94results about How to "Lower contact barrier" patented technology

The invention discloses a material of a reflecting layer of an electrochromic mirror. The material is characterized in that a used reflecting film is a silver alloy reflecting film, and the work function of the silver alloy is not greater than 4.2eV; a related electrochromic device is manufactured by a negative electrode of an LCD or an LED device or an OLED device, a positive electrode which is glass plated with ITO or transparent conductive film, a frame gel which is epoxy resin, an electrochromic material which is filled in a cavity and UV gel which is dispensed for sealing. The material of the conductive reflecting layer has good performance, higher reflectivity and stability, meanwhile, the material reduces contact potential barrier between the electrode and the electrochromic material, reduces the drive voltage, improves electrochromism efficiency and prolongs the service life of the devices; furthermore, the silver alloy with good performance is taken as the conductive reflecting film to provide the electrochromic device with stable performance.

The invention provides an electro-chromic material. The electro-chromic material comprises an upper glass substrate, a conducting reflective layer, an electro-chromic material, a transparent conducting layer and a lower glass substrate which are stacked in sequence. The material performance of the conducting reflective layer of the electro-chromic material is excellent, the electro-chromic material has high reflectivity and stability, a contact-potential barrier between an electrode and the electro-chromic material is reduced, drive voltage is reduced, the electro-chromic efficiency is improved, and the service life of a device is prolonged. In addition, silver alloy having excellent performance serves as a conducting reflective film, and an electro-chromic device is stable in performance.

The invention discloses a thin-film transistor structure. The thin-film transistor structure comprises a source, a drain, a semiconductor layer and a grid, wherein the drain and the source are arranged at an interval; the grid is arranged in an insulation manner relative to the semiconductor layer, the source and the drain through an insulation layer; an ohmic contact layer is further arranged between the semiconductor layer and the source and the drain, and the ohmic contact layer further comprises a first phosphorus-doped layer, a second phosphorus-doped layer and a third phosphorus-doped layer which are stacked, wherein the first phosphorus-doped layer is close to the semiconductor layer, the third phosphorus-doped layer is close to the source and the drain, the phosphorus doping concentration of the first phosphorus-doped layer is lower than that of the second phosphorus-doped layer, and the phosphorus doping concentration of the second phosphorus-doped layer is lower than that of the third phosphorus-doped layer. The thin-film transistor structure disclosed by the invention can reduce a contact potential barrier between a semiconductor and a metal to form good ohmic contact between the two and further effectively reduce the drain current of the amorphous silicon thin-film transistor without affecting the on-state current.

The invention provides a preparation method and product of a high-performance metal grid transparent conductive film. The metal grid transparent conductive film at least comprises a transparent substrate comprising a first surface and a second surface in opposite arrangement; and a metal grid wire formed by close contact between graphene and metal nanometer particles in-situ growing thereon, wherein the metal grid wire is directly or / and indirectly arranged on the first surface or / and the second surface of the transparent substrate. The prepared metal grid solves the problems of unbendable conventional metal grids, visible metal grids, metal migration and the like. The preparation method is simple, thereby facilitating large-scale production.

The invention discloses a production method of an ohmic contact of a semi-insulated SiC semiconductor device, which is mainly used for solving the problem that the ohmic contact is greater than contact resistance. The process is as follows: a SiC substrate is carried out the pretreatment, a GaN heavily doped layer or a SiC: Ge transition layer is outward extended on the SiC substrate; an ohmic contact region is determined on the GaN heavily doped layer or the SiC: Ge transition layer, and the GaN heavily doped layer or the SiC: Ge transition layer region in the ohmic contact region is carried out the KOH etching, thus allowing the SiC substrate in a channel region to be a Si surface; a layer of SiN materials with high dielectric constant is deposited on the ohmic contact region and the Si surface of the channel region; the SiN materials on the ohmic contact region are removed by etching, a metal is deposited on the region and an electrode is led out. The production method has the advantages that the ohmic contact is lower than the contact resistance and a sheet resistance, the service life is long and the production method can be used for the production of the ohmic contact of the semi-insulated SiC semiconductor device.

