1662 results about "Solder material" patented technology

Photovoltaic modules comprising back-contact solar cells manufactured using monolithic module assembly techniques comprising a flexible circuit comprising a back sheet and a patterned metallization. The module may comprise busses in electrical contact with the patterned metallization to extract the current. The module may alternatively comprise multilevel metallizations. Interlayer dielectric comprising islands or dots relieves stresses due to thermal mismatch. The use of multiple cord plates enables flexible circuit layouts, thus optimizing the module. The modules preferably comprise a thermoplastic encapsulant and / or hybrid adhesive / solder materials. An ultrathin moisture barrier enables roll-to-roll processing.

A semiconductor device with a sheet-like insulating substrate (101) integral with two or more patterned layers of conductive lines and vias, a chip attached to an assembly site, and contact pads (103) in pad locations has an encapsulated region on the top surface of the substrate, extending to the edge of the substrate, enclosing the chip, and having contact apertures (703) at the pad locations for external communication with the pad metal surfaces. The apertures may have not-smooth sidewall surfaces and may be filled with solder material (704) to contact the pads. Metal-filled surface grooves (710) in the encapsulated region, with smooth groove bottom and sidewalls, are selected to serve as customized routing interconnections, or redistribution lines, between selected apertures and thus to facilitate the coupling with another semiconductor device to form a package-on-package assembly.

A light-emitting device includes a light emitting portion comprising a substrate having a mounting surface for mounting a LED element and a metal portion formed on a surface of the substrate opposite to the mounting surface, the substrate comprising ceramic or a semiconductor and the metal portion being bondable to a solder material and a heat dissipating member comprising aluminum, aluminum alloy, magnesium or magnesium alloy, and having, on a surface thereof, a junction treated so as to be bondable to the solder material and a heat dissipating film formed in a periphery of the junction, wherein the metal portion of the light emitting portion is bonded to the junction of the heat dissipating member by the solder material.

A circuit component and method by which degradation of a solder connection by electromigration can be prevented or reduced. The component generally includes an interconnect pad on a surface of the component, a metallic multilayer structure overlying the interconnect pad and having a solderable surface layer, and a solder material on the multilayer structure. According to a preferred aspect of the component and method, a stud is wire-bonded to the solderable surface layer of the multilayer structure and encased by the solder material to provide a low electrical resistance path through the solder material.

A semiconductor package includes a wiring board; a first electrode for external connection; a ball pad; a semiconductor chip; a mold resin; an electrode unit connected with the ball pad and penetrating the mold resin; and a second electrode for external connection connected with a portion of the electrode unit on a side of an outer surface of the mold resin. The electrode unit includes a first ball disposed on the ball pad; a second ball disposed between the first ball and the second electrode; and a solder material connecting between the ball pad and the first ball, between the first ball and the second ball, and between the second ball and the second electrode for external connection; each of the first ball and the second ball including a core part having a glass transition temperature which is higher than a melting point of the solder material.

A bump structure of a semiconductor package and a method for fabricating the same are provided. The bump structure is used to connect a semiconductor element to a carrier of the semiconductor package. The fabrication method primarily employs an electroplating process to form the bump structure including an under bump metallurgy (UBM) layer, at least one I-shaped conductive pillar, and a solder material. This allows fine-pitch electrical connection pads to be arranged in the semiconductor package, and also provides an enhanced support structure and a sufficient height between the semiconductor element and the carrier.

A modularized probe head for modularly assembling on a probe card is configured for probing a semiconductor wafer under test. The probe head includes a silicon substrate having an active surface and an opposing back surface. The back surface of the silicon substrate is attached on a holder. The silicon substrate has a plurality of peripheral bond pads and contact pads on its active surface. At least a probing chip is mounted on the active surface of the silicon substrate. The probing chip has probing tips and side electrodes. The side electrodes are connected with the contact pads by means of solder material. The peripheral bonding pads of the silicon substrate are connected with a flexible printed circuit for electrically connecting to a multi-layer printed circuit board of a probe card.

An object of the invention is to provide an effective cooling-energy storing performance and a stable cooling-energy radiating performance and to realize a high productivity. An evaporator has a plurality of refrigerant tubes arranged at almost equal intervals to form therebetween accommodating spaces. A plurality of cooling-storage containers are arranged in some of the accommodating spaces and fins are arranged in the remaining accommodating spaces. A cooling-storage unit is formed by one cooling-storage container and two refrigerant tubes arranged at both sides of the cooling-storage container. Each of the cooling-storage container has projections extending from one wall portion to the other wall portion to form heat exchange portions. The cooling-storage container is connected to the refrigerant tubes by soldering material.

When a friction stir weld tool penetrates the interface of two workpieces of dissimilar metal alloy materials, the resultant weld of the different alloy materials may produce a weak weld joint. Such weak joints are often experienced, for example, when attempting to form spot welds or other friction stir welds between a magnesium alloy sheet or strip and an aluminum alloy sheet or strip. It is discovered that suitable coating compositions including an adhesive placed at the interface of assembled workpieces can alter the composition of the friction stir weld material and strengthen the resulting bond. In the example of friction stir welds between magnesium alloy and aluminum alloy workpieces, it is found that combinations of an adhesive with copper, tin, zinc, and / or other powders can strengthen the magnesium-containing and aluminum-containing friction stir weld material.

Methods for forming an improved bump structure on a semiconductor device are provided. In one embodiment, a substrate is provided having at least one contact pad formed thereon. A first passivation layer is formed over the substrate, the first passivation layer having at least one opening therein exposing a portion of the contact pad. A first patterned and etched conductive metal layer is formed on the contact pad and above a portion of the first passivation layer. A second patterned and etched passivation layer is formed above the first passivation layer and a portion of the first conductive metal layer, wherein a portion of the ends of the first conductive metal layer is wedged between the first and second passivation layers. A second conductive metal layer is formed above the second passivation layer and the first conductive metal layer. A patterned and etched photoresist layer is then formed over a portion of the second passivation layer, the photoresist layer having an opening overlying the contact pad, and a solder material is deposited in the opening to form a solder column. The photoresist layer is thereafter removed and the second conductive metal layer is etched to the second passivation layer by using the solder column as an etching mask. The solder column is then reflown to create a solder bump.

A semiconductor device with a sheet-like insulating substrate (101) integral with two or more patterned layers of conductive lines and vias, a chip attached to an assembly site, and contact pads (103) in pad locations has an encapsulated region on the top surface of the substrate, extending to the edge of the substrate, enclosing the chip, and having contact apertures (703) at the pad locations for external communication with the pad metal surfaces. The apertures may have not-smooth sidewall surfaces and may be filled with solder material (704) to contact the pads. Metal-filled surface grooves (710) in the encapsulated region, with smooth groove bottom and sidewalls, are selected to serve as customized routing interconnections, or redistribution lines, between selected apertures and thus to facilitate the coupling with another semiconductor device to form a package-on-package assembly.