Method for self-assembling and preparing high-density nanometer phase change structure

Abstract

Theories and experiments show that energy needed by reversible phase change can be reduced through reduction of a phase change region, and the purpose of reducing power consumption can be further realized. The traditional preparation of the high-density nanometer structure needs a complex technology with multiple steps and precise nanometer exposure, is long in preparation period and low in efficiency. The invention provides a method for self-assembling and preparing a high-density nanometer phase change structure. The method comprises the steps of: preparing a phase change material film on a medium or a conductive substrate such as a silicon wafer, a quartz sheet and the like, and preparing a uniformly and sequentially arranged nanosphere array by adopting a self-assembling method; adjusting intervals of the nanosphere array by utilizing a plasma or reactive ion etching technology; preparing a sequential, uniform and high-density nanometer phase change structure by regarding the nanosphere array as a mask and utilizing an etching technology. By utilizing the method disclosed by the invention to prepare the high-density nanometer phase change structure, the preparation cost is saved, the preparation efficiency is improved, the power consumption can be reduced, and the photoelectric performance of the device can be improved.

Description

technical field [0001] The invention relates to the relevant field of semiconductor devices, in particular to a method for preparing a high-density nanometer optical or electrical device. Background technique [0002] The amount of data and information in today's society is increasing rapidly, and the requirements for information storage are also increasing. The current mainstream storage technology in the market will be replaced by the next generation of high-performance new storage technology. Phase change memory technology has attracted more and more attention. Phase change memory technology originated from S.R.Ovshinsky's research on chalcogenide amorphous semiconductors. He reported the transition phenomenon between high and low resistance values ​​of chalcogenide materials under electric field excitation in the late 1960s and early 1970s. , put forward the idea that phase-change thin films can be applied to phase-change storage media (Phys. Rev. Lett., 21, 1450~1453,...

AI Technical Summary

Problems solved by technology

[0004] The preparation of the above-mentioned nanostructures not only requires multi-step complex processes, but also requires sophisticated and expensive nano-exposure equipment; in addition, the preparation cycle is long, and it takes a long time to prepare a high-density nanostructure unit. To prepare a complete high-density nanostructure Arrays of structures take longer and are less efficient

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