The invention, which belongs to the organic semiconductor thin-film solar battery field, discloses a solar cell based on a nano-onion-carbon composite anode buffer layer. On the basis of an ortho type structure, the solar cell comprises a substrate (1), a transparent conductive anode ITO (2), a composite anode buffer layer (3), an optical active layer (4), a cathode buffer layer (5), and a metal cathode (6), wherein the layers are arranged successively from bottom to top. The composite anode buffer layer is formed based on compounding of a conductive polymer PEDOT:PSS, a micromolecule material F4-TCNQ, and a nano onion carbon material. The conductive polymer PEDOT:PSS is doped with the micromolecule material F4-TCN with a certain proportion and a high-conductivity nano onion carbon material, so that the photoelectric conversion efficiency of the device is improved, the air stability of the organic thin-film solar cell is enhanced, and the service life is prolonged.

The invention relates to a solar cell device which comprises a conductive substrate, a doping active layer, an electron injection layer formed on the doping active layer and a cathode formed on the electron injection layer. The doping active layer is formed between the conductive substrate and the electron injection layer, and is formed by at least one selected from the group consisting of P3HT / PCBM, P3AT / PCBM, MDMO-PPV / PCBM, and MEH-PPV / PCBM doped with phthalocyanines dye micromolecule, and the cathode is formed on the electron injection layer. The solar device has relatively high photocurrent density and light absorption efficiency. In addition, a manufacturing method of the solar cell device is also provided.

The invention discloses a method for preparing an organic electroluminescent device. The method comprises the following steps: firstly, a cationic surface active agent and a soluble ionogenic conductive polymer are assembled on the gas-liquid interface, then the laminar sequential nano structure of the conductive polymer / the surface active agent is transferred to an anode layer by the LB method to be used as the hole injection layer of the device, and then the preparation of other functional layers and an electrode film of the device is performed. Because of very good sequential laminar structure, the hole injection layer material ensures that the contact potential barrier between a hole transport layer and the anode layer is reduced, and the hole injection efficiency is enhanced. The invention can be used for the preparation of big area polymer hole injection layers to produce organic electroluminescent devices with high qualities.

The invention discloses a bottom electrode type flexible perovskite solar cell and a preparation method thereof. The bottom electrode type flexible perovskite solar cell comprises a forward structureand a backward structure; the forward structure comprises a flexible substrate, a bottom electrode, an electron transport layer, a perovskite layer, a hole transport layer and an electrode from the bottom up in sequence; the backward comprises a flexible substrate, a bottom electrode, a hole transport layer, a perovskite layer, an electron transport layer and an electrode from the bottom up in sequence; and the bottom electrode layer adopts a metal nanomaterial and / or a conductive polymer material. On one hand, by virtue of setting of the bottom electrode, the flexibility and bendable propertyof the flexible perovskite solar cell can be improved to a certain degree, so the number of times of bending of the flexible perovskite solar cell can be increased, and a new approach is provided forpracticability of the flexible perovskite solar cell; and on the other hand, by virtue of addition of the bottom electrodes, the contact barrier between the bottom electrodes and the electron transport layer can be lowered, the series resistance is lowered, the filling factor and the current density are improved, the energy conversion efficiency is improved effectively, and feasibility is provided for commercialization of the flexible perovskite solar cell is provided.

The invention belongs to the field of photoelectric devices, and discloses an alloy electrode capable of improving the efficiency and the stability of a solar cell. The alloy electrode is a binary or complex alloy electrode formed in the mode that precious metal silver is combined with metal such as aluminum, titanium, zinc, copper and / or magnesium. The invention further discloses the solar cell with the alloy electrode serving as the cathode or the anode of the cell. By means of the alloy electrode and the solar cell, matching between the energy level of the alloy electrode and the energy level of a carrier transport layer is easily improved, the contact barrier is reduced, and the efficiency of the cell is improved; silver atoms in the alloy electrode are slowly diffused to the carrier transport layer and an optical active layer, and therefore the stability of the cell can be improved; the use amount of silver materials in a unit area of the cell is decreased, the cost of the cell is easily controlled, and resources are saved.

