39 results about "Ge element" patented technology

The invention discloses an infrared night-vision goggle based on a GeSn infrared detector, and mainly aims to solve the problem that the existing infrared night-vision goggle is of low light sensing efficiency. The infrared night-vision goggle comprises an optical system, a detector, a signal processor and a display. The detector is a GeSn infrared detector, and comprises a substrate (1), a lower electrode (2), an absorption area (3) and an upper electrode (4), wherein the absorption area (3) is made of a GeSn material of which the general formula is Ge1-xSnx, x is a component of Sn, and 0<=x<=0.25. As the Sn element is added to the Ge element to form a relaxation intrinsic GeSn single crystal, the energy band structure of GeSn is changed from direct band gap to direct band gap while the forbidden bandwidth is decreased. Therefore, the light sensing frequency is increased, the red shift of the absorption edge is adjustable, and the light sensing efficiency and absorption wavelength range of the infrared night-vision goggle are improved.

The invention relates to a novel Ge-heavily-doped photosensitive fiber, which is doped with 46% to 54% Ge element in the core layer of an optical fiber with an NA value of 0.25 to 0.31. The Ge-heavily-doped photosensitive fiber has large mode field diameter and small attenuation, and can satisfy the requirement for signal transmission and sensing, so that a fiber grating can be directly etched on a certain section of an optical fiber segment and the rest section serves as the optical fiber for transmitting signal. The invention has a significant characteristic that the photosensitive fiber has very high photosensitive performance, and the fiber grating can be directly etched in the core of the optical fiber without hydrogen loading treatment, etc. The invention can save a great amount of processing program and time and can provide excellent sensing element for an optical fiber sensor system.

The invention provides a PMOS transistor and a manufacturing method of the PMOS transistor. When source electrode areas and drain electrode areas of the PMOS transistor are formed, a method that a first stress adjusting layer, a second stress adjusting layer and a stress maintaining layer sequentially grow in an epitaxial mode is adopted. The lattice constant of the first stress adjusting layer and the lattice constant of the second stress adjusting layer gradually increase. When the second stress adjusting layer is formed in an epitaxial mode, an element with the lattice constant larger than that of the Ge element for doping, so that the second stress adjusting layer forms most of the source electrode areas and the drain electrode areas, and larger pressure stress is provided for a channel so that the channel can have higher carrier mobility and work current of a device can be improved; the first stress adjusting layer between the second stress adjusting layer and a substrate serves as a stress buffering layer, and defects caused by too large lattice mismatch between the second stress adjusting layer and the substrate are reduced; a sandwich structure formed by the first stress adjusting layer and the second stress adjusting layer which are spaced is adopted, so that the defects caused by too large lattice mismatch between the second stress adjusting layer and the substrate are further reduced.

A quartz cladding large-power-transmission dispersion optical fiber and a manufacturing method thereof relate to the technical field of optical communication and related sensing devices. The dispersion optical fiber is composed of a core layer, a first quartz cladding and a second quartz cladding which are successively arranged from inside to outside. The core layer is doped with Ge element; the refractivity of the core layer changes in a gradual manner; and furthermore distribution power exponent is 1.5-3.3. The first quartz cladding contains bubbles and has a light scattering function. The refractivity of the second quartz cladding is higher than that of the first quartz cladding. The quartz cladding large-power-transmission dispersion optical fiber and the manufacturing method have advantages of enduring relatively high power and relatively high temperature, improving stability and reliability of the optical fiber, and effectively settling a color change problem of the optical fiber in illumination.

The invention provides an MOSFET with a SiGe channel and a forming method of the MOSFET. The forming method includes the following steps of providing a substrate with a Si layer at the top, injecting atoms, molecules, ions or plasmas containing Ge elements into the surface layer of the Si layer so that the SiGe layer can be formed, forming a gate stacking structure on the upper portion of the SiGe layer, and forming a source and a drain on the two sides of the gate stacking structure. According to the forming method of the MOSFET, the MOSFET with the SiGe channel can be formed, the SiGe channel is thin, crystalline quality is good, and accordingly the MOSFET has good electrical property and the method has the advantages of being simple, easy to carry out and low in cost.

