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Preparation method of large-size two-dimensional bismuth iodide single crystal

A bismuth iodide and large-size technology, which is applied in the field of preparation of large-size two-dimensional bismuth iodide single crystals, can solve problems such as inability to carry out further applications, and achieve the effects of convenient operation, good repeatability, and simple preparation process

Active Publication Date: 2021-11-16
化学与精细化工广东省实验室潮州分中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the growth of two-dimensional bismuth iodide single crystals is still in an almost blank stage, and the maximum size is still less than 10 μm, making further applications impossible.

Method used

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  • Preparation method of large-size two-dimensional bismuth iodide single crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for preparing a large-size two-dimensional bismuth iodide single crystal according to Example 1 of the present invention comprises the following steps:

[0025] S1, placing bismuth iodide powder in a corundum boat with an opening at one end, and then buckling the fluorophlogopite substrate on the corundum boat to form a gas phase trap; 1 g of bismuth iodide powder was added.

[0026] S2, put the gas phase trap into the central position of the tube furnace, and heat it to make the bismuth iodide powder reach the volatilization temperature; specifically, the opening direction of the corundum boat is consistent with the flow direction of the incoming argon and hydrogen gas Inversely, the volatilization temperature is 380°C.

[0027] S3, feeding argon and hydrogen into the tube furnace, diluting the gasified bismuth iodide and performing a reduction reaction under a constant temperature environment; feeding argon as a dilution gas, and feeding hydrogen as a reducin...

Embodiment 2

[0031] A method for preparing a large-size two-dimensional bismuth iodide single crystal according to Example 2 of the present invention comprises the following steps:

[0032] S1, placing bismuth iodide powder in a corundum boat with an opening at one end, and then buckling the fluorophlogopite substrate on the corundum boat to form a gas phase trap; wherein, 0.5 g of bismuth iodide powder was added.

[0033] S2, put the gas phase trap into the central position of the tube furnace, and heat it to make the bismuth iodide powder reach the volatilization temperature; specifically, the opening direction of the corundum boat is consistent with the flow direction of the incoming argon and hydrogen gas Inversely, the volatilization temperature is 330°C.

[0034] S3, feeding argon and hydrogen into the tube furnace, diluting the gasified bismuth iodide and performing a reduction reaction under a constant temperature environment; feeding argon as a dilution gas, and feeding hydrogen a...

Embodiment 3

[0038] A method for preparing a large-size two-dimensional bismuth iodide single crystal according to Example 3 of the present invention comprises the following steps:

[0039] S1, placing bismuth iodide powder in a corundum boat with an opening at one end, and then placing the fluorophlogopite substrate upside down on the corundum boat to form a gas phase trap; wherein, 0.1 g of bismuth iodide powder was added.

[0040] S2, put the gas phase trap into the central position of the tube furnace, and heat it to make the bismuth iodide powder reach the volatilization temperature; specifically, the opening direction of the corundum boat is consistent with the flow direction of the incoming argon and hydrogen gas Inversely, the volatilization temperature is 280°C.

[0041] S3, feeding argon and hydrogen into the tube furnace, diluting the gasified bismuth iodide and performing a reduction reaction under a constant temperature environment; feeding argon as a dilution gas, and feeding h...

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Abstract

The invention discloses a preparation method of a large-size two-dimensional bismuth iodide single crystal. The method comprises the following steps: S1, putting bismuth iodide powder into a corundum boat with an opening at one end, and then inversely buckling a fluorophlogopite substrate on the corundum boat; s3, introducing argon and hydrogen into the tubular furnace, and making the gasified bismuth iodide diluted and subjected to a reduction reaction; s4, after the reaction is finished, making the gas phase trap moved to a heating belt at the tail end of the tube furnace for cooling, and in the cooling process, making gas in the corundum boat deposited on the fluorophlogopite substrate to form attachment; and S5, after the gas phase trap is completely cooled, obtaining the two-dimensional bismuth iodide single crystal. The preparation method of the large-size two-dimensional bismuth iodide single crystal solves the problems that the bismuth iodide single crystal prepared by the existing method is small in size and uncontrollable in thickness, the whole preparation process is simple, the operation is convenient, and the repeatability is good; and two-dimensional single crystal bismuth iodide with different thicknesses and sizes can be obtained by controlling the cooling rate.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional material preparation, and in particular relates to a method for preparing a large-size two-dimensional bismuth iodide single crystal. Background technique [0002] Two-dimensional materials are a general term for a large class of layered materials. Their layers are connected by strong covalent bonds, and the layers are connected by weak van der Waals forces. Therefore, by changing the deposition temperature and pressure or airflow to adjust the size and thickness of 2D materials. Generally speaking, when the thickness of two-dimensional materials is reduced below 10nm, the properties of the materials will change dramatically due to the influence of surface effects and size effects. For example: bulk graphite is only a good conductor of electricity, while bilayer graphene is a semiconductor. Nowadays, research on two-dimensional materials mainly focuses on graphene, boron nitride, and nit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/12C30B29/64
CPCC30B23/00C30B23/002C30B29/12C30B29/64
Inventor 张翅腾飞涂溶罗国强郑颖秋张联盟
Owner 化学与精细化工广东省实验室潮州分中心
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