34results about How to "Implement multi-value storage" patented technology

The invention provides a resistance random access memory based on a vanadium oxide / aluminum oxide laminated structure. The resistance random access memory is composed of a lower electrode, a resistance random layer and an upper electrode to form of the laminated structure, wherein the resistance random layer is of a laminated structure of a vanadium oxide film and an aluminum oxide film. The thickness of each layer is that: the thickness of the lower electrode is 50-200nm, the thickness of the vanadium oxide film is 5-100nm, the thickness of the aluminum oxide film is 1-50nm, and the thickness of the upper electrode is 50-200nm. In a manufacturing method of the resistance random access memory, the vanadium oxide film is manufactured by a radio-frequency sputtering method, and the aluminum oxide film is manufactured by a magnetron sputtering or thermal oxidation method on the vanadium oxide film. The resistance random access memory has the advantage that the resistance random access memory adopts the vanadium oxide / aluminum oxide laminated structure and has twice reset phenomena, three impedance states including a low resistance state, a middle resistance state and a high resistance state can be obtained, resistance value ratio among the resistance states is more than 10 times, in addition, the resistance random access memory is further provided with good retentivity and repeatability.

The present disclosure provides a three-state spintronic device, a storage unit, an array and a read-write circuit. The three-state spintronic device includes from bottom to top: a bottom electrode, a magnetic tunnel junction and a top electrode; the magnetic tunnel junction includes : spin-orbit coupling layer, ferromagnetic free layer, barrier tunneling layer and ferromagnetic reference layer, three localized magnetic domain wall pinning centers and magnetic domain wall nucleation center; modulation of antisymmetric exchange, magnetic domain wall The pinning center is embedded at the interface between the heavy metal and the ferromagnetic free layer; the nucleation center of the magnetic domain wall is set at both ends of the ferromagnetic free layer; the current pulse flows through the spin-orbit coupling layer to generate spin current and inject into the ferromagnetic free layer. The effective field of the spin-orbit torque under the control of the electric field drives the displacement of the domain wall, and the displacement can be modulated by the number of pulses, the pulse width and the direction of the current, and has CMOS process compatibility and high reliability. The present disclosure also provides three-state read and write. The circuit and its ternary network computing application scheme realizes the high-performance GXNOR operation of ternary spintronic devices.

The invention provides a memory array reading method based on unidirectionally-connected memory cells. A memory array comprises multiple word lines, multiple bit lines intersecting with the word lines, multiple unidirectionally-connected memory cells which are arranged at the intersection points of the word lines and the bit lines and connected with the word lines and the bit lines and peripheral reading circuits for reading and writing the corresponding memory cells connected to the same bit lines. The method comprises the steps that first voltage is applied to the word line to which the selected memory cell belongs, and second voltage is applied to the other word lines of the memory array; meanwhile, the second voltage is applied to the bit line to which the selected memory cell belongs, and the first voltage is applied to the other bit lines; the bit line where the memory cell is located is read and written through the corresponding peripheral circuit.

The invention discloses a method for ultrasonically improving the reliability and capacity of a resistive variable memory, which belongs to the field of ultrasonic application. In the present invention, under the action of the electric field generated by two pairs of interdigitated electrodes, the piezoelectric substrate simultaneously excites two surface acoustic waves that vibrate in the XY plane and have the same phase, and each resistive variable memory in the initial ultra-high resistance state in the array is Under the action of the standing wave sound field formed by the superposition of two surface acoustic waves in the middle area, the standing wave sound field stretches the functional layer of the resistive memory on the XY plane, which is conducive to soft dielectric breakdown, and the average voltage required for the "electrical formation" process is significantly reduced , improve storage array reliability. Under the action of the standing wave sound field formed by the superposition of the first surface acoustic wave and the second surface acoustic wave in the middle area, the resistive variable memory in the low resistance state applies a negative voltage to reset the device, and the device returns to the high resistance state, and the device is removed. Ultrasonic signal, the high resistance of the device is further increased, and the normal setting operation is performed on the device, thereby significantly improving the switching ratio of the resistive variable memory and increasing the storage capacity.

