Tri-state spinning electronic device, storage unit, storage array and read-write circuit
A spintronic device and spin-orbit coupling technology, applied in static memory, information storage, digital memory information, etc., can solve the problem of increasing calculations
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[0071] The disclosure provides a three-state spintronic device, a storage unit, a storage array, and a read-write circuit. The three-state spintronic device includes from bottom to top: a bottom electrode, a magnetic tunnel junction and a top electrode; a magnetic tunnel junction Including: spin-orbit coupling layer, ferromagnetic free layer, barrier tunneling layer and ferromagnetic reference layer, three local magnetic domain wall pinning centers and magnetic domain wall nucleation centers; local magnetic domain wall pinning centers Embedded in the spin-orbit coupling layer and in contact with the ferromagnetic free layer; the magnetic domain wall nucleation centers are set at both ends of the ferromagnetic free layer; current pulses are injected into the spin-orbit coupling layer to generate spin currents to drive the ferromagnetic The magnetic domain walls in the free layer move to switch the resistive state. The disclosure can effectively drive domain wall movement and di...
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