The invention provides
infrared absorption doped
silicon and a preparation method thereof. The preparation method involved in the invention is characterized by including the following steps of: step 1, adopting a TRIM program to simulate the
ion distribution of different types of
ion-implanted
silicon wafers, wherein the simulated
ion species are selected from B+, P+, As+, Si+, or / and Ar+, He+, H+, Kr+, Xe+; during the
simulation, the energy is set to 10-1000keV, and the
simulation dose is 1014-1018ions / cm2; the target of
simulation is that: after the
silicon wafers are implanted, the
ion distribution can enter the silicon body from the silicon surface, the depth distribution ranges from 2nm to 1000nm, and the
transmittance of the silicon wafers after
doping ions is 0; and step 2, performing ultrasonic cleaning on
monocrystalline silicon wafers, and then
drying with an air gun; step 3, performing
ion implantation on the
monocrystalline silicon wafers based on a simulation result; and step 4, performing thermal annealing to obtain the
infrared absorption doped silicon.