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Memory cell, control method of memory cell, and memory chip

A technology of storage unit and control method, which is applied in the direction of information storage, static memory, digital memory information, etc., to increase storage density and realize multi-value storage

Inactive Publication Date: 2020-12-15
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, under the existing technology, the size of the phase change memory unit is often sacrificed to make it have a larger storage capacity, but this will undoubtedly limit the pace of development of the phase change memory to a smaller size

Method used

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  • Memory cell, control method of memory cell, and memory chip
  • Memory cell, control method of memory cell, and memory chip
  • Memory cell, control method of memory cell, and memory chip

Examples

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Embodiment Construction

[0035] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same reference numerals.

[0036] It should be noted that the thickness and shape in the drawings of the present invention do not reflect the real scale, and the purpose is only to schematically illustrate various implementation contents of the present invention.

[0037] The embodiments of the present invention are used to solve the problem that the storage capacity of the storage unit in the p...

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Abstract

The invention provides a memory cell including a first electrode, a heater including a plurality of sub-heaters, a phase-change material layer, and a second electrode; wherein the phase-change material layer is located between the second electrode and the first electrode and is electrically connected with the second electrode, one end of each sub-heater is electrically connected with the first electrode, and the other end of each sub-heater is electrically connected with different areas of the phase-change material layer. At least two sub-heaters in the plurality of sub-heaters are different in heat output to the phase-change material layer within the same time, so that the memory cell can present at least three different resistance states, and each resistance state of the memory cell canrepresent binary data respectively. Therefore, multi-valued storage is realized on the premise of not changing the size of the memory cell, and the storage density of the memory cell is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a storage unit, a control method of the storage unit and a storage chip. Background technique [0002] Phase change memory (PCM) is a non-volatile memory device that uses reversible phase transitions of materials to store information. The basic storage principle of phase change memory is to apply voltage or current pulse signals of different widths and heights on the device unit, so that the physical phase state of the phase change material changes, that is, crystalline state (low resistance state) and amorphous state (high resistance state). Reversible phase transitions and mutual conversions occur between states), so as to realize the writing ("1") and erasing ("0") operations of information. [0003] However, in the prior art, the size of the phase-change memory unit is often sacrificed to make it have a larger storage capacity, but this will undoubtedly limit the pace...

Claims

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Application Information

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IPC IPC(8): G11C13/00G11C11/56
CPCG11C13/0069G11C13/0004G11C11/5678G11C2013/008
Inventor 喻丹杨芳
Owner YANGTZE MEMORY TECH CO LTD
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