44results about How to "Good photoelectric response" patented technology

The invention discloses a three-junction solar cell with a quantum well structure. The three-junction solar cell sequentially comprises a first subsidiary cell as a substrate, a first tunnel junction, a second subsidiary cell, a second tunnel junction and a third subsidiary cell. Lattice matching is adopted among the three subsidiary cells, and the three subsidiary cells are connected through the tunnel junctions. The first subsidiary cell is a Ge cell, the second subsidiary cell is an InxGa1-xNyAs1-y / GaAs quantum well cell, and the third subsidiary cell is a GaInP cell. According to the solar cell, the formed energy band gap combination is about 0.67 eV / 1.3 eV / 1.8 eV, the energy band gap difference delta Eg1 of the second subsidiary cell and the first subsidiary cell is about 0.63, the energy band gap difference delta Eg2 of the third subsidiary cell and the second subsidiary cell is about 0.5 eV, and the two energy band gap differences are more approximate; moreover, the energy band gap of the third subsidiary cell GaInP is about 1.8 eV, more photons can be absorbed in comparison with a traditional GaInP cell, and therefore currents of the three subsidiary cells can be distributed more evenly.

The invention discloses an anodization two-step preparation method of a cuprous oxide nanosheet powder material. The method comprises the following steps: anodization: using an ammonium chloride buffer solution as an electrolyte, regulating the pH value of the electrolyte to 4-10, and carrying out anodization reaction by using a copper foil as the anode and a graphite electrode or platinum electrode as the cathode; and foaming treatment: after the reaction finishes, cleaning the copper foil, drying, immersing the copper foil in a low-concentration oxydol solution, carrying out foaming reaction for 10-60 minutes, taking out, flushing, and drying to obtain the cuprous oxide nanosheet powder material which is attached to the copper foil substrate. The preparation technique disclosed by the invention is simple and easy to implement, has the advantages of low energy consumption, low cost and no pollution, is suitable for mass production, and has very important meanings for saving the energy sources and resources and improving the environment; and the prepared powder material has the advantages of large specific area and high catalytic activity, can be well attached to the substrate, and is convenient for recovery and reutilization.

The invention discloses an in-situ compounded carbon quantum dot - titanium dioxide nano materials with a titanium dioxide nanotube array, and a preparation method thereof. Firstly, the titanium dioxide nanotube array without a fixed shape is obtained with an anodic oxidation method, and the in-situ compounded carbon quantum dot - titanium dioxide nano materials are obtained with a solvent-thermalmethod. The in-situ compounded carbon quantum dot - titanium dioxide nano materials with the titanium dioxide nanotube array, prepared with the preparation method disclosed by the invention, have obvious photocurrent response, and excellent light degradation property for organic simulated pollutants under excitation by ultraviolet and visible light.

The invention belongs to the technical field of functional materials, and in particular relates to a method for preparing titanium dioxide thin films at room temperature. Metal titanium is vapor-deposited into a film by vacuum sputtering, and then the metal film is oxidized into a titanium dioxide film by electrochemical oxidation. The film has a nano-scale microporous structure and can generate photocurrent and photovoltage. When it was sensitized by dye to form a battery, it produced an obvious photoelectric response. This method can deposit titanium dioxide thin films on a variety of conductive substrates and realize dye-sensitized solid or liquid solar cells.

The invention belongs to the field of photoelectric sensors, and provides a silicon-based molybdenum disulfide heterojunction photoelectric sensor and a preparation method thereof, so as to overcome the shortcoming of a complex preparation process of the existing multi-layer molybdenum disulfide / silicon heterojunction photodetector. The multi-layer molybdenum disulfide is directly disposed on theupper surface of a silicon substrate without precise transfer, a photoresist is directly used as an insulating layer, the use of a SiO2 layer is effectively avoided, a top electrode is directly disposed right above the multi-layer molybdenum disulfide through a window opened in the photoresist, the top electrode preparation difficulty is greatly reduced, the structure is simple, and the preparation process difficulty is small. Besides, the sensor expresses good photoelectric response in visible light and near-infrared regions, the response time can reach 150 to 200 [mu]s, and the sensitivity is thus higher.

The invention discloses an in-situ compounded carbon quantum dot - titanium dioxide nano materials with a titanium dioxide nanotube array, and a preparation method thereof. Firstly, the titanium dioxide nanotube array without a fixed shape is obtained with an anodic oxidation method, and the in-situ compounded carbon quantum dot - titanium dioxide nano materials are obtained with a solvent-thermalmethod. The in-situ compounded carbon quantum dot - titanium dioxide nano materials with the titanium dioxide nanotube array, prepared with the preparation method disclosed by the invention, have obvious photocurrent response, and excellent light degradation property for organic simulated pollutants under excitation by ultraviolet and visible light.

