass, and constructing a dual-photosensitive dual-electrode system by the three-dimensional graphite phase carbon nitride, the nitrogen-doped carbon-cuprous oxide shell-core tetrakaidecahedron and the specific aptamer probe. The double-photosensitive double-electrode photoelectrochemical sensor disclosed by the invention has the advantages of high stability, long service life, strong anti-interference capability, wide detection range, low detection limit and the like, can realize specific detection of pollutants (such as antibiotics) in media such as water bodies and organisms, is high in utilization rate, and has very good use value and application prospect.
Owner:HUNAN UNIV
A kind of quantum dot modified zno nanorod array electrode and preparation method thereof
ActiveCN103400699BControl thicknessPromote absorptionMaterial nanotechnologyNon-insulated conductorsLight responseElectrolyte
The invention relates to a quantum dot-modified ZnO nanorod array electrode and a preparation method thereof, and relates to an array electrode and a preparation method thereof. With the adoption of the quantum dot-modified ZnO nanorod array electrode and the preparation method thereof, the technical problems that the photocatalytic efficiency of ZnO nano materials is low under visible light, and the utilization rate of the sunlight is low are solved. The preparation method comprises the following steps: 1, taking conductive glass as a substrate, and preparing a highly ordered ZnO nanorod array by adopting a hydrothermal method; and 2, alternately depositing polyelectrolyte and quantum dot particles on the surface of the ZnO nanorod array, so as to obtain the uniform coated quantum dot-modified ZnO nanorod array electrode. With the adoption of the method for preparing photoelectrodes, the length of the ZnO nanorod array and the thickness of the coated quantum dot can be controlled; and the electrode prepared by the method provided by the invention exhibits good photoelectrocatalytic activity and visible-light response characteristics under irradiation of the visible light. The quantum dot-modified ZnO nanorod array electrode and the preparation method thereof are used in the fields of photoelectrocatalytic degradation of environmental pollutants, photoelectrocatalytic synthesis and water photolysis for hydrogen generation.
Owner:HARBIN INST OF TECH
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