53results about How to "Achieve reversible transformation" patented technology

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non / crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non / crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.

The invention discloses an all-solid-state lithium-air battery and a preparation method and application thereof. The all-solid-state lithium-air battery provided by the invention comprises a lithium metal anode, a porous ceramic support body, a compact electrolyte thin film, a porous cathode thin film, a sealing material, a current collector and a lead, wherein the porous support body is made of garnet type lithium-ion solid electrolyte material; in an air electrode catalyst and permeation holes of the lithium metal anode, a three-phase boundary for battery reaction is expanded, and the battery polarization resistance is reduced; the thickness of the battery electrolyte thin film is smaller than 30 micrometers, a lithium ion transmission path is shortened, and the battery ohmic resistance is reduced; and the battery is a tubular structure with a closed end, the lithium metal anode is poured into a tube, and the battery is easy to seal and is easy to work in different conditions. The all-solid-state lithium-air battery prepared according to the invention has the advantages of high charging-discharging capacity, high rate performance, high cycle stability, wide working temperature range and the like, and is applicable to the field of various mobile electronic devices and power batteries.

The invention discloses a preparation method of a photo-responsive linear azobenzene polyoxyethylene ether nonionic surfactant, belonging to the technical fields of textile and chemical industry. The azobenzene polyoxyethylene ether nonionic surfactant is synthesized from 4-hydroxyazobenzene and polyethylene glycol. The azobenzene polyoxyethylene ether nonionic surfactant can be subjected to reversible heterogeneous treatment from an anti-form to a cis-form under the irradiation of ultraviolet light and visible light, and the tightness of the azobenzene polyoxyethylene ether nonionic surfactant arrayed on the surface of a foam liquid membrane is changed through steric hindrance, so that the effects of low concentration and high foam stabilizing property are achieved. The azobenzene polyoxyethylene ether nonionic surfactant can be used as a wetting permeating agent, a detergent and a low-concentration surfactant, so that the demand contradiction that foam has different stabilities before and after being dyed and finished is solved, the utilization rate of the foam can be increased, the foam can be effectively recycled, the pollution is alleviated, and the wasting of a chemical reagent is reduced.

The invention relates to an or gate based on magnetic Skyrmion and a control method thereof. The or gate comprises a magnetic nano-track, wherein the magnetic nano-track comprises a magnetic layer and a strong spin track coupling layer which are in mutual contact connection, and the magnetic layer comprises a first input end, a second input end, a Y-shaped magnetic rail and an output end. The Y-shaped magnetic rail comprises a first magnetic track, a second magnetic track, a third magnetic track and a fourth magnetic track. The magnetic Skyrmion enters the Y-shaped magnetic rail from the first input end and / or the second input end, then is changed into a magnetic domain wall pair, passes through the Y-shaped magnetic rail, and then is restored into the new magnetic Skyrmion. The new magnetic Skyrmion and enters the output end. The narrow magnetic rail width in the Y-shaped magnetic rail is smaller than the diameter of the magnetic Skyrmion. The magnetic rail width of the third magnetic rail is greater than the diameter of the magnetic Skyrmion. Reversible conversion can be realized between the magnetic Skyrmion and the magnetic domain wall pair. The or gate formed through movement of the magnetic Skyrmion in the magnetic nano-track is characterized by small size, low power consumption and high stability.

The invention relates to a preparation method of force response type surface folds with adjustable light transmittance. The method comprises the steps as follows: performing oxygen plasma etching on atransparent elastic substrate to form a hydrophilic layer; coating the surface of the etched elastic substrate with a rigid composite film solution, and drying the surface to form a film; releasing stress after stretching the prepared double-layer film. Regular folds on the surface of a material are obtained with the method. The hydrophilic property of the elastic substrate is changed through ionetching, the folds with regular shapes are formed through pre-stretching after the surface is coated with the rigid molecular solution and the film is formed, the transmittance of the folds for visible light is measured by applying different strains to the folds, and reversible transformation of regulating the light transmittance of the fold surfaces in the large range of 6%-90% is realized. Theoperation method is wide in application range, simple to operate, good in reversibility and capable of realizing large-area preparation and has potential application value in the intelligent window field.

The invention relates to a phase change storage device based on an antimony telluride composite phase change material and a preparation method thereof, belonging to the field of computer technology. The device comprises a substrate, a lower electrode, a heat generation electrode layer, an insulating layer, a phase change material layer and an upper electrode, wherein the phase change material layer is a composite phase change material layer containing antimony telluride and silicon nitride; the atom percent content range of the silicon nitride is 0.5-30; and the proportional range of Sb atoms and Te atoms in the phase change material layer is 80 / 20-30 / 70. The composite phase change material layer which has high crystallization velocity and higher heat generation efficiency is used by the phase change storage device of the invention, thus the operation velocity of the phase change storage device can be improved, and the RESET operation current of the phase change storage device can be lowered.

