The invention discloses a
fluorine-containing cleaning solution with a low
silicon oxynitride
etching rate and for
semiconductor industry use. The cleaning
solution composition contains: a) 0.1%-20% of a
fluoride, b) 0.01%-20% of polyols, c) 5%-75% of water, d) 1%-75% of a
solvent, and e) 0-20% of other additives. The cleaning
solution composition of the invention can effectively clean
plasma etching residues during a
semiconductor manufacturing process, and simultaneously has a low
etching rate to base materials such as low
dielectric materials (SiO2, PETEOS) and some
metal substances (like Ti, Al, Cu) etc., and especially has a low
silicon oxynitride
etching rate. Therefore, the cleaning operation window of
fluorine-containing cleaning solutions can be expanded, the service life of
fluorine-containing cleaning solutions can be further enhanced, and the operation cost of
semiconductor factories can be reduced. Thus, the fluorine-containing cleaning solution provided in the invention boasts good application prospects in microelectronic fields like
semiconductor chip cleaning.