An
interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an
intermetallic compound of aluminum and / or having a higher
standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having
low resistance, such an Al
interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO
electrode. The
interconnector line of thin film can be obtained by
sputtering in a dust-free manner by using a sputter target having a similar composition.