119 results about "Helium ions" patented technology

Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.

A photovoltaic cell is described having emitter portions formed at both a light-facing surface and a back surface of the cell. In some embodiments, heavily doped emitter regions extend between the front and back emitter regions, connecting them electrically. Use of this structure is particularly well-adapted to a cell formed by implanting a semiconductor donor body with hydrogen and / or helium ions, affixing the donor body to a receiver element, cleaving a lamina from the donor body, and completing fabrication of a photovoltaic cell comprising the lamina. The emitter portion formed at the unbonded surface may comprise amorphous silicon. The lamina may be thin, for example 10 microns thick or less.

The present invention relates to a SON MOSFET and method of manufacturing the same, in which a blister is formed within a silicon substrate, thus improving the disadvantages of a bulk structure and a Silicon-On-Insulator (SOI) structure at the same time. The SON MOSFET according to the present invention comprises isolation insulating films formed at both upper sides of a silicon substrate, a gate insulating film and a gate electrode that are sequentially formed on a surface of the silicon substrate between the isolation insulating films, a source region and a drain region that are formed on the silicon substrate between the gate insulating film and the isolation insulating films, a blister formed within the silicon substrate under the gate insulating film, and a silicon channel, which is surrounded by the blister, the source region and the drain region, within the silicon substrate, wherein the blister is formed of hydrogen or helium ion.

A method for depositing carbon films on membranes used in masks for X-ray or corpuscular projection, e.g. electron or ion beam, lithography is proposed in which sputtering is used and the membranes serving as sputter substrates are positioned in the off-axis configuration relative to the sputter targets. The carbon films thus produced have a compressive stress of the order of 10 MPa or below. For modifying the properties of carbon films after deposition, e.g. the deactivation of chemically reactive sites or stabilization of stress, ion bombardment with helium ions can be employed. This method anticipates changes in the film due to initial irradiation and serves to reach a plateau in which the stress varies only a little, i.e. within about 1 MPa or less.

The invention discloses a detection device for detecting sulfur hexafluoride electrical equipment fault gas. The detection device provided by the invention comprises a thermal conductivity detector, a separator and a pulsed discharge helium ion detector, wherein the separator contains a helium gas intake, a first separation unit, a second separation unit and a third separation unit, the helium gas intake is connected with the first separation unit, which is respectively connected with the second separation unit and the third separation unit; the third separation unit is connected with the thermal conductivity detector and the pulsed discharge helium ion detector (PDD); and the second separation unit is connected with the third separation unit. Based on the gas chromatography principle and by the adoption of multiple chromatographic columns and the tail-blowing method, the separation system is established to separate all parts for the determination of SF6 electrical equipment faults, and the pulsed discharge helium ion detector is applied for quantity analysis, thus overcoming defects of the prior art and leading to a good separating effect.

Ions with energy of as 2.0-5.0 Mev are injected into the surface of optic crystal and masks are prepared on the plane optical wave-guides formed. Etching the surface of the optic crystal by using Ar ion beam forms crestiform optical wave-guide. Injecting oxygen ion and silicon ion into non-linear optical crystal such as lithium niobate and barium metaborate forms augment type crestiform optical wave-guide. Infecting helium ion or hydrogen ion into most of optical crystals can form base type crestiform optical wave-guides. The forms crestiform optical wave-guides keep good non-linear properties. Technical parameters can control thickness, width and depth of these crestiform optical wave-guides. The invention can be utilized to produce photoelectronic device for ex. optical switches and optical modulators etc.

The invention discloses a static sampling introduction device and a method of a calibrating pressure leak hole, which belong to the field of measurement. The device and the method utilize pumping performance of a non-evapotranspiration type getter pump and introduce helium accumulated by the calibrated pressure leak hole into a calibration chamber, and a helium ion flow signal is generated on a quadrupole mass spectrometer. Helium with known quantity is prepared and is introduced into the calibration chamber in the same method, a helium ion flow signal is generated on the quadrupole mass spectrometer, and leakage rate of the calibrated pressure leak hole is obtained through simple calculation. The method greatly shortens accumulative time for the pressure leak hole, simultaneously improves a helium partial pressure value in the calibration chamber and calibration efficiency, extends calibration lower limit, and enables pressure leak hole with leak rate value smaller than 1*10-7Pa m<3> / s to be accurately calibrated.