The invention relates to a Ge-containing low-quenching sensitive aluminum alloy. Aluminum alloy is subjected to micro-Ge alloying treatment; based on the characteristic that binding energy of Ge element and vacancy is far more than that of elements of Zn, Mg, Cu and the like and the vacancy is utilized, the Ge element, when solid solution is quenched, is added into the inside of the alloy and is preferentially combined with the vacancy to prevent the diffusion of Zn, Mg, Cu and other solute atoms of the alloy at a low solid solution quenching speed and the precipitation of a coarse second phase; and therefore, the full hardening of the aluminum alloy is improved effectively, the quenching sensitivity of the aluminum alloy is reduced, and a quenching tissue with full solid solution is provided for obtaining dispersion-strengthened phase in subsequent aging. The Ge-containing low-quenching sensitive aluminum alloy can effectively reduce the quenching sensitivity of the aluminum alloy and improves the full hardening of the aluminum alloy, the saturation of the solute atom solid solution of the alloy at the low quenching speed and the mechanical property after the aging treatment. The Ge-containing low-quenching sensitive aluminum alloy provides a reliable aluminum alloy structural material for meeting the needs for large-scale heavy plates and large members in aerospace and other fields.

The invention is a measuring method for fiber stress double-refraction value of stress deflection and maintaining fiber in fiber interference communication and fiber sensor fields. The technology includes following steps: selects out the samples in stress area and core area, measures the content of B element in stress sample, measures the content of element Ge in core area; plates conductive film with thickness from 1 micron to 2 micron on the end surface of the fiber, scans the surface used as the atom lining by the electron probe device and carries on line scan to the Ge element, eliminates the impurities and spots on the surface; the image is inputted into the MATLAB project software, works out the stress double-refraction value through stress double-refraction formula and stress area impurities density.

The invention provides a fin-shaped field effect transistor with a SiGe channel and a forming method of the fin-shaped field effect transistor. The forming method includes the following steps of providing a substrate, forming a Si fin-shaped structure on the upper portion of the substrate, injecting atoms, molecules, ions or plasmas containing Ge elements into the Si fin-shaped structure so that the SiGe layer can be formed, and forming a gate stacking structure on the upper portion of the SiGe layer. According to the forming method, the FinFET with the SiGe channel can be formed, the SiGe channel is thin and good in quality, and accordingly the forming method has the advantages of being simple, easy to carry out and low in cost.

The invention provides a FinFET with a SiGe source region and a SiGe drain region and a forming method of the FinFET. The method includes the following steps of providing a substrate, forming a Si fin-shaped structure on the upper portion of the substrate, forming gate stacking or a fake gate on the upper portion of the Si fin-shaped structure, forming openings of the source region and the drain region on the two sides of the gate stacking or the fake gate, exposing the Si fin-shaped structure at the opening positions, and injecting atoms, molecules, ions or plasmas containing Ge elements into the Si fin-shaped structure so that SiGe layers can be formed at the opening positions. According to the forming method of the FinFET, the FinFET with the SiGe source region and the SiGe drain region can be formed, the SiGe source region and SiGe drain region are thin, crystalline quality is good, and accordingly the FinFET has good electrical property, and the method has the advantages of being simple, easy to carry out and low in cost.

The invention discloses a low quenching sensitive aluminum alloy added with Ag and Ge at the same time. The aluminum alloy is subjected to alloying treatment of trace Ag and Ge elements. On the one hand, the Ag and a vacancy have higher binding energy by using the characteristic that the binding energy of the Ge element and the vacancy is far greater than that of elements such as Zn, Mg, Cu and the like and the vacancy, and the Ge and Ag elements added into the alloy are first bond with the vacancy during solid solution quenching so as to prevent the dispersion of solvent atoms of Zn, Mg, Cu and the like in the alloy and the separation of a thick second phase at a low solid solution quenching speed, effectively improve the quenching property of the aluminum alloy, reduce the quenching sensitivity of the aluminum alloy and provide a complete solid solution quenching tissue for obtaining a dispersed strengthening phase for follow-up ageing; and on the other hand, the added Ag can play a role in reinforcement when the Ge is added by using the effect that the Ag can produce solid solution reinforcement and separation promotion in the aluminum alloy. A low quenching sensitive aluminum alloy structural material is provided for large-scale thick plates and large members in aerospace and other fields.