The disclosed materials include three types: (1) alloy firm of TeaSibSbl00-(a+b); (2) firm of (TeaGebSb l00-(a+b) )c Si1oo-c formed from Ge-Sb-Te alloy with Si being doped into; (3) alloy firm of TeaSicGe(b-c)Sb l00-(a+b) obtained by using Si to partially replace Ge in Ge-Sb-Te alloy. Comparing common Ge2Sb2Te5 film of phase change, the invention possesses higher resistance of crystalline state, higher rate of change of amorphous state / crystalline state, lower rate of change of film thickness of amorphous state / crystalline state, and lower melting point. These characters make storage devices of film of phase change containing chalcogenide in Si group possess higher rate of on / off and stability of device. The invention makes for lowering operation current for writing storage devices as well as for realizing storage in multiple values in higher density.

The invention provides an antimony-rich Si-Sb-Te sulfur group compound phase-change material for a phase change memory, belonging to the technical field of micro-electronics. The phase-change material maintains an atomic ratio of Si to Te of 1:3, the component general formula is SiaSb (100-4a) Te3a, wherein a is more than or equal to 10 and less than or equal to 20; compared with the existing Ge2Sb2Te5, the material features high crystallization temperature, good heat stability and better data retention capacity; moreover, the compound phase-change material in the crystalline state enjoys higher electrical resistivity and small thickness change of the material in crystalline state / amorphous state. With the phase-change material of the invention as the information memory medium, cycle operation times of the memory can be effectively increased, write operation power dissipation can be lowered and device reliability can be improved.

The invention relates to the technical field of functional materials and devices, in particular to a multimode electrochromic device and a preparation method thereof. According to the preparation method of the multimode electrochromic device, dipping lifting is adopted so that a metallic oxide nano-particle film can be formed on a conducting surface of a transparent conducting substrate more uniformly and reversible transition among a mirror surface state, a transparent state and a black state of the electrochromic device can be realized, and controllability is high. The multimode electrochromic device is prepared through the preparation method. The multimode electrochromic device and the preparation method thereof have the advantages that reversible transition among the mirror surface state, the transparent state and the black state can be realized, and controllability is high.

The invention provides a C-doped Sc-Sb-Te phase change memory material, a phase change memory cell, and a method for fabricating the same. The Sc-Sb-Te phase change memory material is a Sc-Sb-Te phasechange memory material. In the doped Sc-Sb-Te phase change memory material, the atomic percentage of C is 1% to 40%. The Sc-Sb-Te3 is doped with C, and since C is a low-thermal-conductivity material,thermal diffusion can be well avoided. Further, the good conductivity of C ensures good conduction of the material. Under the effect of external energy, the C-doped Sc-Sb-Te3 phase change memory material can reversibly switch between a high-resistance state and a low-resistance state, and a resistance ratio of the high-resistance state to the low-resistance state can reach two orders of magnitude. When used as the storage medium of a phase change memory, the phase change memory cell not only has the advantages of fast phase change speed and low write operation current, but also is greatly improved in the high-temperature data retention and the reliability. The phase change memory using the phase change memory cell structure of the invention has superiorities of high speed, low power consumption, and good data retention.

The invention provides a Si-Sb-Te based sulfur group compound phase-change material for a phase change memory, belonging to the technical field of micro-electronics. The phase-change material has high heat stability and high crystallization velocity, and the component general formula is (SiaSbbTec)1-yMy, wherein a nitrogen element or an oxygen element or the mixture of the nitrogen element and the oxygen element; in SiaSbbTec, the content a of Si is 10-25% by atom, and the atom percent ratio of the content between Sb and Te is 1.7<=(b / c)<=2.0; and the content of the doped element M is 0-25% by atom. Under the electrical pulse effect, the material can be converted reversibly between the non-crystalline state (high impedance state) and the crystalline state (low impedance state), thus the information storage is realized; compared with the traditional Ge2Sb2Te5, the material has the advantages of high crystallization temperature, higher heat stability and better crystalline state resistivity; and with the phase-change material provided by the invention as the information memory medium, data retention capability of the memory can be effectively increased, rapid operation velocity can be maintained, the write operation power consumption can be lowered, and the reliability of the memory is improved.

