Preparation method and laminated structure of tensile strain Ge film

Abstract

The invention provides a preparation method and laminated structure of a tensile strain Ge film. The preparation method includes the following steps: firstly, extending out an InxGa(1-x)As layer and a top layer Ge film on a GaAs underlayer, wherein the In component x is > 0 and <=1, the thickness of the InxGa(1-x)As layer is enabled to be no more than the critical thickness of the InxGa(1-x)As layer on the GaAs underlayer, and the thickness of the top layer Ge film is enabled to be no more than the thickness of the critical thickness of the top layer Ge film on the InxGa(1-x)As layer to prepare samples of the Ge film, secondly, infusing helium ions or hydrogen ions to the samples and enables peak values of the helium ions or the hydrogen ions to be distributed under a combined interface of the InxGa(1-x)As layer and the GaAs underlayer 10-100 nm, at last, conducting rapid thermal annealing to the samples to obtain relaxed InxGa(1-x)As layer and tensile strain Ge film. Thus purposes that Ge films with tensile strain and high migration rate are prepared with low cost, the thickness of a buffer layer of the InxGa(1-x)As is reduced, and penetrating dislocation density of the buffer layer of the InxGa(1-x)As is reduced.

Description

technical field [0001] The invention relates to the field of silicon-based optoelectronic integration, in particular to a preparation method and a stacked structure of a tensile strained Ge thin film. Background technique [0002] With the development of the information industry, information data will increase massively, and higher requirements and challenges will be put forward for the future development of information computing, transmission and other technologies. One of the main solutions is to combine the existing mature microelectronics and optoelectronics to realize silicon-based optoelectronic integration, which will become one of the important directions for the development of the information industry. In the past ten years, due to its great industrial significance, the research on key materials and devices for silicon-based optoelectronic integration has attracted serious attention from the international scientific community (such as MIT, Harvard University) and in...

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Problems solved by technology

[0004] The mobility of Ge increases with the increase of tensile strain. In order to obtain high-strain Ge thin films, the main methods currently used, such as using the difference in thermal expansion coefficients of Si and Ge to achieve tensile strain, but the Ge thin films obtained by this method The tensile stress is small; another method is to grow In on GaAs with increasing composition x Ga 1-x As buffer layer, then in the In x Ga 1-x Epitaxial Ge film on As, due to In x Ga 1-x The As lattice constant is relatively large, so that a Ge film with tensile strain can be obtained. However, this method increases the cost due to the growth of a buffer layer with a large thickness, which limits the further application of the strained Ge film.

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