The invention discloses a preparation method for stable full-inorganic perovskite A2PdX6 nanocrystalline with no lead and low band gap (A=Cs, Rb, K or multiple mixing; X=Cl, Br, I or multiple mixing thereof), the preparation method takes A2PdX6 micron-crystalline as a precursor material, and then the nanocrystalline is synthesized by using a rapid antisolvent method, the main synthesis process isas follows: Firstly, A2PdX6 micron-crystalline is synthesized by a solution method or a solid phase method; then the obtained A2PdX6 micron-crystalline is dissolved in a strong polar solvent under heating condition to obtain a clear and transparent precursor solution; after the precursor solution is cooled to room temperature, a certain amount of the precursor solution is rapidly added to the antisolvent under the stirring condition, and A2PdX6 nanocrystalline colloidal solution with a particle size about 3 nm is rapidly formed, the synthesis method provided by the invention is fast, simple, can be operated at normal temperature, has good reproducibility and is environmentally friendly; at the same time, the product has uniform size, good dispersibility, high stability and excellent photoelectric response; the preparation method can be used in fields such as light or photoelectrocatalysis, photodetectors, solar cells.

The invention discloses a membrane electrode preparation method and an application method thereof. The method comprises the following steps: preparing nitrogen-doped graphene quantum dot-bismuth oxybromide nanocomposites through a two-step hydrothermal method, and then functionalizing nitrogen-doped graphene quantum dot-bromine with hexadecyltrimethylammonium bromide The surface of the bismuth oxide nanocomposite material is positively charged, and then the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide nanocomposite material is dispersed in acetone to obtain a uniform colloidal solution, and then two pieces of the modified surface are taken. The denatured ITO electrode is put into the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide colloidal solution for electrophoretic deposition, and the functionalized nitrogen-doped graphene quantum dot-bismuth oxybromide ITO thin film modified electrode is obtained. The electrode provided by the invention can be used for photoelectrochemical quantitative detection of the dosage of acetaminophen, and has the characteristics of fast response time, wide linear range, low detection limit, good stability and the like.

The invention belongs to the field of photoelectric sensors, and provides a silicon-based molybdenum disulfide heterojunction photoelectric sensor and a preparation method thereof, which are used to overcome the disadvantages of complex preparation processes of existing multilayer molybdenum disulfide / silicon heterojunction photodetectors. In the present invention, the multi-layer molybdenum disulfide is directly arranged on the upper surface of the silicon substrate without precise transfer, and the photoresist is directly used as the insulating layer to effectively avoid SiO 2 layer, and the top electrode is directly arranged on the top of the multi-layer molybdenum dioxide by opening a window on the photoresist, which greatly reduces the difficulty of top electrode preparation, that is, the structure is simple and the preparation process is difficult; at the same time, the sensor of the present invention can be used in visible light It has a good photoelectric response in the near-infrared region, and the response time can reach 150-200us, that is, the sensitivity is higher.

The invention discloses a method for spontaneously depositing three-dimensional graphene on a conductive substrate and belongs to the field of a functional material. The method comprises the following steps of: step one, preparing an 8-20 mg / mL oxidized graphene solution by an oxidizing graphite stripping method; step two, diluting the 8-20 mg / mL oxidized graphene solution so that the concentration of the oxidized graphene solution is changed into 0.5-3 mg / mL; step three, putting the conductive substrate in the oxidized graphene solution for standing, taking out the conductive substrate after reacting for 6-12 hours, thereby obtaining the conductive substrate with three-dimensional graphene deposited on the surface of the conductive substrate; and step four, directly carrying out freeze drying on the three-dimensional graphene obtained in the step three or performing freeze drying after washing, thus obtaining dry porous functionalized three-dimensional graphene or pure dry porous three-dimensional graphene. The method is simple in preparation process and friendly to environment; and the obtained three-dimensional graphene is three-dimensional and porous in structure, and has the characteristics of large specific surface area and good toughness.

The invention relates to a quantum dot-modified ZnO nanorod array electrode and a preparation method thereof, and relates to an array electrode and a preparation method thereof. With the adoption of the quantum dot-modified ZnO nanorod array electrode and the preparation method thereof, the technical problems that the photocatalytic efficiency of ZnO nano materials is low under visible light, and the utilization rate of the sunlight is low are solved. The preparation method comprises the following steps: 1, taking conductive glass as a substrate, and preparing a highly ordered ZnO nanorod array by adopting a hydrothermal method; and 2, alternately depositing polyelectrolyte and quantum dot particles on the surface of the ZnO nanorod array, so as to obtain the uniform coated quantum dot-modified ZnO nanorod array electrode. With the adoption of the method for preparing photoelectrodes, the length of the ZnO nanorod array and the thickness of the coated quantum dot can be controlled; and the electrode prepared by the method provided by the invention exhibits good photoelectrocatalytic activity and visible-light response characteristics under irradiation of the visible light. The quantum dot-modified ZnO nanorod array electrode and the preparation method thereof are used in the fields of photoelectrocatalytic degradation of environmental pollutants, photoelectrocatalytic synthesis and water photolysis for hydrogen generation.