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Infrared absorption doped silicon and preparation method thereof

A technology of infrared absorption and doping of silicon, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc. It can solve the problems of limitation, narrow detection band, and high light transmittance, so as to repair lattice damage and reduce The effect of light reflection, enhanced light absorption

Active Publication Date: 2019-06-18
WUHAN UNIV
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Problems solved by technology

[0004] However, since the band gap of silicon is about 1.2eV, the maximum wavelength that can absorb photons does not exceed 1100nm, and the light transmittance in the medium and long infrared band is extremely high, so that the manufactured silicon-based infrared detection devices are mainly concentrated in the near infrared band. And the detection band is narrow, and the application in the medium and long infrared band is also limited

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  • Infrared absorption doped silicon and preparation method thereof
  • Infrared absorption doped silicon and preparation method thereof

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Embodiment 2

[0027] Step 1. Use the TRIM program to simulate the ion distribution of different kinds of ions implanted into a single crystal silicon wafer. The ions simulated in this embodiment have B + ,P + 、As + 、Si + , the simulated energy is 10~500keV, and the simulated dose is 10 14 ~10 18 ions / cm 2 .

[0028] Step 2. Select the purchased four-inch monocrystalline silicon wafer, ultrasonically clean it with acetone, ethanol, and deionized water for 10 minutes, and then dry it with a nitrogen gun for later use.

[0029] Step 3. Paste the cleaned silicon wafer on the copper plate with high-temperature conductive adhesive, send it into the ion implantation chamber, and evacuate the ion implanter. The molecular pump pumps until the background vacuum is 10-4 During Pa, ion implantation experiments are carried out; based on the simulation results in step 1, the implanted ions selected in this embodiment are B + ,P + 、As + 、Si + , can increase interstitial sites, vacancies, boron io...

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Abstract

The invention provides infrared absorption doped silicon and a preparation method thereof. The preparation method involved in the invention is characterized by including the following steps of: step 1, adopting a TRIM program to simulate the ion distribution of different types of ion-implanted silicon wafers, wherein the simulated ion species are selected from B+, P+, As+, Si+, or / and Ar+, He+, H+, Kr+, Xe+; during the simulation, the energy is set to 10-1000keV, and the simulation dose is 1014-1018ions / cm2; the target of simulation is that: after the silicon wafers are implanted, the ion distribution can enter the silicon body from the silicon surface, the depth distribution ranges from 2nm to 1000nm, and the transmittance of the silicon wafers after doping ions is 0; and step 2, performing ultrasonic cleaning on monocrystalline silicon wafers, and then drying with an air gun; step 3, performing ion implantation on the monocrystalline silicon wafers based on a simulation result; and step 4, performing thermal annealing to obtain the infrared absorption doped silicon.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics, and in particular relates to an infrared absorbing doped silicon and a preparation method thereof. technical background [0002] Infrared detectors are an urgent and major demand of the country, and play an important role in space early warning and detection, all-weather information perception and national economy. Traditional mercury cadmium telluride (MCT) infrared detection devices are relatively mature, but the stability and uniformity of MCT materials are poor. In addition, the AlGaAs / GaAs multi-quantum well infrared detector (QWIP) with excellent uniformity cannot be excited under vertical light irradiation, and it is difficult to integrate with silicon. [0003] Modern science and technology also require wide spectrum, high efficiency, low price and good stability detection devices in more fields. The first-generation silicon-based semiconductor materials are cheap, have good...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/324H01L29/167
Inventor 刘昌李慧张恒张定波吴昊
Owner WUHAN UNIV
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