Method for preparing high-temperature flexible LaNiO3 conductive film by sol-gel method

Abstract

The invention provides a method for preparing a high-temperature flexible LaNiO3 conductive film by a sol-gel method, which comprises the following steps of: 1, dissolving La (NO3) 5.6 H2O and C4H6NiO4. 4H2O in a solvent ethylene glycol monomethyl ether, adding a coupling agent, and stirring to obtain a LaNiO3 precursor solution; wherein the coupling agent is acetic anhydride; and 2, spin-coating the LaNiO3 precursor solution on a fluorophlogopite substrate to obtain a wet film, baking the wet film at 170-280 DEG C, then annealing to obtain a thin film on the fluorophlogopite substrate, and stripping the thin film to obtain the high-temperature flexible LaNiO3 conductive thin film. The method can be used for preparing the conductive film material with low resistivity and high-temperature flexibility.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of high-temperature flexible wearable LaNiO on the surface of an inorganic fluorophlogopite (F-Mica) substrate 3 Methods of conducting thin films. Background technique [0002] LaNiO 3 It is the only paramagnetic material in the perovskite rare-earth nickelate family. Its crystal structure is a pseudo-cubic perovskite structure, which belongs to perovskite rare-earth composite oxides. It has metal properties and room temperature resistivity. low, with a P-type conduction mechanism and no metal-insulator conversion with decreasing temperature. Due to its semiconducting, thermoelectric and catalytic properties, lanthanum nickelate has been widely used in electrode materials, film preparation, automobile exhaust gas treatment, industrial waste gas catalytic treatment, and catalytic degradation of water-soluble dyes. [0003] Currently used to prepare high tempera...

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Problems solved by technology

[0003] Currently used to prepare high-temperature flexible LaNiO 3 There are many methods for conducting thin films, such as chemical vapor deposition (CVD), magnetron sputtering (rf magnetron sputtering), metal organic deposition (MOD), metal organic chemical vapor deposition (MOCVD), liquid phase deposition ( LPD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), sol-gel method (Sol-Gel), etc., but the obtained thin film materials are all hard thin film materials, which greatly limits the LaNiO 3 Application of Conductive Thin Films in Flexible Wearable Magnetic Sensor Components

In addition, although the sol-gel method is used to prepare hard LaNiO on inorganic substrates 3 The exploration of conductive film, as disclosed in the "preparation method for the preparation of lanthanum nickelate film material" disclosed in the Chinese invention patent application publication CN101863679A published on October 20, 2010, also has the following deficiencies: (1) the mixed solution is Filtration treatment, which not only increases the cost, but also has cumbersome processing steps; (2) its precursor solution solvents are propionic acid and ethanolamine, because propionic acid and ethanolamine have strong acidity and strong alkalinity respectively, the mixing of the two will increase the viscosity of the precursor solution and the It is difficult to control the wettability of inorganic substrates, and there will be a lot of heat generation during the mixing process, and the pH value will change drastically, which will increase the risk of the experiment.

In addition, the strong alkaline solution will cause the hydrolysis of nickel, causing precipitates in the solution, which will affect the content of nickel in the precursor; (3) the gel wet film cracking temperature is 300-450 ° C, which not only increases the wet film cracking process Due to the high temperature, the organic matter in the gel wet film volatilizes too fast, thereby increasing the porosity of the film, reducing the risk of film conductivity, and increasing energy consumption; (4) the film materials obtained on all inorganic substrates are hard Thin film materials cannot be used in flexible and wearable electronic components

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