The invention provides irradiation-resistant high-entropy alloy and a preparation method thereof. The general formula of the irradiation-resistant high-entropy alloy is TiZrHfVMoTaxNby, wherein X is no more than 0.25 and no less than 0.05, y is no more than 0.5 and no less than 0.05, and x and y are molar ratio. The preparation method of the irradiation-resistant high-entropy alloy comprises the following steps: sequentially mixing Ti, Zr, Hf, V, Mo, Ta and Nb, and then adopting vacuum electromagnetic suspension induction smelting or vacuum electric arc melting to obtain the irradiation-resistant high-entropy alloy. The irradiation-resistant high-entropy alloy is excellent in performance; helium ion simulated irradiation does not generate irradiation hardening damage; on the condition thatthe helium bubble size and traditional alloy size is equivalent, the bubble density is far lower than the density of the traditional alloy, and the lattice constant after irradiation is reduced abnormally; the irradiation resistance of the irradiation-resistant high-entropy alloy is far better than that of the traditional alloy; the irradiation-resistant high-entropy alloy has excellent strengthand plasticity; the compression yield strength of the irradiation-resistant high-entropy alloy under the cast condition is as high as 1.1 Gpa, and the compression ratio and elongation exceed 50%.

The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.

The invention provides a method for manufacturing a double-layer SiN nanopore structure for DNA base sequence detection. The method comprises the following steps: firstly, providing a silicon substrate serving as a base plate; depositing a structural layer consisting of three layers of nano films on surfaces of two sides of the substrate by using an LP-CVD process, wherein the three layers of nano films are respectively SiN / SiO2 / SiN upwards from the substrate; depositing a sacrificial layer on the surface of the structural layer by using the LP-CVD process; etching the structural layer and the sacrificial layer on one side of the substrate so as to form a substrate release window; etching the silicon substrate by using an alkali solution so as to obtain a self-supported nano film consisting of the structural layer and the sacrificial layer; etching the sacrificial layer above the self-supported nano film so as to obtain a suspended structural layer; etching the suspended structural layer by using helium ion beams to obtain nano through holes; finally etching SiO2 in the structural layer by using buffered hydrofluoric acid, thereby obtaining the double-layer SiN nanopore structure which is partitioned by SiO2 cavities. The method is simple in process, and due to compatibility with a CMOS process, the double-layer SiN nanopore structure is relatively good in expansibility, meanwhile can be repeatedly used, and has relatively wide use prospects in the field of biochemical detection.

The invention relates to detection equipment and technology for a gas chromatography instrument, in particular to a gas chromatography detection system and method for analyzing trace impurities in ultrahigh pure gas. A first molecular sieve chromatographic column (51) is arranged between a switching valve VI (1) and a switching valve VII (2); a second molecular sieve chromatographic column (52) is arranged between a switching valve VII (2) and a switching valve VIV (4); and a second column separator (62) is arranged between the switching valve VIII (3) and switching valve VIV (4). A secondary sampling way is adopted for sample gas, and a main component is pre-cut during primary sample feeding of a ten-way switching valve VI (1) and subjected to back flushing during secondary sample feeding of the ten-way switching valve VI (1); and the main component is separated and switched, and enters a helium ion detector (8) for analyzing. The gas chromatography detecting system is controlled through each valve, the sequence of actions is executed by using an event draw-up program, the entire analyzing process is controlled automatically, actions are rapid, consistent and reliable, and the data repeatability and accuracy of the system are ensured through a stable flow gas channel and accurate valve switching.

A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.

A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and / or helium ions to define a cleave plane. Pinholes in the lamina leave column asperities at the exfoliated surface of the donor wafer, and the beveled edge may leave an edge asperity which fails to exfoliate. To prepare the surface of the donor wafer for reuse, mechanical grinding removes the column and edge asperities, and minimal additional thickness. Following cleaning, growth and removal of an oxide layer at the surface rounds remaining peaks. The smoothed surface is well adapted to bonding to a receiver element and exfoliation of a new lamina. A variety of devices may be fabricated from the lamina, for example a photovoltaic cell.

The invention mainly belongs to the field of oil and gas exploration and development, and particularly relates to a three-dimensional imaging method of shale nanopores with a focused ion beam-helium ion microscope. The method adopts the ultra-high resolution imaging function of a helium ion microscope and the cutting function of the focused ion beam to perform ultra-high resolution three-dimensional imaging of the nanopores of the shale organic matter, which has the characteristics of high resolution, thin slice, and uniform and stable slice. The method makes up for the disadvantage of the technology combined traditional scanning electron microscope with focused ion beam that cannot perform three-dimensional imaging for nanopores. The method can visually show the characteristics of pores over 3nm in shale organic matter such as three-dimensional spatial structure, morphology, distribution, connectivity and porosity, which has great significance for scientifically explaining the mechanism of shale gas occurrence and migration.

The invention relates to a floating type lithium niobate optical waveguide. A lithium niobate sample is adopted as base material, and operation is carried out according to the following steps of bombarding the lithium niobate sample with a helium ion (He+) beam which is 1 Mev in energy, forming crystal lattice damage in a certain area below the surface of the sample, enabling the parts with the crystal lattice damage to be provided with refractive index smaller than that of undamaged parts, limiting a light beam in a waveguide area to spread, etching round or rectangular holes in the surface of the sample in a focused ion beam etching way, enabling mixed acid solutions to be contacted with the parts with the crystal lattice damage through the holes, further corroding the parts, forming an air interlayer, and forming a floating waveguide structure on the surface of the lithium niobate sample. The lithium niobate optical waveguide plays a good role in limiting optical signals spreading in the lithium niobate optical waveguide, has extremely low transmission loss, and can be widely used for electronic components, optical components and modulation components.

Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.

The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.

The invention relates to a preparation method of a metal-oxide-semiconductor field-effect transistor (MOSFET) with a silicon-on-nothing (SON) structure, which is characterized in that: a buffering layer is grown on a silicon underlay, then a gate-region photolithography mask is utilized to be photoetched through photosensitive resist with a polarity being opposite to that of photosensitive resist for gate-region photoetching technique, so a position for forming the gate region on an active area is exposed, then hydrogen ion and helium ion are injected, and a hollow layer is formed inside the active area below the position of the gate region through annealing after removing the photosensitive resist; and finally the buffering layer is removed, and the standard complementary metal-oxide semiconductor (CMOS) technique is carried out. Due to the adoption of the method, the MOSFET having the SON structure only with an MOS channel having a hollow layer is realized, and the process of the source-drain region is not influenced; and the gate-region photolithography mask of the standard CMOS technique is used for defining a hydrogen and helium injection window, so an additional photolithography mask is unnecessary to prepare, and the automatic aligning of the hollow layer and the gate-region position can be realized.

The invention discloses a circuit breaker nozzle ablation state evaluation system. The system comprises a multi-helium ion detection device, a parameter input module and a analysis terminal, wherein the multi-helium ion detection device is used for performing separation test on components of a mixed gas of decomposed products of the circuit breaker to be tested so as to track the evolution development trend of components of an SF6 gas, the parameter input module is used for inputting test parameters corresponding to a multi-helium ion detection module according to the application scene evaluated by a circuit breaker nozzle, the key characteristic parameter extraction module is used for extracting key characteristic parameters according to analysis test data of the multi-helium ion detection device, and the analysis terminal is used for performing analysis and calculation by combining the analysis test data of the multi-helium ion detection device with the key characteristic parametersextracted by the key characteristic parameter extraction module so as to carry out arc extinguishing chamber nozzle state analysis and maintenance strategy making. The system can provide the key basisfor the rapid, efficient and accurate evaluation of the residual useful life of the arc extinguishing chamber nozzle, and help the maintenance personnel to make an overhaul plan better, so that the power failure inspection time is shortened, and the power failure loss is reduced.

The invention provides an irradiation-resisting FCC structure high-entropy alloy. The general formula of the irradiation-resisting FCC structure high-entropy alloy is FeCoNiVMoTixCry, wherein x is larger than or equal to 0.05 and smaller than or equal to 0.2, y is larger than or equal to 0.05 and smaller than or equal to 0.3, and x and y are molar ratios. The irradiation-resisting FCC structure high-entropy alloy is excellent in irradiation resisting performance, the phenomenon of irradiation hardening saturation can happen under the irradiation conditions that the temperature is high and is600 DEG C, and the dose of helium ions is high and is 1-3 x 10<16>ions / cm<2>, the lattice constant after irradiation is abnormally reduced, the irradiation resisting performance of traditional alloysis far exceeded, and meanwhile excellent plasticity and certain strength are achieved; and at the cast-state room temperature, the tensile failure strength of the irradiation-resisting FCC structure high-entropy alloy exceeds 580 Mpa, and the engineering strain (stretching ductility ) exceeds 30%.

After making an electrical continuity in the isolated pattern by a metal deposition film by a CVD of the electron beam or the helium ion beam generating from the gas field ion source, the defect is corrected and, after the correction, the metal deposition film is physically removed by an AFM scratch working probe. A worked waste generated by the AFM scratch working is removed by a washing.

A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth D1 as measured from the front surface toward the central plane; (b) implanting hydrogen ions through the front surface of the monocrystalline donor substrate to an average depth D2 as measured from the front surface toward the central plane; and (c) annealing the monocrystalline donor substrate at a temperature sufficient to form a cleave plane in the monocrystalline donor substrate. The average depth D1 and the average depth D2 are within about 1000 angstroms.

