A Method of Ultrasonic Improving the Reliability and Capacity of RRAM

Abstract

The invention discloses a method for ultrasonically improving the reliability and capacity of a resistive variable memory, which belongs to the field of ultrasonic application. In the present invention, under the action of the electric field generated by two pairs of interdigitated electrodes, the piezoelectric substrate simultaneously excites two surface acoustic waves that vibrate in the XY plane and have the same phase, and each resistive variable memory in the initial ultra-high resistance state in the array is Under the action of the standing wave sound field formed by the superposition of two surface acoustic waves in the middle area, the standing wave sound field stretches the functional layer of the resistive memory on the XY plane, which is conducive to soft dielectric breakdown, and the average voltage required for the "electrical formation" process is significantly reduced , improve storage array reliability. Under the action of the standing wave sound field formed by the superposition of the first surface acoustic wave and the second surface acoustic wave in the middle area, the resistive variable memory in the low resistance state applies a negative voltage to reset the device, and the device returns to the high resistance state, and the device is removed. Ultrasonic signal, the high resistance of the device is further increased, and the normal setting operation is performed on the device, thereby significantly improving the switching ratio of the resistive variable memory and increasing the storage capacity.

Description

technical field [0001] The invention belongs to the technical field of ultrasonic applications, and more particularly relates to a method for ultrasonically improving the reliability and capacity of a resistive variable memory. Background technique [0002] In the electronic information age, the performance of the processor is rapidly increasing every year according to Moore's Law, while the improvement of the memory access speed seriously lags behind the computing speed of the processor, causing the computing power of the computer to reach a bottleneck. In order to solve the above-mentioned "storage wall" problem, it is necessary to develop a new generation of new memory, which needs to have the following characteristics: high storage density, low power consumption, fast access speed, and resistance to repeated erasing and writing. [0003] Resistive variable memory is a new type of memory device, which can change its resistance value by controlling the change of current, s...

AI Technical Summary

Problems solved by technology

[0005] At the same time, the newly prepared RRAM is in the initial ultra-high resistance state. In order to make it work normally, a large voltage pulse needs to be applied between the upper and lower electrodes of the device. This process is called "electrical formation" or "initialization" process. In this process, the high voltage causes soft dielectric breakdown of the functional layer to form conductive filaments. Ultra-high voltage requires complex circuit design and causes high power consumption, which is not conducive to low-power large-scale integration design of storage systems.

Images