Method for ultrasonically improving reliability and capacity of resistive random access memory

Abstract

The invention discloses a method for ultrasonically improving reliability and capacity of a resistive random access memory, which belongs to the field of ultrasonic application. Under the action of anelectric field generated by the two pairs of interdigital electrodes, the piezoelectric substrate excites the two surface acoustic waves which vibrate in the XY plane and have the same phase at the same time, and each resistive random access memory in an initial ultrahigh resistance state in the array is under the action of a standing wave sound field formed by superposing the two surface acoustic waves in the middle area, the standing wave sound field stretches the resistive random access memory functional layer on the XY plane, soft dielectric breakdown is facilitated, the average voltage required in the electrical forming process is obviously reduced, and the reliability of the memory array is improved. The resistive random access memory in the low impedance state applies negative voltage for reset operation under the action of a standing wave sound field formed by superposing the first surface acoustic wave and the second surface acoustic wave in the middle area, the device returns to the high impedance state, the ultrasonic signal is removed, the high resistance of the device is further increased, and normal setting operation is performed on the device. Therefore, the switching ratio of the resistive random access memory is remarkably improved and the storage capacity is improved.

Description

technical field [0001] The invention belongs to the technical field of ultrasonic applications, and more particularly relates to a method for ultrasonically improving the reliability and capacity of a resistive variable memory. Background technique [0002] In the electronic information age, the performance of the processor is rapidly increasing every year according to Moore's Law, while the improvement of the memory access speed seriously lags behind the computing speed of the processor, causing the computing power of the computer to reach a bottleneck. In order to solve the above-mentioned "storage wall" problem, it is necessary to develop a new generation of new memory, which needs to have the following characteristics: high storage density, low power consumption, fast access speed, and resistance to repeated erasing and writing. [0003] Resistive variable memory is a new type of memory device, which can change its resistance value by controlling the change of current, s...

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Problems solved by technology

[0005] At the same time, the newly prepared RRAM is in the initial ultra-high resistance state. In order to make it work normally, a large voltage pulse needs to be applied between the upper and lower electrodes of the device. This process is called "electrical formation" or "initialization" process. In this process, the high voltage causes soft dielectric breakdown of the functional layer to form conductive filaments. Ultra-high voltage requires complex circuit design and causes high power consumption, which is not conducive to low-power large-scale integration design of storage systems.

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