163results about How to "Lower ohmic resistance" patented technology

Provided is a weld (3) between a first material (1) and a second material (2), the first material (1) being a first metallic material, and the second material (2) being a second metallic material, the weld (3) has a width (4) between 0.5mm and 7mm, the weld (3) comprises at least one microweld (8), the microweld (8) forms a welding pattern (5) defined parallel to a surface (6) of the first material (1), and the microweld (8) has a characteristic feature size (7) of between 20mum and 400mum.

The invention discloses an all-solid-state lithium-air battery and a preparation method and application thereof. The all-solid-state lithium-air battery provided by the invention comprises a lithium metal anode, a porous ceramic support body, a compact electrolyte thin film, a porous cathode thin film, a sealing material, a current collector and a lead, wherein the porous support body is made of garnet type lithium-ion solid electrolyte material; in an air electrode catalyst and permeation holes of the lithium metal anode, a three-phase boundary for battery reaction is expanded, and the battery polarization resistance is reduced; the thickness of the battery electrolyte thin film is smaller than 30 micrometers, a lithium ion transmission path is shortened, and the battery ohmic resistance is reduced; and the battery is a tubular structure with a closed end, the lithium metal anode is poured into a tube, and the battery is easy to seal and is easy to work in different conditions. The all-solid-state lithium-air battery prepared according to the invention has the advantages of high charging-discharging capacity, high rate performance, high cycle stability, wide working temperature range and the like, and is applicable to the field of various mobile electronic devices and power batteries.

The invention discloses a solid oxide fuel cell composite electrolyte film containing a zirconia based electrolyte film and a ceria based electrolyte film, wherein the zirconia based electrolyte film is deposited on an anode substrate, and can effectively isolate the electronic conductivity, the ceria based electrolyte film is deposited on the zirconia based electrolyte film, can effectively isolate chemical reaction of a cathode and the zirconia based electrolyte film and element diffusion, and can improve the contact properties of a cathode / electrolyte interface; the composite electrolyte films are prepared by a magnetron sputtering method, reaction of zirconia and ceria based electrolytes can be avoided, and by use of the composite electrolyte film, diffusion of gases at both sides of the electrolytes can be effectively isolated, the ohmic resistance is reduced, and the cell performance is improved.

A torsion spring for an electro-mechanical switch is presented. The torsion spring comprises a set of tines including at least one tine extending from the free end of the armature of a switch. A terminus portion is rotatably suspended between the tines, and includes a conducting transmission line, at least a portion of which is exposed for electrical contact. The conducting transmission line has a length selected such that the exposed portion of the transmission line forms a circuit between the input and output of the micro-electro-mechanical switch when the micro-electro-mechanical switch is urged into a closed position, with the terminus portion rotating via the tines to form a conformal connection between the exposed portion of the conducting transmission line and the input and output of the switch, thus optimizing the electrical flow therebetween. The switch is also applied to MEMS devices.

The invention discloses a method for improving extended wavelength gallium indium arsenide detector etching damage which is provided with a whole set of chip preparation etching processes. The methodincludes the steps: (1) depositing a mask etched by silicon nitride; (2) performing heat treatment in the nitrogen environment; (3) transferring table top images; (4) etching an N groove; (5) forminga table top; (6) removing etching damage. The method has the advantages that the mask etched by the silicon nitride is deposited, the heat treatment is performed in the nitrogen environment, materialdamage can be repaired, complex center density is reduced, material quality is improved, dark current of devices is reduced, hole carrier density can be increased, P-electrode ohmic contact stabilityis facilitated, resistance is reduced, a table top forming process includes gas is etched by the aid of chlorine methane, hydrogen decomposed by the methane in the plasma etching process can passivatedangling bonds formed by etching, and non-radiative recombination center density in materials is reduced. According to an etching damage removing process, damage layers of etching surfaces can be removed, the non-radiative recombination center density is reduced, subsequent passivation effects are enhanced, and the method is applicable to preparation of a high-performance short wave infrared gallium indium arsenide detector.