Heating electrode material for phase transformation memory and preparing method

A phase change memory and heating electrode technology, applied in the field of microelectronics, can solve the problems of stress mismatch and insufficient heating efficiency, and achieve the effects of reducing power consumption, improving heating efficiency and good adhesion

Active Publication Date: 2011-07-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Adding a heating electrode between the electrode and the phase change material is considered to be a relatively simple and feasible method. Currently, the commonly used heating electrode materials include W (IEDM, 897, 2003), TiN (IEDM, 901, 2003), TiON ( Jpn.J.Appl.Phys., 43 (8A): 5243, 2004) and TiAlN, etc., but both have great shortcomings in some aspects, such as the stress mismatch problem with the phase change material, the heating efficiency is not high enough, etc. , can not well meet the requirements of current devices

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  • Heating electrode material for phase transformation memory and preparing method
  • Heating electrode material for phase transformation memory and preparing method
  • Heating electrode material for phase transformation memory and preparing method

Examples

Experimental program
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Effect test

Embodiment 1

[0021] The Ge-W-N heating electrode material was prepared by double-target magnetron co-sputtering. Prepare two independent pure component Ge targets and W targets, the purity of the targets is greater than 99.99% (atomic percentage), and then adopt the method of double-target magnetron co-sputtering, and simultaneously inject high-purity Ar gas and N 2 Gas, the specific process parameters are as follows: Ge target adopts radio frequency power supply, power is 200W; W target adopts DC power supply, power is 100W; sputtering pressure is 0.2Pa; sputtering time is 10min; 2 The flow ratio can adjust the film preparation rate ( figure 1 ) and sheet resistance ( figure 2 ). by right figure 1 and 2 After analysis, Ar / N 2 When the ratio is 1, the resistance of the thin film is too high, much higher than the resistance of the crystalline phase change material in the phase change memory, and close to the resistance of the amorphous phase change material, which will cause the inab...

Embodiment 2

[0023] The Ge-N heating electrode material was prepared by magnetron sputtering of Ge target. Prepare a Ge target with pure components, the purity of the target is greater than 99.99% (atomic percentage), and then use radio frequency magnetron sputtering to inject high-purity Ar gas and N at the same time during the sputtering process. 2 gas, by changing Ar and N 2 The flow ratio can adjust the composition and preparation rate of the thin film, thereby preparing a series of Ge-N heating electrode materials with different compositions.

Embodiment 3

[0025] The Ge-Ti-N heating electrode material was prepared by double-target magnetron co-sputtering. Prepare two separate Ge targets and Ti targets with pure components, the purity of the targets is greater than 99.99% (atomic percentage), and then use the double-target magnetron co-sputtering method to simultaneously inject high-purity Ar gas and N 2 gas, by changing the sputtering power of Ge target and Ti target and Ar and N 2 The flow ratio can adjust the composition and preparation rate of the thin film, thereby preparing a series of Ge-Ti-N heating electrode materials with different compositions.

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Abstract

The invention relates to a heating electrode material for phase varying memory and the preparing method thereof, where the heating electrode material is a heating electrode material at least containing Ge element whose general formula is one of GexWyN1-x-y, GexTiyN1-x-y, GexWyO1-x-y and GexTiyO1-x-y, where x and y are atomic percents of elements and 0<x<=1, 0<=y<1, and 0<x+y<=1; the preparing method adopts any one of the processes: sputtering, evaporating, atomic layer deposition, chemical vapour deposition, and metallic organic matter thermal decomposition or laser auxiliary deposition, and as compared with traditional heating electrode materials such as W, TiN, TiON and TiAlN, the Ge-base heating electrode material of the invention has advantages of adhesive property to phase varying material, high resistance, etc, able to raise heating efficiency of devices and reduce device power losses.

Description

technical field [0001] The invention relates to a heating electrode material and a preparation method that can be used in a phase change memory, more precisely, it relates to a composition design and a preparation method of a Ge-based heating electrode material. Higher advantages, thereby improving the heating efficiency of the device and reducing the power consumption of the device, belong to the field of microelectronic technology. Background technique [0002] Phase change memory technology is based on Ovshinsky's proposal in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and early 1970s (Appl. Phys. Lett., 18, 254-257, 1971) The idea that the phase change film can be applied to the phase change storage medium is established, and it is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 刘波宋志棠封松林陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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