The invention belongs to the technical field of thermoplastic polyurethane elastomers, and particularly relates to a photochromic thermoplastic polyurethane elastomer material for a waterproof and moisture-permeable film, and a preparation method thereof. The material is prepared from, by weight, 55-65 parts of polymer diol, 25-35 parts of diisocyanate, 7-12 parts of a chain extender, 0.01-0.03 part of a catalyst, 0.1-2 part of a photosensitive auxiliary agent, and 1-10 parts of a functional filler. The photochromic thermoplastic polyurethane elastomer material for the waterproof and moisture-permeable film has excellent mechanical properties, the waterproof and moisture-permeable rate of the prepared film is greater than 10000 g / m<2> / 24h, the hydrostatic pressure resistance of the prepared film is greater than 10000 mmH2O, the film can be changed from colorless to colored under the irradiation of ultraviolet rays with certain wavelength, and then the film is changed from colored to colorless after being irradiated by visible light. The material can be used as a functional film material in the fields of clothing, shoe material bags and suitcases and the like, and has wide application prospects.

The invention discloses a cobalt coordination polymer with reversible monocrystal-monocrystal transformation behavior. The chemical formula of the cobalt coordination polymer is [Co1.5(tipb)(SO4)(acid)0.5](solvent), wherein tipb is ligand 1,3,5-tri(p-imidazole phenyl) benzene, acid is diacid, solvent refers to a solvent, and the preparation method comprises the following steps: adding the ligand, diacids and cobaltous sulfate in the anhydrous solvent, adding pyridine to adjust the pH value to alkalescence, obtaining bulk blue monocrystal through the solvothermal reaction, naturally cooling, washing and drying, wherein the blue monocrystal can be transformed into the cobalt coordination polymer red monocrystal under the action of water or ammonia. The cobalt coordination polymer disclosed by the invention has the advantages that the micropore cobalt coordination polymer material can be used for realizing the reversible transformation from one crystal to another crystal with the change of crystal color, aperture, dielectric and topological structure; and the material has potential application value in the material field such as sensing and absorption separation.

The invention relates to a two-layer phase change material, a phase change memory cell and a preparation method thereof. Sb-Te / Sb-Te or Ge-Te / Sb-Te; Where the general chemical formula of Sb-Te is SbxTe100-X, satisfies 20<x<80. The structure of the phase change memory cell comprises a lower electrode layer, an upper electrode layer and a phase change material layer positioned between the lower electrode layer and the upper electrode layer, wherein the phase change material layer is a two-layer phase change material Ge-Sb-Te / Sb-Te or Ge-Te / Sb-Te. When double-layer phase change material is used as the storage medium of phase change memory, phase change memory cell not only has the advantages of fast phase change speed and low write operation current, but also improves the reliability of the device.

The invention belongs to a phase change material and a preparation method therefor in the field of micro-electronics, and particularly relates to an Al / Ge10Sb90 type superlattice phase change thin film material used for a phase change memory and a preparation method. The Al / Ge10Sb90 type superlattice phase change thin film material used for the phase change memory adopts a multi-layer composite film structure, and is formed by an Al layer and a Ge10Sb90 type in an alternate deposition manner; and the Al layer and the Ge10Sb90 type are used as one alternate period, and the Al layer in the nextalternate period is deposited above the Ge10Sb90 type of the former alternate period. The Al / Ge10Sb90 type superlattice phase change thin film material used for the phase change memory adopted in theinvention is a novel phase change material, has high thermal stability and also has the advantages of high speed and low power consumption.

The invention discloses a method for preparing GO (graphene oxide) gel with multiple stimulus responses. The method comprises the step of preparing a polymer containing a ketonic carbonyl group or an aldehyde group and a thermo-sensitive type structural unit, wherein the polymer can be prepared into the GO gel with the stimulus responses through the action between the ketonic carbonyl group or the aldehyde group and hydrazide-bonding functionalized GO. The GO gel can reversibly realize conversion between sol and gel and volumetric shrinkage-expansion change under multiple stimulations of pH, temperature and NIR (Near Infrared Ray). The GO gel with the multiple stimulus responses has great potential application value in the fields of bio-sensing, controlled drug release and the like.

Theories and experiments show that energy needed by reversible phase change can be reduced through reduction of a phase change region, and the purpose of reducing power consumption can be further realized. The traditional preparation of the high-density nanometer structure needs a complex technology with multiple steps and precise nanometer exposure, is long in preparation period and low in efficiency. The invention provides a method for self-assembling and preparing a high-density nanometer phase change structure. The method comprises the steps of: preparing a phase change material film on a medium or a conductive substrate such as a silicon wafer, a quartz sheet and the like, and preparing a uniformly and sequentially arranged nanosphere array by adopting a self-assembling method; adjusting intervals of the nanosphere array by utilizing a plasma or reactive ion etching technology; preparing a sequential, uniform and high-density nanometer phase change structure by regarding the nanosphere array as a mask and utilizing an etching technology. By utilizing the method disclosed by the invention to prepare the high-density nanometer phase change structure, the preparation cost is saved, the preparation efficiency is improved, the power consumption can be reduced, and the photoelectric performance of the device can be improved.

