146results about How to "Improve photosensitivity" patented technology

The invention relates to an imaging method which uses a black white camera to shoot color images and a device, the saturation regulatory factor value range is: 0.5-3; the luminance gain value range is: 0.5-3, under the condition is still relative to a camera in the environment without influence of external light or with influence of external light and during the shooting object is in a shot course of synthesizing color images, through a light source luminous intensity adjusting circuit, the luminance of a red LED lamp annular light source group, a green LED lamp annular light source group, a blue LED lamp annular light source group can be adjusted independently to adjust white balance; during shooting, each group of light source can be opened or closed independently through a light source luminescence sequencing circuit; when the light source is prepared, the camera is triggered to shoot images through a control circuit. By adopting the method and the structure, an imaging method and a device which use a black white camera to shoot color images with real color, without light filter, high lminous sensitivity for satisfying tip application are provided.

The invention provides an optical image capturing lens, which from an object side to an image side in turn comprises a first lens with positive flexion force, a second lens with negative flexion force, a third lens which has an object side surface and an image side surface that are both non spherical surfaces, and a fourth lens which has an image side surface that is a concave surface, has an object side surface and the image side surface that are both non spherical surfaces, and has at least one inflection point disposed on at least one of the object side surface and the image side surface. The optical image capturing lens is additionally provided with an aperture and an electronic light sensing element for imaging of captured object; the aperture is disposed between the captured object and the second lens; and the electronic light sensing element is disposed on the imaging surface.

The invention discloses a method for manufacturing a semiconductor device. The method comprises the following steps of: providing a semiconductor substrate, wherein a protrusion structure is arranged on the semiconductor substrate; depositing a first dielectric layer and an etching barrier layer on the semiconductor substrate in turn by adopting a deposition process, wherein upper surfaces of theetching barrier layer and the first dielectric layer at corresponding positions of the protrusion structure are higher than those at other positions; forming second dielectric layers with the same upper surface at different positions on the etching barrier layer by adopting a spin-coating process; etching the second dielectric layer to expose the highest point of the etching barrier layer by adopting a first etching process; and etching the second dielectric layer, the etching barrier layer and the first dielectric layer by adopting a second etching process until the etching barrier layer is completely removed. In the method, the thicknesses of the residual first dielectric layer at different positions on the whole wafer are the same, and the thickness of the first dielectric layer can bereduced. Therefore, the aim of improving the photosensitivity of the semiconductor device is fulfilled.

A kind of optical sensing device includes a display panel and a optical sensing controller. The display panel includes a display area, a non-display area, and several sub-pixels and at least one void sub-pixel. The non-display area circles the display area. The sub-pixels are set in the display area to display the image. Besides, the void sub-pixel is also set in the display area and possesses an optical sensing subassembly. The optical sensing controller and optical subassembly are coupled.

A photoelectric conversion circuit has: a photoelectric conversion element that produces a detection current commensurate with the amount of light received thereby; a capacitor having one end connected to one end of the photoelectric conversion element, the one end of the capacitor from which a terminal voltage commensurate with the integral of the detection current is drawn; and an amplifier that receives the terminal voltage of the capacitor and produces an amplified signal commensurate with the terminal voltage thus received. The photoelectric conversion circuit outputs a final optical signal (an output current) by using the amplified signal of the amplifier. As a current path that can serve as a charging / discharging path of the capacitor, the photoelectric conversion circuit includes only a current path along which the photoelectric conversion element is located. With this configuration, it is possible to enhance responsivity to light and improve the S / N ratio of a received optical signal by making the most of electric power obtained from a photoelectric conversion element.

The conventional avalanche photodiodes are not easy to be fabricated, because if the light absorption layer is in un-doped type, the bias voltage during operation is high, and if the light absorption layer is only slightly doped, the doping amount thereof is hard to be controlled. To this end, the invention provides an avalanche photodiode comprises: a substrate of a first conductivity type; and an avalanche multiplication layer, a light absorption layer, and a window layer which are sequentially laminated from the substrate, wherein a part of the window layer is a region of a second conductivity type, and the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer.

The invention discloses a thermal polymerization process of a PQ / PMMA photopolymer material, the PQ / PMMA photopolymer material and a holographic optical disc thereof. The thermal polymerization process comprises the following steps: weighing and proportioning raw materials including MMA, AIBN and PQ according to a preset mass ratio, and oscillating and uniformly mixing the proportioned mixture to obtain a mixed solution of the raw materials; carrying out prepolymerization stirring on the uniformly mixed solution to obtain a viscous substance; and pouring the viscous substance into a mold, baking the viscous substance to change the viscous substance into a solidified PQ / PMMA photopolymer material, and then removing the mold. From the perspective of a material preparation thermal polymerization process, the optical properties, such as diffraction efficiency and photosensitive sensitivity, of the material are further improved, so that the material can be better applied to optical holographic storage.

The invention relates to a mixed multispectral photosensitive pixel group, a photosensitive device and a photosensitive system. The mixed multispectral photosensitive pixel group comprises at least one photosensitive pixel of chemical coating and at least one photosensitive pixel of semiconductor. In the invention, the photosensitive pixel of chemical coating is combined with the photosensitive pixel of semiconductor to generate the mixed multispectral photosensitive pixel so that a plurality of color signals and other spectrum signals can be simultaneously obtained, incident photon energy can be maximally used and an upper bound of a photoelectric conversion efficiency theory can be or almost be reached. Images of other spectrums, such as an ultraviolet image, a near infrared image and a far-infrared image, can be acquired and simultaneously colors can be completely reconstructed.

