The invention belongs to the field of porous
ceramic materials and discloses a
silicon carbide filtering film and a low temperature preparation method thereof. The
silicon carbide filtering film comprises pure SiC, a
surface film layer is prepared from
fine grain silicon carbide through accumulation, has the
pore diameter of 20 nanometers to 20 micrometers and film layer
porosity of 40-50% and has high through
porosity, low pressure drop, high strength, good
thermal shock resistance and a high usage temperature. Film
slurry is prepared from fine
silicon carbide particles, an
organosilicon precursor and a pore forming agent additive, the surface is spray-coated with the film
slurry so that a film layer is formed, and the film layer is dried and sintered so that a pure
silicon carbide film is obtained. The
organosilicon precursor is cracked to produce a
coupling phase, a
sintering temperature is low, an aperture structure can be controlled easily, and the film layer can be used in an oxidation
atmosphere and in a reduction
atmosphere, has strong acid and base resistance and can be used for various high and low temperature fluid filtering purification such as
coal gasification
chemical engineering, IGCC and PFBC
coal gasification generating, and high temperature
flue gas, automobile exhaust and water purification.