The invention relates to a material in the field of microelectronic technology, and more particularly to a Ge-Cu-Te nano phase change thin film material for a high stability phase change random access memory and a preparation method thereof. The Ge-Cu-Te nano phase change thin film material has an atomic percent composition of GexCu100-2xTex. The Ge-Cu-Te nano phase change thin film material is prepared by depositing a composite target material composed of a GeTe target and a circular pure Cu chip by a high vacuum magnetron sputtering method. The nano phase change thin film material of the invention has high crystallization temperature, which can greatly improve the amorphous thermal stability of the PCRAM; and has high crystal resistance, which can reduce the power consumption of PCRAM.

The invention provides a preparation method and application of photoresponse organogel capable of being used at 80 DEG C. The preparation method of the photoresponse gel without adding a cross-linking agent comprises the following steps: heating a ruthenium-containing monomer and a benzonitrile-containing monomer in 1, 2-propylene glycol for reaction to obtain an initial mixed solution; mixing a comonomer, an initiator and 1, 2-propylene glycol and then mixing the mixture with the initial mixed solution to obtain a prepolymer solution; and heating and polymerizing the prepolymer solution in a dark place to obtain the photoresponse gel without an additional cross-linking agent. The invention further provides a preparation method of the photoresponse gel with an additional cross-linking agent. According to the invention, reversible conversion of gel-sol can be realized through switching of illumination and dark heating conditions, and the photoresponse gel is used for material remodeling. Meanwhile, based on the color difference of a photoresponse unit during ligand coordination and dissociation, the gel prepared by additionally adding a cross-linking agent can realize reversible writing and erasing of different patterns through control of illumination and dark heating conditions, and is expected to be used for information storage and anti-counterfeiting.

The invention is concerned with a kind of phase change film material with chalcogenide in silicon series for phase change storage, belonging to micro-electronics technology field. Si element takes place of Ge element of TeaGebSb100-(a+b) alloy to form TeaGeb-cSicSb100-(a+b) alloy film, and a is from 48 to 60, b is from 8 to 40, the replace scalar c of Si is from 1 to 40 atom percent. This invention has higher crystal resistance than common Ge2Sb2Te5 phase change film, and more higher amorphous / crystalline state change ratio of resistance and more lower amorphous / crystalline state film thickness change ratio and lower melting point. This kind of storage has more higher open / close ratio and stability of piece to reduce writing current of storage and get storage multi-value with higher density.

The invention relates to a preparation method of force response type surface folds with adjustable light transmittance. The method comprises the steps as follows: performing oxygen plasma etching on atransparent elastic substrate to form a hydrophilic layer; coating the surface of the etched elastic substrate with a rigid composite film solution, and drying the surface to form a film; releasing stress after stretching the prepared double-layer film. Regular folds on the surface of a material are obtained with the method. The hydrophilic property of the elastic substrate is changed through ionetching, the folds with regular shapes are formed through pre-stretching after the surface is coated with the rigid molecular solution and the film is formed, the transmittance of the folds for visible light is measured by applying different strains to the folds, and reversible transformation of regulating the light transmittance of the fold surfaces in the large range of 6%-90% is realized. Theoperation method is wide in application range, simple to operate, good in reversibility and capable of realizing large-area preparation and has potential application value in the intelligent window field.

The invention provides a positive electrode material of a lithium ion battery, a preparation method and application of the positive electrode material and the battery. The positive electrode materialincludes positive electrode particles containing a lithium oxide, the positive electrode particles having a crystallized LiMxOy compound and a quasi-crystallized M element oxide in contact with each other, 0 <x <= 2, 0 < y <= 4, and M includes at least one of Mn, Al, Nb, Fe, Co, and Ni. The lithium ion battery using the positive electrode material can have considerable battery capacity and performance, and the positive electrode material can be applied to an aqueous electrolyte, so that the safety performance of the battery using the positive electrode material can be improved.