The invention provides a preparation method and laminated structure of a tensile strain Ge film. The preparation method includes the following steps: firstly, extending out an InxGa(1-x)As layer and a top layer Ge film on a GaAs underlayer, wherein the In component x is > 0 and <=1, the thickness of the InxGa(1-x)As layer is enabled to be no more than the critical thickness of the InxGa(1-x)As layer on the GaAs underlayer, and the thickness of the top layer Ge film is enabled to be no more than the thickness of the critical thickness of the top layer Ge film on the InxGa(1-x)As layer to prepare samples of the Ge film, secondly, infusing helium ions or hydrogen ions to the samples and enables peak values of the helium ions or the hydrogen ions to be distributed under a combined interface of the InxGa(1-x)As layer and the GaAs underlayer 10-100 nm, at last, conducting rapid thermal annealing to the samples to obtain relaxed InxGa(1-x)As layer and tensile strain Ge film. Thus purposes that Ge films with tensile strain and high migration rate are prepared with low cost, the thickness of a buffer layer of the InxGa(1-x)As is reduced, and penetrating dislocation density of the buffer layer of the InxGa(1-x)As is reduced.

The invention provides a nanopore sandwich structure for DNA base sequence detection and a preparation thereof. The preparation method includes the steps: deposting Si3N4 / SiO2 / Si3N4 three-layer nano-films on both sides of a substrate; forming a substrate release window by etching one thin film at one side of the substrate; then etching the top layer Si3N4 in the film on the other side of the substrate; then obtaining the self-supporting nano-film composed of two layers of Si3N4 / SiO2 nano-film by etching the substrate from the substrate release window with alkaline solution; then depositing Si_3N_4 over SiO_2 to obtain suspended nano-film structure, which is annealed and etched with helium ion beam to form nano-via; and obtaining a sandwich structure consisting of a SiO2 cavity and two Si3N4 nanopores by etching SiO2 with buffered hydrofluoric acid. The invention has the advantages of simple process, good expansibility due to compatibility with the CMOS process, and can be used repeatedly and has a wide application prospect.

The present invention discloses a helium ion gas chromatograph and a use method thereof. The helium ion gas chromatograph comprises a carrier gas source, a zero dead volume pressure stabilizing valve, a helium purification device, a zero dead volume four-way junction, a purging system inlet, a purging system outlet, a 5A molecular sieve chromatographic column, a detector, a back pressure valve and a sample device. The carrier gas source, the zero dead volume pressure stabilizing valve, the helium purification device and the zero dead volume four-way junction are sequentially communicated. Thezero dead volume four-way junction is respectively communicated with the purging system inlet, the detector and the sample device. The purging system inlet and the purging system outlet are arranged on the sample device. The sample device, the 5A molecular sieve chromatographic column, the detector and the back pressure valve are sequentially communicated. With the present invention, the interference of the background impurities in the carrier gas is eliminated, the interference to the system due to the air is eliminated, the detection limit of the sample is improved, the separation effect ofthe chromatographic column is improved, and the accuracy and the stability of the experimental results are improved.

A reverse blocking IGBT is disclosed in which a lifetime control region formed by helium ion irradiation is selectively provided in a region within a range approximately corresponding to the planar pattern of a p-type base region in the direction along the principal surface of a silicon semiconductor substrate of n-type and within a range from the upward vicinity to the downward vicinity of the p-n junction on the bottom of the p-type base region in the direction of the depth of the silicon semiconductor substrate. This can provide a reverse blocking MOS semiconductor device capable of further decreasing a reverse leakage current less than the current in a previous device while making the influence on an on-state current small.

The invention discloses a method for detecting content of carbon dioxide in natural gas. The technical scheme is as follows: the content of the detected component of carbon dioxide is used on a GDX-502 packed column so as to obtain good separation effect and present special signals, the signals are detected by a helium ion detector (HID) and form an obvious absorption peak, and experiments show that the peak area of the formed carbon dioxide content and the content thereof are in direct proportion, therefore, the peak area of the carbon dioxide in standard gas and the content thereof are made in standard work curve, then steel cylinders with sample natural gas are connected to gas chromatography through a special stainless steel tube and a needle valve for detection so as to obtain relevant peak area, and finally, the carbon dioxide standard curve well prepared is invoked, an instrument can directly read and calculate the content of the carbon dioxide in the sample natural gas through an external standard method. The method is used for detecting the content of the carbon dioxide in the natural gas, and has the advantages of being simple in sampling, convenient in operation, rapid in analysis speed, high in detection accuracy, and low in method detection limitation.

The invention discloses a preparation method of a resolution test card for Nano CT imaging quality detection and belongs to the technical fields of nanometer materials and CT imaging. The method comprises the steps that a base body is preprocessed, and the preprocessed base body is acquired; the preprocessed base body is placed on a sample table inside a helium ion microscope, a gallium ion beam current generated by a gallium ion source in the helium ion microscope is utilized to perform etching on the preprocessed base body, and etched stripes are acquired; and width calibration is performedon the etched stripes, and the resolution test card is acquired. The invention furthermore provides the resolution test card prepared through the method for Nano CT imaging quality detection. The preparation method has the advantages that control is easy, the process is simple, the cycle is short, efficiency is high, and cost is low; and the prepared resolution test card for Nano-CT imaging quality detection is uniform in stripe width and large in depth ratio.