The invention discloses a method for producing an organic electroluminescence device. The method comprises the followings steps: frirstly, conducting polymer or conducting polymer nano-particle composite materials are formed on the anode of a device, and are used as the hole injection layers of the device; and secondly, other functional layers and membrane electrodes of the device are produced. The conducting polymers in the hole injection layers include conducting polymers and nano-particles thereof, and the device has the characteristics of high electrical conductivity and good membrane planeness. The method can not only be used for producing the organic electroluminescence device with the advantages of high luminous efficiency and long service life, but also can be applied to the fields of backlights, luminance light panels, and the like for color LED display.

The invention belongs to the field of electroluminescence devices and discloses an organic electroluminescence device and preparation method thereof. The organic electroluminescence device comprises an anode substrate, a hole injection layer, a hole transport layer, an electron barrier layer, a luminescent layer, a buffer layer and a cathode layer, wherein the anode substrate, the hole injection layer, the hole transport layer, the electron barrier layer, the luminescent layer, the buffer layer and the cathode layer are sequentially laminated. The material of the buffer layer is metal fluoride. By arranging the buffer layer between cathodes and the luminescent layer, permeation on the luminescent layer from the cathodes can be effectively avoided, and transmission performance of electrons is protected. Meanwhile, fluorine in the buffer layer can form bonding effect with material of the cathode layer so that Fermi level of the buffer layer and the cathode layer can be reduced to the same level, the band of the buffer layer can be bent, contact potential barriers of the luminescent layer and the cathode layer can be effectively reduced, energy needing to be overcome when the electrons are transmitted to the luminescent layer is reduced, transmission capacity of the electrons in the organic electroluminescence device is improved, and therefore luminous efficiency of the organic electroluminescence device is achieved.

The invention discloses a manufacturing method for a GaN (gallium nitride) based LED (light emitting diode) with a low series resistance and a good p type ohmic contact. The manufacturing method comprises the following steps: 1) providing a GaN based LED epitaxial wafer; 2) cleaning and drying the GaN based LED epitaxial wafer; 3) depositing a gallium vacancy induction layer on a p-GaN surface of the epitaxial wafer; 4) annealing the GaN based LED epitaxial wafer; 5) removing the gallium vacancy induction layer from the surface of the GaN based LED epitaxial wafer; 6) manufacturing a p type ohmic contact layer and electrodes P and N on the treated GaN based LED epitaxial wafer; and 7) dividing the GaN based LED epitaxial wafer into LED chip particles.

The invention discloses a low-on-resistance trench silicon carbide power device and a manufacturing method thereof. The cellular structure comprises an N-type substrate, an N-type epitaxial layer anda trench; a graphene layer is arranged on the side wall of the trench; a gate oxide layer and a polycrystalline silicon gate are arranged in the trench; a passivation layer is arranged above the polycrystalline silicon gate; a P-type body region, an N-type source region and a P-type body contact region are arranged on the two sides of the trench; a P-type shielding layer is arranged below the graphene layer; source metal is arranged on the upper surface of the source region; and drain metal is arranged on the lower surface of the substrate. According to the power device, an electron beam method is used, metal and a carbon source gas are used for assisting, and the graphene layer grows on the side wall of the trench. The power device is characterized in that the graphene layer on the side wall of the trench reduces the on resistance. The shielding layer below the graphene layer shields the current flowing through the graphene layer when the device is in an off state, and the turn-off characteristic of the device is improved. The growth of the graphene layer is assisted by metal nickel and the carbon source gas, so that the uniformity, the thickness and the growth rate of the graphene layer are improved.

