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Preparation method for stannous sulfide nanosheet and photoelectric detector prepared based on stannous sulfide nanosheet

A technology of stannous sulfide and nanosheets, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of lack of stannous sulfide nanosheets, complicated preparation process, and high risk of operation , to achieve the effects that are conducive to popularization and application, good photoelectric response, and high operational safety

Inactive Publication Date: 2016-05-04
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a lack of simple methods for preparing high-quality stannous sulfide nanosheets
Although "DeterministicTwo-DimensionalPolymorphismGrowthofHexagonaln-TypeSnS2andOrthorhombicp-TypeSnSCrystals, 2015,15,3703-3708," published by J.Ahn et al. on NANOLETTER, high-quality stannous sulfide nanosheets have been prepared by chemical vapor deposition, but The preparation method is complicated, and flammable and explosive hydrogen is used as the reducing gas, so the operation risk is high

Method used

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  • Preparation method for stannous sulfide nanosheet and photoelectric detector prepared based on stannous sulfide nanosheet
  • Preparation method for stannous sulfide nanosheet and photoelectric detector prepared based on stannous sulfide nanosheet
  • Preparation method for stannous sulfide nanosheet and photoelectric detector prepared based on stannous sulfide nanosheet

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Effect test

Embodiment 1

[0025] Embodiment 1: a kind of preparation method of stannous sulfide nanosheet, specifically comprises the following steps:

[0026] Step 1: First put the SiO 2 / Si substrate in H 2 SO 4 :H 2 o 2 Soak in the mixed solution prepared at a ratio of 3:1 for 1 hour, and then ultrasonically clean it with deionized water, acetone, alcohol, and deionized water once to obtain a clean SiO2 / Si substrate. Then place 0.02g of stannous sulfide powder in a clean quartz boat, place the cleaned SiO2 / Si substrate horizontally directly above the quartz boat; place the quartz boat in the middle of the quartz tube heating zone, and seal the quartz tube;

[0027] Step 2: Pass inert gas argon or nitrogen into the quartz tube as a protective gas, the gas flow rate is 300 sccm, and continue to ventilate for 20 minutes to completely discharge the air in the quartz tube;

[0028] Step 3: Heating the quartz tube: heat up the quartz tube, and during the heating process, when the temperature rises to...

Embodiment 2

[0033] Embodiment 2: A photoelectric device prepared by stannous sulfide nanosheets, the stannous sulfide nanosheets prepared in Example 1 are made into photoelectric devices by means of photolithography and other technical means, and the optoelectronic devices are tested by CHI660D electrochemical workstation. The photoresponse of infrared light, the infrared light (638nm) response curve of the optoelectronic device that makes in the present embodiment sees image 3 , the results show that the device has very good photodetection performance.

Embodiment 3

[0034] Embodiment 3: a kind of preparation method of stannous sulfide nanosheet, described preparation method comprises the steps:

[0035] Step 1, put stannous sulfide powder in a clean quartz boat, clean up SiO 2 The / Si substrate is placed horizontally directly above the quartz boat. Then place the quartz boat in the middle of the heating zone of the quartz tube to seal the quartz tube;

[0036] Step 2. Pass an inert gas into the quartz tube for 10-30 minutes to exhaust the air in the quartz tube;

[0037] Step 3. Heat the quartz tube to 700-750°C; reduce the flow rate of the inert gas during the heating process;

[0038] Step 4. Keep the quartz tube in a high temperature zone with a temperature of 700-720°C for 6-12 minutes, and then let it cool down naturally;

[0039] Step 5. After the quartz tube is naturally cooled to 560-600°C, push the quartz tube out of the tube furnace to cool down quickly;

[0040] Step 6. When the temperature of the quartz tube drops to room ...

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Abstract

The invention discloses a preparation method for a stannous sulfide nanosheet and a photoelectric detector prepared based on the stannous sulfide nanosheet. The preparation method comprises the following steps of putting stannous sulfide powder into a clean quartz boat; enabling a completely washed SiO2 / Si substrate to be horizontally placed above the quartz boat; then putting the quartz boat in a middle position of a quartz tube heating region, and sealing the quartz tube; pumping inert gas to the quartz tube and maintaining for 10-30min so as to completely exhaust air from the quartz tube; heating the quartz tube to 700-750 DEG C, and reducing gas flow of the inert gas in the heating process; performing thermal insulation for a high temperature region at a temperature of 700-720 DEG C of the quartz tube for 6-12min, and then naturally cooling; after the temperature of the quartz tube is naturally cooled to 560-600 DEG C, pushing the whole quartz tube out of a tubular furnace, and performing rapid cooling; and when the quartz tube is cooled to room temperature, opening the quartz tube and taking out a sample to finish the preparation of the sample. By adoption of the preparation method, the high-quality stannous sulfide nanosheet can be prepared by a simple physical vapor deposition method.

Description

technical field [0001] The invention relates to the technical field of new energy materials, in particular to a method for preparing stannous sulfide nanosheets and a photodetector based thereon. Background technique [0002] In recent years, the discovery of graphene, a layered nanomaterial, has made two-dimensional layered nanomaterials receive widespread attention and research. As a representative of two-dimensional layered semiconductor materials, layered metal chalcogenides have very broad application prospects in optoelectronic devices, photovoltaic industry, catalysis, energy storage and conversion due to their unique properties and structures. [0003] As an important member of layered metal sulfides, stannous sulfide is a hole-type layered semiconductor compound with orthorhombic crystal system, and the layers are combined by relatively weak van der Waals force. It has an optical direct bandgap of 1.2-1.5eV and an indirect bandgap of 1.0-1.2eV. Due to its narrow b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L31/00H01L31/09H01L31/032B82Y30/00B82Y40/00
CPCH01L21/203B82Y30/00B82Y40/00H01L31/00H01L31/032H01L31/09
Inventor 鹿方园王晓亭陈颖陈新李京波
Owner GUANGDONG UNIV OF TECH
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