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QLED device and preparation method thereof

A device and thin film technology, applied in the field of QLED devices and their preparation, can solve the problems of short service life of QLED devices, and achieve the effects of increasing nickel vacancies, increasing hole extraction efficiency, conductivity, and good effect.

Pending Publication Date: 2021-12-28
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The application provides a QLED device and a preparation method thereof, which can solve the problem of short service life of QLED devices containing PEDOT:PSS materials

Method used

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  • QLED device and preparation method thereof
  • QLED device and preparation method thereof

Examples

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preparation example Construction

[0037] The present application also provides a preparation method of the above-mentioned QLED device preparation method, which includes the following steps:

[0038] S1. Coating the rubidium-doped nickel oxide precursor solution on the side of the anode away from the substrate, at 270-310°C, such as 270°C, 275°C, 280°C, 285°C, 290°C, 295°C, 300°C, 305°C or 310°C isothermal annealing for 15-25min to form a rubidium-doped nickel oxide film.

[0039] Wherein, the rubidium-doped nickel oxide precursor solution is prepared by the following method:

[0040] Dissolving rubidium acetate and nickel acetate tetrahydrate in an organic solvent and stirring at room temperature for 10-14 hours; wherein, the organic solvent includes ethylene glycol solution containing diethylamine. By annealing at 270-310° C. for 15-25 minutes, the organic solvent can be effectively removed and a rubidium-doped nickel oxide film can be formed. Wherein, the ratio of rubidium acetate and nickel acetate tetra...

Embodiment 1

[0053] A kind of QLED device, its structure is as figure 1 As shown, it is prepared by the following preparation method:

[0054] Step S1: ultrasonically clean the ITO glass substrate in deionized water, acetone and isopropanol for 15 minutes, and then use a UV-ozone cleaner for 15 minutes;

[0055] Step S2: Dissolve 0.3g of nickel acetate tetrahydrate and 28mg of rubidium acetate in 10g of ethylene glycol solution containing 0.1g of diethylamine, and stir at room temperature to synthesize a Rb:NiO solution with an Rb doping amount of 10% mol.

[0056] On the ITO film on the ITO glass substrate, spin-coat NiO:Rb solution at 3000rpm for 40s, and anneal at 300°C for 20min to form a rubidium-doped nickel oxide film with a thickness of 30nm; then spin-coat PEDOT:PSS aqueous solution at 5000rpm for 40s , annealed at 150° C. for 15 minutes in air to form a PEDOT:PSS film with a thickness of 40 nm, and the rubidium-doped nickel oxide film and the PEDOT:PSS film together form a compo...

Embodiment 2

[0065] It differs from Example 1 only in step S2: dissolving nickel acetate tetrahydrate and rubidium acetate in a certain proportion in an ethylene glycol solution containing diethylamine, stirring overnight at room temperature, and preparing a synthetic Rb with a doping amount of 8% mol of Rb: NiO solution as a hole injection layer.

[0066] The final structure of the QLED device of Example 2 is: ITO / NiO:Rb(8%) / PEDOT:PSS / TFB / R-QD / ZnO / Ag device.

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Abstract

The invention discloses a QLED device and a preparation method thereof, and belongs to the field of QLED devices. The QLED device comprises a substrate, an anode and a composite hole injection layer which are sequentially stacked, wherein the composite hole injection layer comprises a rubidium-doped nickel oxide thin film and a PEDOT:PSS thin film which are alternately stacked, the composite hole injection layer is provided with a first surface connected with the anode and a second surface far away from the anode, the layer where the first surface is located is the rubidium-doped nickel oxide thin film, and the layer where the second surface is located is the PEDOT:PSS thin film. By the adoption of the composite hole injection layer, PEDOT:PSS can be prevented from corroding the anode, the stability of interface contact between the composite hole injection layer and the ITO glass substrate is kept, the energy level of the composite hole injection layer and the energy level of the quantum dot light-emitting layer are more adaptive, the hole extraction and injection efficiency can be improved, and therefore carriers are balanced, the performance of a device is improved, and the service life of the QLED device is finally prolonged.

Description

technical field [0001] The present application relates to the field of QLED devices, in particular, to a QLED device and a preparation method thereof. Background technique [0002] QLED is a sandwich structure composed of quantum dot (QD) light-emitting layer, carrier transport layer and electrode layer. Its principle is electroluminescence, that is, electrons and holes are injected from the electrodes on both sides of the device, and then reach the QD after crossing multiple interfaces. Radiative recombination after the emissive layer. Device stability and working life are still the key issues facing the commercial application of QLEDs. [0003] PEDOT:PSS (poly 3,4-ethylenedioxythiophene / polystyrene sulfonate) is currently widely used as a material with a hole injection layer. It has outstanding advantages such as solution processing. In actual use, it is found that PEDOT:PSS Most of the QLED devices have different injection and transport efficiencies of the hole layer an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/12H10K50/115H10K50/17H10K71/00
Inventor 杨紫琰龙能文管子豪
Owner 合肥福纳科技有限公司
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