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Preparation of three-dimensional conductive framework and application of three-dimensional conductive framework in ferric oxide photo-anode

A skeleton, three-dimensional technology, applied in the preparation of three-dimensional conductive skeleton, the application field of iron oxide photoanode, can solve the problems of low economic benefit, unsuitable for industrialization, high equipment requirements, etc., to increase the specific surface area, facilitate industrialization, and prepare methods simple effect

Active Publication Date: 2021-12-10
CHANGZHOU VOCATIONAL INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the chemical vapor deposition and atomic layer deposition used in this system have high equipment requirements, low economic benefits, and are not suitable for industrialization.
In 2020, Li et al. (Li C, Wang D, Suzuki N, et al. A coral-like hematitephotoanode on a macroporous SnO2: Sb substrate for enhanced photoelectrochemical water oxidation[J]. Electrochimica Acta, 2020:137012.) reported the growth of iron oxide photoanodes on macroporous Sb-doped SnO2 substrates by template method, which has excellent photoelectrochemical properties, but the conductive substrates in this technology have large Pore ​​structure, compared with the three-dimensional structure of the conductive substrate, there is still a certain gap

Method used

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  • Preparation of three-dimensional conductive framework and application of three-dimensional conductive framework in ferric oxide photo-anode
  • Preparation of three-dimensional conductive framework and application of three-dimensional conductive framework in ferric oxide photo-anode
  • Preparation of three-dimensional conductive framework and application of three-dimensional conductive framework in ferric oxide photo-anode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] In this example, after FTO is prepared by the method described in the present invention to obtain a three-dimensional conductive framework, the process of preparing an iron oxide photoanode through in-situ growth and the photoelectric performance test specifically include:

[0047] (1) Add 1.2mL ethanol, 0.8mL n-butanol and 0.025g sodium chloride to 0.5mL polystyrene (PS) microsphere solution with a mass concentration of 5%, the diameter of PS microspheres is 500nm, and then ultrasonically mix for 15min , to form solution A1; 1.2mL ethanol, 0.8mL n-butanol and 0.025g sodium chloride are added to 0.5mL mass concentration of 5% polystyrene (PS) microsphere solution, PS microsphere diameter is 300nm, then ultrasonic Mix for 15 minutes to form solution A2; add 40 mL of deionized water to a watch glass with a diameter of 10 cm, then add dropwise 6 uL of 3% sodium lauryl sulfate solution and stir evenly to form solution B.

[0048] (2) Draw 0.1mL of solution A1 and drop it on...

Embodiment 2

[0055] In this example, after FTO is prepared by the method described in the present invention to obtain a three-dimensional conductive framework, the process of preparing an iron oxide photoanode through in-situ growth and the photoelectric performance test specifically include:

[0056] (1) Add 1.2mL of ethanol, 0.8mL of n-butanol and 0.025g of sodium chloride into 0.5mL of polystyrene (PS) microsphere solution with a mass concentration of 5%. The diameter of PS microspheres is 300nm, and then ultrasonically mix for 15min , to form solution A1; 1.2mL ethanol, 0.8mL n-butanol and 0.025g sodium chloride are added to 0.5mL mass concentration of 5% polystyrene (PS) microsphere solution, PS microsphere diameter is 500nm, then ultrasonic Mix for 15 minutes to form solution A2; add 40 mL of deionized water to a watch glass with a diameter of 10 cm, then add dropwise 6 uL of 3% sodium lauryl sulfate solution and stir evenly to form solution B.

[0057] (2) Draw 0.1mL of solution A1 ...

Embodiment 3

[0064] In this example, after FTO is prepared by the method described in the present invention to obtain a three-dimensional conductive framework, the process of preparing an iron oxide photoanode through in-situ growth and the photoelectric performance test specifically include:

[0065] (1) Add 1.2mL of ethanol, 0.8mL of n-butanol and 0.025g of sodium chloride into 0.5mL of polystyrene (PS) microsphere solution with a mass concentration of 5%. The diameter of PS microspheres is 300nm, and then ultrasonically mix for 15min , to form solution A1; 1.2mL ethanol, 0.8mL n-butanol and 0.025g sodium chloride are added to 0.5mL mass concentration of 5% polystyrene (PS) microsphere solution, PS microsphere diameter is 200nm, then ultrasonic Mix for 15 minutes to form solution A2; add 40 mL of deionized water to a watch glass with a diameter of 10 cm, then add dropwise 6 uL of 3% sodium lauryl sulfate solution and stir evenly to form solution B.

[0066] (2) Draw 0.1mL of solution A1 ...

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Abstract

The invention belongs to the technical field of photoelectrochemistry, and provides preparation of a three-dimensional conductive framework and an application of the three-dimensional conductive framework in a ferric oxide photo-anode. The three-dimensional conductive framework is obtained by covering two layers of thin films formed by polystyrene spheres with grain composition on the surface of conductive glass FTO through a physical deposition method, then spin-coating a conductive substrate solution and then sintering. The three-dimensional conductive framework can be used for preparing a ferric oxide photo-anode, namely the three-dimensional conductive framework is used as a substrate to be attached to a ferric oxide semiconductor film. The prepared iron oxide semiconductor film grown on the three-dimensional conductive framework in situ has excellent photoelectric response, and compared with an iron oxide semiconductor film grown on FTO in situ, the starting potential of the iron oxide semiconductor film in situ is shifted by 0.23 mV negatively, and the light current is improved by 8 times and reaches 1.2 mA / cm<2> (1.23 V vs.RHE.). Meanwhile, the whole preparation method is simple, complex preparation equipment is not needed, and industrialization is facilitated.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemistry, and in particular relates to the preparation of a three-dimensional conductive framework and its application in iron oxide photoanodes. Background technique [0002] With the emergence of global warming, energy shortage and environmental pollution, the efficient use of clean solar energy has attracted much attention. Photoelectrochemical (PEC) water splitting to produce hydrogen is more and more favored by researchers as a way to utilize solar energy superior to photovoltaic power generation. The construction of a high-performance photoelectrochemical water splitting hydrogen production system usually requires photocathode and photoanode with high photoactivity and durability, and the development of efficient and stable photoanode is the bottleneck of photoelectrochemical devices. α-Fe 2 o 3 It is the most potential photoanode material, its bandgap width is about 2.1eV, it can ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B1/04C25B1/55
CPCC25B11/04C25B1/04C25B1/55Y02E60/36
Inventor 李龙珠仇志海李兴安陈一凡陈玉伟唐惠东杨蓉丁玉婕
Owner CHANGZHOU VOCATIONAL INST OF ENG
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