The invention relates to the display technology field, in particular to a thin film transistor and a manufacturing method thereof as well as an array substrate and a display device. The thin film transistor comprises an active layer (3), a doping layer (2) and a source / drain electrode layer (1), wherein the doping layer (2) is located between the active layer (3) and the source / drain electrode layer (1) and comprises at least two sub-doping layers, the doping concentration of dopant of the source / drain electrode sub-doping layer (4) close to the source / drain electrode layer (1) is larger than that of the dopant of an active sub-doping layer (5) close to the active layer (3), and the doping concentration of dopant of the active sub-doping layer (5) is larger than 0. According to the thin film transistor and the manufacturing method thereof as well as the array substrate and the display device, the technical problem that the contact resistance between the doping layer and the source / drain electrode layer and the contact resistance between the doping layer and the active layer cannot be reduced simultaneously in the prior art is solved, and the thin film transistor and the manufacturing method thereof as well as the array substrate and the display device can be applied to the display technology field.

The invention provides a preparation method of a laminated transparent conducting layer LED (light emitting diode) chip structure and the laminated transparent conducting layer chip structure. The preparation method comprises the following steps of: 10), providing an LED epitaxial wafer; 20) carrying out Mesa treatment on the LED epitaxial wafer, so that a N-GaN layer of the epitaxial wafer can be exposed; 30) depositing a first transparent electric layer with high work function on the unexposed surface of the epitaxial wafer; 40) depositing a second transparent electric layer on the first transparent electric layer; and 50) plating a P electrode and an N electrode in an evaporation way, so as to an LED COW structure. According to the preparation method, a layer of new film layer with high work function is inserted between a transparent electric film layer film and a P-GaN, so that the contact-potential barrier between the transparent electric film layer film and the P-GaN can be reduced, the driving voltage of the chip can be reduced, and the LED external quantum efficiency can be guaranteed since the refractive index of the inserting layer is between refractive indexes of an ITO (indium tin oxide) film layer and the P-GaN or is equal to the refractive index of the transparent electric film layer arranged above the inserting layer.

The invention relates to a transparent conductive cathode contact structure used on n-type silicon, which is basically characterized in that a LiF layer (2) is positioned on the n-type silicon (1), and then a transparent conductive electrode (3) is positioned on the Lif layer (2). The Lif layer (2) can reduce the contact potential barrier between the n-type silicon (1) and the transparent conductive electrode (3) to improve the collection or injection efficiency of electrons.

The invention discloses a cathode modification type plane perovskite solar cell and a preparation method thereof, and belongs to the technical field of a plane perovskite solar cell. Key points of the technical scheme are in that the cathode modification type plane perovskite solar cell successively comprises a substrate, an anode modification layer, a perovskite layer, an electron transmission layer, a cathode modification layer and a cathode layer from bottom to top, and the material of the cathode modification layer is cesium carbonate or molybdenum trioxide doped cesium carbonate. The invention further discloses a preparation method of the cathode modification type plane perovskite solar cell. The cesium carbonate or the molybdenum trioxide doped cesium carbonate is adopted to be taken as the cathode modification layer, a contact potential barrier between a cathode and the electron transmission layer is reduced to some extent, series resistance is reduced, a filling factor and an open-circuit voltage are improved to a great extent, and energy conversion efficiency is effectively improved.

The invention belongs to the technical field of micro-nano electronics, and discloses a two-dimensional material field effect transistor with a transverse structure, and a preparation method and an application thereof; the two-dimensional material field effect transistor sequentially comprises a substrate, a dielectric layer, a metal electrode and a two-dimensional material from bottom to top, wherein the two-dimensional material is a metal sulfide or a metal selenide; the middle part of the metal is made to form the two-dimensional material through a vulcanization method or a selenization method, so that covalent bonds are formed between the two-dimensional material and the metal electrode, and ohmic contact is effectively formed. The preparation method of the transverse structure two-dimensional material field effect transistor has the advantages of simplicity in operation, few process steps and high efficiency, ohmic contact is effectively formed, the contact barrier between the two-dimensional material and the metal electrode is reduced, and the electrical property of the device is improved.