A method of manufacturing a touch control display device includes the following steps: forming a sensing element on a substrate, and forming a sensing signal line electrically connected with the sensing element; the step of forming the sensing element includes: forming a semiconductor layer on the substrate, the semiconductor layer including a semiconductor pattern of the sensing element; forming a gate insulating layer on the semiconductor layer; forming a first conductor layer on the gate insulating layer; forming an interlaye insulating layer on the gate insulating layer; performing a tempering process; after the tempering process, removing the interlayer insulating layer in a gate predetermined region; removing the first conductor layer in the gate predetermined region; forming a gate in the gate predetermined region; and forming a second conductor layer, wherein the second conductor layer includes a source electrode and a drain electrode of the sensing element that are electrically connected with the semiconductor pattern of the sensing element.

A display device provided with a signal transmitting mechanism, which has reduced number of pins of an FPC substrate to be connected with a TFT substrate or eliminates such pins and is easily applicable even to a small device. The display device is provided with a light receiving element (90) formed on the TFT substrate of a liquid crystal panel (2), a receiving circuit (100), a display control circuit (200), a video signal line drive circuit (300), a scanning signal line drive circuit (400), a display section (500), and white LEDs (40a-40c) and a LED drive circuit (51) included in a backlight section (3). The LED drive circuit (51) drives a white LED (40) which emits light by an optical (modulation) signal (LS) corresponding to a video signal (VS) given from the external of the device. The receiving circuit (100) generates (demodulates) the video signal (VS) from the signal received through the light receiving element (90).

The invention provides a CMOS (complementary metal oxide semiconductor) image sensor and a manufacturing method thereof. The CMOS image sensor comprises a photodiode, a first micro lens and a metal connection layer, wherein the first micro lens is used for focusing the incident light to a position where the photodiode is arranged, and the metal connection layer is positioned between the photodiode and the first micro lens and exposes at least part of the photodiode. The CMOS image sensor further comprises a second micro lens which is arranged between the first micro lens and the photodiode and positioned outside the metal connection layer. Since the second micro lens is additionally arranged between the first micro lens and the photodiode, luminous sensitivity of the CMOS image sensor is improved with manufacturing cost barely increased.

The invention discloses an optical module and a mobile terminal, the optical module comprises a collimator, a photosensitive unit and a wiring structure, the photosensitive unit is arranged on the surface of one side of the collimator, and the wiring structure is arranged on the surface of the side, deviating from the collimator, of the photosensitive unit. The photosensitive unit and the wiring structure are directly formed on the surface of one side of the collimator. Therefore, the photosensitive unit and the wiring structure do not need to be bonded with the collimator through an adhesive,and a bearing substrate does not need to be added for forming the photosensitive unit and the wiring structure, so that the thickness of the whole optical module is reduced, and the occupied space ofthe optical module is smaller. Meanwhile, after the adhesive between the photosensitive unit and the collimator and the adhesive between the wiring structure and the collimator are omitted, the distance between the photosensitive unit and the display screen of the mobile terminal and the distance between the wiring structure and the display screen of the mobile terminal are smaller, so that the signal strength is higher, and the photosensitive efficiency of the optical module is higher.

Provided is a production method for a photoinitiator GR-FMT. The production method includes the following steps: adding dimethylbenzene and 2,5- dimethoxy tetrahydrofuran to a reaction kettle with inert atmosphere, cooling to -4 - 5 DEG C, then slowly dropwise adding 2,4-two fluoroaniline, heating to 50-60 DEG C, and maintaining the temperature for 5-10 hours; adding dimethylbenzene, heating to 140-145 DEG C for distillation; adding titanocene dichloride; cooling to -10- 40 DEG C, dropwise adding a catalyst of organic alkali amino lithium salt, reacting and synthesizing to obtain reaction liquid of the photoinitiator GR-FMT at -10 - 40 DEG C; heating to 15-30 DEG C, and chromatographing; maintaining the temperature and crystallizing; chromatographing, washing with dimethylbenzene, and draining to obtain wet product; and vacuum drying and obtaining the photoinitiator GR-FMT. The production method has the advantages of being fast in curing speed and not requiring heating.

The invention provides a novel n type semi-insulating GaAs ohmic contact electrode material and a method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material. According to the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material, an undoped n type semi-insulating GaAs substrate is adopted to serve as an electrode bottom layer, two electrode areas on the substrate are plated with Co-doped amorphous carbon (a-C) films with the pulsed laser deposition method, the amorphous carbon films are plated with Ag with the vacuum heat evaporation method, and then the novel n type semi-insulating GaAs ohmic contact electrode material is obtained. According to various data detection results, the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the I-V curve of an electrode has good linear relation and symmetric relation, all performance indexes meet requirements of stable contact electrodes, the luminous sensitivity is high, and the material can be successfully applied to devices relevant to n type semi-insulating GaAs; compared with a preparing technology in the prior art, the method for preparing the novel n type semi-insulating GaAs ohmic contact electrode material has the advantages that the processes are simple, cost is low, and the economic benefit is good.