A method for preparing an oxide film material with a shape memory effect: using pulsed laser deposition technology to prepare a two-phase coexisting BiFe03 film on a high-quality mismatched single crystal substrate; using focused ion beam etching technology to prepare it in the previous step Preparation of pure phase nanostructures in BiFe03 films where two phases coexist. Applications of the thin film nanostructures are also disclosed. The effect of the present invention is to successfully prepare a ferroelectric oxide material with a huge shape memory effect by using epitaxial growth technology and focused ion beam etching means. Electric field, temperature, and stress can all affect the shape memory strain of this material, and its maximum reversible strain is as high as 14%. Since the electric field can also control the shape memory effect of this material, its operating frequency is higher than that of traditional alloy materials. In addition, this shape strain is achieved at the nanoscale, making it possible to replace traditional alloy materials in Sensing, driving and other applications in small size.

The invention discloses a preparation method of an alkyloxy azobenzene photosensitive foam control agent, which belongs to the technical field of textile chemical engineering. 4, 4 '-dihydroxy azobenzene is synthesized by nitrobenzene reduction method from nitrophenol as a raw material, and an azobenzene type photosensitive switch surfactant is obtained by nucleophilic substitution reaction for substitution of hydrogen of hydroxide radical of the 4, 4 '-dihydroxy azobenzene and introduction of an alkyl chain; trans-to-cis reversible isomerization of 4-hydroxy-4 '-alkyloxy azobenzene azobenzene can be completed in the ultraviolet and visible light irradiation, surface alignment compact degree of a foam liquid film can be changed by steric hindrance, foam stabilization and breaking can be controlled reversibly, the alkyloxy azobenzene photosensitive foam control agent can be used as a foam stabilizing agent and a foam breaker to solve the contradiction of different foaming stability needs before and after foam dyeing and finishing, and by recycling of residual foam after the dyeing and finishing, the pollution and waste of chemical reagents can be effectively reduced.

The invention provides a preparation method and application of a light-responsive organic gel that can be used at 80°C; the preparation method of the light-responsive gel without adding a crosslinking agent comprises the following steps: combining a ruthenium-containing monomer and a benzene-containing The cyanonitrile monomer is heated and reacted in 1,2-propylene glycol to obtain an initial mixed solution; the comonomer, initiator and 1,2-propylene glycol are mixed and then mixed with the initial mixed solution to obtain a prepolymer solution; the prepolymer The polymer solution is heated and polymerized in the dark to obtain a photoresponsive gel without adding a crosslinking agent. The present application also provides a preparation method of the photoresponsive gel with an external cross-linking agent. In this application, the reversible transformation of gel-sol can be realized by switching between light and dark heating conditions, which can be used for material remodeling. At the same time, based on the color difference of the photoresponsive unit during ligand coordination and dissociation, the gel prepared by adding a cross-linking agent can realize reversible writing and erasing of different patterns under the control of light and dark heating conditions, which is expected to be used in Information storage and anti-counterfeiting.

The invention discloses a preparation method of a self-assembled model. The method comprises the following steps: providing an organic photoisomerization molecular solution, the organic photoisomerization catalyst comprising a solvent and organic photoisomerization molecules dissolved in the solvent, wherein the organic photoisomerization molecules can be converted into a first structure under theirradiation of ultraviolet light in a first wavelength range and can be converted into a second structure under the irradiation of visible light in a second wavelength range, and the organic photoisomerization molecules having different friction coefficients when being located in the first structure and the second structure respectively; dropwise adding the organic photoisomerization molecular solution to the surface of a highly-oriented pyrolytic graphite substrate; and standing until the solvent in the organic photoisomerization molecular solution is volatilized, so that the organic photoisomerization molecular solution is self-assembled on the highly-oriented pyrolytic graphite substrate to form a self-assembled film. The invention further discloses a self-assembly model. The inventionfurther discloses a self-assembly method of the film with the friction coefficient capable of being adjusted and controlled through light.

The invention provides a side group-functionalized polyamino acid block polymer, which includes an A block and a B block. Compared with the prior art, the present invention uses the A block as a hydrophilic segment, and the B block as a hydrophilic and hydrophobic adjustable segment, and both have different degrees of polymerization, so that block polymers with different molecular weights can be obtained. Thereby forming temperature- and pH-sensitive hydrogels with different phase transition temperatures; at the same time, the block represented by the formula (III-C) in the B block can be protonated and deprotonated to achieve hydrophilic-hydrophobic transition, and then realize sol-gel The reversible transformation of the glue; moreover, the type and quantity of side groups can be changed by controlling the composition of the B block, which is beneficial to the further modification and application of the material; moreover, the polyamino acid block polymer provided by the invention significantly strengthens the material PMMA, The adhesion function of stainless steel and cells expands the application range of temperature-sensitive hydrogels and is beneficial to the application of temperature-sensitive hydrogels in biomedicine.