The invention discloses an organic light-emitting diode display panel and a preparation method thereof. The organic light-emitting diode display panel includes: a backboard; the plurality of metal wiring layers are arranged on the backboard; the passivation layer is arranged on the metal wiring layer and the backboard; the planarization layer is arranged on the passivation layer; the plurality offirst electrode layers are arranged on the planarization layer and are electrically connected with the metal wiring layer through first via holes; the plurality of pixel definition layers are arrangedon the first electrode layer; wherein each two adjacent pixel definition layers are respectively defined with an organic light-emitting diode device region or an auxiliary cathode contact hole region, and the organic light-emitting diode device regions and the auxiliary cathode contact hole regions are arranged at intervals; the auxiliary cathode contact hole region includes an electrode modification layer disposed on the first electrode layer. By arranging the electrode modification layer, the voltage drop is reduced, and the brightness uniformity of the panel is improved.

The present invention provides a MOS pipe and a preparation method thereof. The preparation method comprises: forming a metal grid figure on a LTPS (Low Temperature Poly-silicon) glass substrate; taking the metal grid as a mask to perform high doping ion implantation, and forming a source region and a drain region; and performing first etching of the metal grid to form lighting doping regions in the source region and the drain region. The preparation method of the MOS pipe, after the high doping ion implantation is performed, a technology of etching the metal grid is added to automatically form light doping regions in the source region and the drain region so as to effectively inhibit leakage current, further reduce the contact barriers of the metal and the semiconductor to some extent, and reduce the contact resistances of the source metal, the drain metal and the polycrystalline silicon. The MOS pipe and the preparation method thereof can effectively inhibit the leakage current with no need for increasing extra mark plates and reduce the realization difficulty so as to reduce the production cost and shorten the production time.

The invention relates to a piece of conducting glass and a preparation method thereof. The conducting glass comprises a transparent glass base. The conducting glass further comprises an impurity stopping layer and a conducting functional layer which are sequentially overlapped on the transparent glass base, wherein the impurity stopping layer is formed by a metal oxide layer and a monox layer which are overlapped, or a mixture layer of the metal oxide layer and the monox layer. According to the conducting glass, the impurity stopping layer can be used for preventing the situation that sodion spreads and enters a tin oxide film to generate fog on the film and cause the reduction of the chemical properties of the film, so that resistance can be reduced while high optical transmittance can be ensured; and when the conducting glass serves as a transparent conducting electrode of a photoelectric device, a contact-potential barrier can be provided, and thereby, the loss of the impedance of the device can be reduced.

The invention discloses an organic solar cell adopting functionalized graphene quantum dots as an electron transport layer. The cell includes a cathode layer, an electron transport layer, a photoactive layer, a hole transport layer and an anode layer which are in mutual superposition, and a glass substrate; the cathode layer or the anode layer are prepared on the glass substrate; and the electrontransport layer between the cathode layer and the photoactive layer is functionalized graphene quantum dots. Chemical modification treatment can be performed on the graphene quantum dots, and the workcontent of the graphene quantum dots can be adjusted, so that a contact barrier between the active layer and an electrode can be reduced, the collection efficiency of the electrode for photogeneratedcarriers in the cell can be enhanced, and therefore, the graphene quantum dots can be suitable for being the electron transport layer of the cell, and the photoelectric conversion efficiency of the cell can be significantly enhanced while costs are reduced.

The invention relates to an Ag(Ti,Zr) / rare earth crystalline silicon solar cell composite sizing agent and a manufacturing method of the Ag(Ti,Zr) / rare earth crystalline silicon solar cell composite sizing agent. The Ag(Ti,Zr) / rare earth crystalline silicon solar cell composite sizing agent comprises, by mass, 0.1-0.4 parts of glass binders, 7.5-8 parts of ultra-fine silver powder, 0.2-0.5 parts of mixtures of ultra-fine TiO2 powder and ultra-fine ZrO2 powder, 0.1 parts of rare earth powder, 1-1.4 parts of organic binders and 0.3-0.4 parts of diluents. By means of the Ag(Ti,Zr) / rare earth crystalline silicon solar cell composite sizing agent and the manufacturing method, a small amount of rare earth addition Ce, Eu or Gd is doped into the sizing agent containing Ti and Zr, the rare earth is a medium for forming Ag / Si contact, the silver-silicon contact in the sintering process of cell manufacturing is compact, and the contact resistance and the electrode attachment force are further reduced. Meanwhile, the contact resistance between silk screen printing silver paste and a silicon substrate is reduced, the electrode attachment force is improved, consumption of metal silver is reduced, the crystalline silicon solar cell efficiency is improved, and the cell cost is reduced.

