35results about How to "Control etch rate" patented technology

The liquid composition for etching a metallic thin film consisting essentially of silver is obtained by blending, by weight, 40 to 50% phosphoric acid, 1.5 to 3.5% nitric acid, 25 to 40% acetic acid, and water.

The invention provides a deep silicon hole etching method, comprising a first etching step of inletting a first etching gas into a reaction chamber, and meanwhile switching on an excitation power supply and a bias power supply so as to etch a silicon hole in a silicon substrate, the first etching gas including a mixed gas of SF6 and O2, the gas flows of which are set to enable a vertical upper portion for the side wall of the silicon wall; and a second etching step of inletting a second etching gas into the reaction chamber, and meanwhile switching on the excitation power supply and the bias power supply so as to modify the morphology of the bottom of the silicon hole while continuing the etching of the silicon hole, the second etching gas including a mixed gas of SF6, C4F8, He and O2, the gas flows of which are set to enable the bottom width of the side wall of the silicon wall to shrink and the bottom of the silicon hole to be smooth. The invention can be used for obtaining a deep silicon hole of which the upper portion of the side wall is vertical, the bottom width of the side wall shrinks and the bottom is flat and smooth.

When etching the SiC substrate ( 40 ) by heating the machined SiC substrate ( 40 ) in a SiC atmosphere, the etching rate is controlled by adjusting the pressure of the inert gas around the SiC substrate ( 40 ). Thereby, when latent flaws and the like exist on the SiC substrate (40), the latent flaws and the like can be removed. Therefore, even if epitaxial growth, heat treatment, etc. are performed, the surface of the SiC substrate (40) will not be rough, so a high-quality SiC substrate can be manufactured.

The invention provides a method for manufacturing a nanowire structure. The method comprises the following steps: step S1, providing a substrate, and forming a first semiconductor material and a mask part, which are away from the substrate, on the substrate; step S2, performing surface treatment on the first semiconductor material, so that the surface part of the first semiconductor material forms a first surface layer; step S3, etching to remove the first surface layer, wherein the ratio of the removal rate of the first surface layer to the removal rate of the substrate is greater than 10; and repeating step S2 and step S3, until a first semiconductor material forms a nanowire. By adoption of the method, self-limiting etching is realized, and relatively small damage to the substrate in the etching process is guaranteed; and then the surface treatment is performed, and the etching is performed until the nanowire structure with a predetermined size is formed, and mover the repeatability and the uniformity of the formed nanowire structure are good.

The invention relates to the technical field of a semiconductor, and discloses a multilayered medium etching method. The method comprises the following steps of: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is sequentially coated with the multilayered medium and a graphic photoresist layer; and ionizing the etching gas which is the mixed gas such as fluorocarbon gas, fluorinated carbureted hydrogen gas and nitrogen oxide gas by taking the graphic photoresist layer as a mask, and etching the multilayered medium by the etching gas until the multilayered medium is exposed to the surface of the semiconductor substrate. The method takes the fluorocarbon gas and the fluorinated carbureted hydrogen gas with high C / F ratio as the main etching gas; and the nitrogen oxide gas in a certain flow is added, so that a purpose of etching the multilayered medium formed by different materials through one-step plasma etching primary is achieved, and the etching is not performed by many steps of layering the materials. The photoresist layer as the mask has a low etching rate.

The invention discloses a substrate wet process technological method, and aims to solve the technical problem of potential damage in the substrate processing process in the existing wet etching process. The technological method comprises the steps of setting a bearing platform and fixing a substrate through the bearing platform; moving the bearing platform along a circumferential track to convey the substrate; setting processing equipment along the outer side of the circumferential track; and in the substrate conveying process, adjusting the orientation and / or height of the substrate by the bearing platform to be matched with the processing equipment. The moving technological beat of the bearing platform along the circumferential track is controlled by an annular conveyor belt, so that consumed resource, manpower, time and other maintenance cost in replacing a huge number of rolling wheels periodically can be saved; the etching process and cleaning technological method are further improved; the jetting direction of the medicinal liquid and net water flow is changed; etching rate and medicinal liquid take-out amount are controlled effectively; and the cost is lowered while the etching quality can be effectively ensured. The invention also provides a substrate wet process technological apparatus.

When a SiC substrate (40), which has been subjected to machining, is subjected to heat treatment under a SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, in cases when latent scratches or the like are present in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment are performed, and thus high-quality SiC substrates can be produced.

The invention provides a double exposure method of a NAND flash memory structure, comprising the following steps: providing a substrate, the substrate including a storage area; depositing stacked layers on the storage area on the substrate; successively depositing stacked layers on the stacked layers Depositing the first sacrificial layer by chemical reaction, depositing the second sacrificial layer by high temperature oxidation reaction and depositing the indeterminate carbon film; performing the first etching, etching to the upper surface of the stacked layer to form several grooves; performing the second For secondary etching, an etching solution is added to several of the trenches to etch the first sacrificial layer and the second sacrificial layer. And by using two sacrificial layers with different formation methods, the etching rate of the first sacrificial layer and the second sacrificial layer can be controlled during the second etching, so as to control the morphology of the first sacrificial layer and the second sacrificial layer As well as critical dimensions, thereby reducing the possibility of uneven etching in subsequent etching.