The invention discloses a preparation method of a
tantalum-doped large-area two-dimensional
niobium disulfide material, belongs to the technical field of preparation of two-dimensional materials, and is used for solving the problems that thin-layer samples required to be used in most researches are prepared by adopting a mechanical stripping method, and the method is time-consuming, labor-consuming, incapable of realizing batch preparation, difficult to accurately control thickness and size and the like. According to the preparation method of the
tantalum-doped large-area two-dimensional
niobium disulfide material provided by the invention, the
transition metal oxide and the powdered
sulfur are taken as source substances, the fluxing salt
ammonium chloride is introduced, the fluorophlogopite and a
silicon wafer are taken as a growth substrate, and the
tantalum-doped large-area two-dimensional
niobium disulfide material is prepared through rapid growth under the
nitrogen-
hydrogen mixed carrier gas, the prepared two-dimensional material has larger size, the
maximum size of niobium disulfide can reach 115 micrometers, the size of tantalum-doped niobium disulfide can reach 112 micrometers, and compared with a traditional method for preparing the two-dimensional material through mechanical stripping, the method has the advantages of being high in
deposition rate, controllable in
crystal structure and surface morphology, good in
repeatability and the like.