The present invention discloses an outdoor parking management system with a self-generating function. The parking management system utilizes a polymer solar cell to realize the self-generating function, and the polymer solar cell has a sandwich structure composed of an anode electrode, an organic active layer and a cathode electrode. The anode electrode comprises, orderly from outside to inside, an ITO glass, a WOx thin film, a WOx nano wire thin film and a PEDOT: PSS buffer layer, the organic active layer is located between the anode electrode and the cathode electrode, and the cathode electrode comprises, orderly from outside to inside, a Ti piece, an AL film, a TiO2 thin film. The parking management system realizes a self-energy supply function, is high in energy conversion efficiency, good in stability and longer in circulation working time and service life, enables the dependence on the electric energy of a power grid to be reduced substantially, and saves the electric energy of the power grid effectively.

The invention belongs to the technical field of micro-electronics, and particularly relates to a method for realizing Fermi level de-pinning on the surface of a germanium substrate in metal- germanium contact. Germanium devices become current focuses for the advantages of high carrier mobility, realization of low equivalent oxidation layer thickness, high compatibility with existing processes and the like, but the serious surface Fermi level pinning effect of germanium is one of the problems which restrain the preparation of high-performance germanium-based N-type metal-oxide semiconductor (MOS) devices. According to the method for realizing Fermi level de-pinning on the surface of the germanium substrate in metal-germanium contact, a GeOxNy (x=0.92, y=0.08) medium layer is formed on the surface through the method of treating the germanium substrate with ammonia (NH3) plasma, so that the de-pinning effect is successfully realized; and in addition, due to the deviation of a smaller amount of energy of GeON and Ge, a prepared metal / GeON / Ge sample has lower contact resistance, and thus has higher application value.

The invention discloses a production method of an ohmic contact of a semi-insulated SiC semiconductor device, which is mainly used for solving the problem that the ohmic contact is greater than contact resistance. The process is as follows: a SiC substrate is carried out the pretreatment, a GaN heavily doped layer or a SiC: Ge transition layer is outward extended on the SiC substrate; an ohmic contact region is determined on the GaN heavily doped layer or the SiC: Ge transition layer, and the GaN heavily doped layer or the SiC: Ge transition layer region in the ohmic contact region is carried out the KOH etching, thus allowing the SiC substrate in a channel region to be a Si surface; a layer of SiN materials with high dielectric constant is deposited on the ohmic contact region and the Si surface of the channel region; the SiN materials on the ohmic contact region are removed by etching, a metal is deposited on the region and an electrode is led out. The production method has the advantages that the ohmic contact is lower than the contact resistance and a sheet resistance, the service life is long and the production method can be used for the production of the ohmic contact of the semi-insulated SiC semiconductor device.

The invention relates to preparation of a passivation tunneling layer material and an application thereof in a solar cell. Specifically, the invention discloses an application of a carrier passivationtunneling film used for preparing a solar cell, wherein the film contains tantalum pentaoxide (Ta2O5). The invention further provides a carrier transport structure used for preparing a solar cell anda preparation method thereof. The carrier passivation tunneling film provided by the invention overcomes defects of silicon oxide serving as a passivation tunneling layer on the aspect of the application of a passivation contact heterojunction cell.

The invention provides composite nano particles. The composite nano particles comprise metal oxide nano particles and metal nano particles which are combined with each other, wherein halide anions arecombined on the surfaces of the metal oxide nano particles; the surfaces of the metal nano particles are combined with an electric-positive surface modifying agent; and the metal oxide nano particlesand the metal nano particles are combined with each other through an adsorption effect between the halide anions and the electric-positive surface modifying agent.