The invention discloses Sn-Sb-Se chalcogenide glass. The formula of the chalcogenide glass is SnxSbySez, wherein x, y and z respectively represent the mole number of Sn, Sb and Se, x=6-12, y=10-20, and z=68-82. In the microstructure of the chalcogenide glass, the percentage of the bond number of Sn-Se bonds accounting for the total chemical bond number is 16.45-32.67%, the percentage of the bond number of Sb-Se bonds accounting for the total chemical bond number is 20.08-58.37%, and the balance is the percentage of the bond number of Se-Se bonds accounting for the total chemical bond number. The Sn-Sb-Se chalcogenide glass has the advantages that the Sn-Sb-Se chalcogenide glass does not contain toxic As element and expensive Ge element and is simple and practical in preparation method, the forming area of the Sn-Sb-Se chalcogenide glass mainly concentrates on a selenium-rice area, the refractive index of the Sn-Sb-Se chalcogenide glass at a 4-micrometer waveband position is 2.59-2.86, third-order nonlinear refractive index can reach up to 10.15*10<-18>m<2>/W, the Sn-Sb-Se chalcogenide glass is good in mid-infrared and far-infrared transmission capacity and near-infrared transmission capacity, and a foundation is laid for the infrared device design and manufacturing of the Sn-Sb-Se chalcogenide glass and application of the Sn-Sb-Se chalcogenide glass to the optical field.

The invention relates to the technical field of metal alloy materials, and particularly relates to a preparation method of casting high-strength rapid-corrosion magnesium alloy. The method comprises the following steps: (1) correspondingly preprocessing a magnesium ingot and an aluminum ingot; (2) preprocessing germanium particles; (3) smelting the preprocessed magnesium ingot and the aluminum ingot; (4) adding the germanium particles after smelting so as to obtain a smelted material; and (5) cooling the smelted material; then pouring; and naturally cooling the casting ingots until room temperature is reached, and thus obtaining the casting high-strength rapid-corrosion magnesium alloy, wherein the casting high-strength rapid-corrosion magnesium alloy comprises the following components inpercentage by weight: 2-8% of Al, 0.5-7% of Ge, and the balance magnesium. According to the method, the Al and Ge elements are fully utilized to improve the strength and corrosion rate of the magnesium alloy; the alloy elements of few types are added, and few alloy elements are added, so that the mechanical performance and the corrosion rate can be obviously improved.

The invention is concerned with a kind of phase change film material with chalcogenide in silicon series for phase change storage, belonging to micro-electronics technology field. Si element takes place of Ge element of TeaGebSb100-(a+b) alloy to form TeaGeb-cSicSb100-(a+b) alloy film, and a is from 48 to 60, b is from 8 to 40, the replace scalar c of Si is from 1 to 40 atom percent. This invention has higher crystal resistance than common Ge2Sb2Te5 phase change film, and more higher amorphous/crystalline state change ratio of resistance and more lower amorphous/crystalline state film thickness change ratio and lower melting point. This kind of storage has more higher open/close ratio and stability of piece to reduce writing current of storage and get storage multi-value with higher density.

The invention discloses an oxide near-infrared light-emitting material, a preparation method thereof and a light-emitting device. The near-infrared light-emitting material comprises an inorganic compound, wherein the chemical formula of the inorganic compound is AxByCzOqDp; wherein A is one or a combination of more than two of elements of Mg, Ca, Sr, Ba, Lu, Y, Gd or La; B is one or a combination of more than two of Sc, In, Ga, Mg, Zr, Ti, Hf, Sn, Lu, Y, Gd or La; C is one or a combination of more than two of Al, Si or Ge elements; O is an oxygen element; D is a Cr element; 0.7 < = x < = 1.3, 0.7 < = y < = 1.3, 1 < = Z < = 3, 5 < = q < = 7, and 0 < p < = 0.3. The emission peak wavelength of the near-infrared light-emitting material is about 930 nm, the half-peak width is about 210 nm, the near-infrared light-emitting material can be efficiently excited by blue light, and the chemical stability and the thermal stability are good.

The invention discloses a Ge (germanium) element compensation method for CdGeAs2 single crystal growth. The method adopts a growth device comprising a single crystal growth crucible, a germanium element compensation device and a six-temperature-zone growth furnace for controlling Ge element compensation for CdGeAs2 single crystal growth. A high-purity CdGeAs2 multi-crystal raw material is put in acrucible provided with a Ge element compensation device for vacuum sealing and then put in the six-temperature-zone growth furnace, CdGeAs2 single crystal growth and Ge element compensation are realized through accurate temperature control, so that Ge elements at the upper and lower ends of the grown single crystal are uniform, and the phenomenon of inconsistent properties formed by different Geelements in the single crystal is avoided. The method is easy to implement, the utilization rate of the single crystal is effectively increased, and the growth cost is reduced.