The invention provides a resistive memory unit, and relates to the technical field of non-volatile memory devices. The resistive memory unit comprises a substrate, a lower electrode layer, a function layer, an upper electrode layer and an insulation dielectric layer. The lower electrode layer covers the substrate. The insulation dielectric layer covers the lower electrode layer. A trench is arranged on the insulation dielectric layer, wherein the bottom of the trench extends to the lower electrode layer. The upper electrode layer and the function layer are successively in the trench from top to bottom. The function layer directly contacts the lower electrode layer. The upper electrode layer is flush with the surface of the insulation dielectric layer. The function layer is a resistance variable memory layer, is in an upper and lower layer laminated structure, and is formed by laminating an amorphous SnOx layer and a nitrogen oxide MnOxNy layer. The range of x in the amorphous SnOx is between 0 and 2. The range of x and the range of y in the nitrogen oxide MnOxNy are respectively between 1 and 2 and between 0.001 and 2. According to the resistive memory unit provided by the invention, stable multi-value memory is realized, and the memory density and stability of the memory unit can be improved.

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non / crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non / crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.

The invention discloses a circuit and a method for driving a resistive random access memory to realize multi-valued storage by using a capacitor. The circuit consists of a plurality of capacitors which are used for storing electric energy and have different capacitances, a plurality of voltage sources, the resistive random access memory, and a switching circuit, wherein the capacitors are connected to the voltage sources and the resistive random access memory through the switching circuit. The method comprises the following steps of: charging the capacitors having different capacitances to make the capacitors have the same voltage, or charging the capacitors having the same capacitance to make the capacitors have different voltages so as to make the capacitors store different electric energy; and then driving the resistive random access memory by using the capacitors having different electrical energy as signal excitation sources, and changing the resistance state of the resistive random access memory so as to make the resistive random access memory have different resistance states and realize the multi-valued storage. By using the circuit and the method, the multi-valued storage is realized by using a simple circuit to drive the resistive random access memory, and storage with a higher density in the same area is realized.

The invention is concerned with a kind of phase change film material with chalcogenide in silicon series for phase change storage, belonging to micro-electronics technology field. Si element takes place of Ge element of TeaGebSb100-(a+b) alloy to form TeaGeb-cSicSb100-(a+b) alloy film, and a is from 48 to 60, b is from 8 to 40, the replace scalar c of Si is from 1 to 40 atom percent. This invention has higher crystal resistance than common Ge2Sb2Te5 phase change film, and more higher amorphous / crystalline state change ratio of resistance and more lower amorphous / crystalline state film thickness change ratio and lower melting point. This kind of storage has more higher open / close ratio and stability of piece to reduce writing current of storage and get storage multi-value with higher density.

The invention discloses a resistive random access memory capable of realizing multilevel storage. The resistive random access memory capable of realizing the multilevel storage comprises a semiconductor substrate, N-1 groups of double-layer structures and top electrodes on the N-1 groups of double-layer structures, wherein each N-1 group of double-layer structure consists of an electrode and one resistive layer positioned on the electrode; the N-1 groups of double-layer structures are positioned on the substrate and are successively overlaid from bottom to top, wherein N is a positive integer greater than or equal to 3; all odd-number electrodes from bottom to top are connected in parallel to serve as the lower electrode of the resistive random access memory; all even-number electrodes from bottom to top are connected in parallel to serve as the upper electrode of the resistive random access memory. Therefore, according to the resistive random access memory capable of realizing the multilevel storage, which is disclosed by the invention, in a mode that multiple electrodes and the resistive layers are alternatively overlaid, voltages required for each resistive layer to generate resistance change are different, resistance values after the resistance change happens are different, so that the multilevel storage of a memory unit structure is realized, and no additional area is occupied by the memory unit disclosed by the invention because of adopting a longitudinal-overlaying structure.