56 results about "Antimony telluride" patented technology

A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

The invention relates to an antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition film material capable of being used for a phase-transition memory and a preparation method thereof. The novel Sb-Te-Ti phase-transition storage material is formed by doping Ti on the basis of a Sb-Te phase-transition material, the doped Ti is bonded with both the Sb and the Te, a chemical formula of the novel phase-transition material is SbxTeyTi100-x-y, wherein x is more than zero and less than 80, and y is more than zero and less than 100 minus x. When the novel phase-transition storage material is a Ti-Sb2Te3 phase-transition storage material, Ti atoms substitute the positions of Sb atoms, and no phase is split. The present Sb-Te phase-transition material crystallization process is led by the grain growth, so that the phase transition rate is fast, but the maintaining force cannot meet the industrial requirements. The crystallization temperature of the novel Sb-Te-Ti phase-transition storage material is greatly improved, the maintaining force is enhanced, and the thermal stability is enhanced; at the same time, amorphous resistance is reduced, and the crystalline resistance is increased; and the novel Sb-Te-Ti phase-transition storage material can be widely applied to the phase-transition memory.

A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

High efficiency conversion of heat energy to electrical energy is achieved using a ring of metallic components and anodically sliced, reduced barriers, high purity n-type and p-type semiconductor wafers. Energy produced by heating one set of fins and cooling another set is extracted from a ring of bismuth telluride based n-type wafers and antimony telluride based p-type wafers using make-before-break control of MOSfet switch banks. Standard AC frequencies and DC output result from rectification of make-before-break high frequency switched very high currents in the ring and a DC to AC converter. Solar energy stored in porcelain fragments extends the time that solar energy can be used as the heat source for the thermoelectric generator device.

The invention discloses a cadmium telluride thin film solar battery. The cadmium telluride thin film solar battery comprises a substrate layer, a light absorbing layer, a back contact layer and a backelectrode layer which are arranged sequentially from bottom to top; the light absorbing layer is a cadmium telluride film layer; and the back contact layer is composed of an antimony telluride and copper selenide composite material. According to the cadmium telluride thin film solar battery of the invention, the back contact layer made of the antimony telluride and copper selenide composite material can form good ohmic contact with the cadmium telluride light absorbing layer, and therefore, potential barriers are lowered, and doped copper selenide can effectively eliminate the defects of thecadmium telluride light absorbing layer, and after selenium diffuses to a cadmium telluride interface, the forbidden band width of the cadmium telluride can be effectively increased, and presents deep-V type gradient change; and the initial performance and long-term stability of the battery are excellent, and the conversion efficiency of the battery is high.

The invention relates to a method for preparing a tilted nanowire array structural antimony telluride based membrane by evaporation coating. The method includes (1) fully mixing Sb2Te3, Te and Bi powder having purity of 99.99% in a mass percentage manner, with the mass ratio of the Sb2Te3, the Te and the Bi being 10:0.8-1.2:0.8-1.2, and pressing the mixture of the Sb2Te3, the Te and the Bi under 8-10 MPa to obtain a block; (2) subjecting a substrate to ultrasonic cleaning in acetone, absolute ethanol and deionized water respectively and blow-drying the substrate with nitrogen; (3) putting theblock obtained by pressing 0.1-0.2 g of the mixture of the Sb2Te3, the Te and the Bi into a tungsten boat in a vacuum chamber of a vacuum coating machine; (4) feeding nitrogen into the vacuum chamberfor 2-5 min to allow the vacuum degree to range from 2.0*10<-4> Pa to 5.0*10<-4> Pa; (5) setting a heating temperature to be 240-280 DEG C; (6) after the temperature rises, setting a deposition rate to be 10-20 nm / min and deposition time to be 2-3 h on a PID controller; and (7) starting an alternating current power supply, adjusting an output current to be 160-170 A, and preparing the tilted nanowire array structural (Sb,Bi)<2>Te3 membrane. Preparation is simple and effects are significant.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

The invention discloses a preparation method of flower-like micro-nano structures of metal tellurides. The preparation method belongs to the technical field of preparation of semiconductor materials.The method comprises the steps of dissolving sodium tellurite, polyvinylpyrrolidone, sodium acetate, ethanediamine and zinc acetylacetonate into ethylene glycol, removing oxygen in an obtained solution in an inert environment, and heating to obtain a precursor; then, respectively adding copper acetylacetonate, bismuth acetylacetonate, cadmium acetylacetonate, lead acetylacetonate and antimony acetylacetonate so as to successfully prepare the flower-like micro-nano structures of copper telluride, bismuth telluride, cadmium telluride, lead telluride and antimony telluride. The diameters of the prepared flower-like micro-nano structures of the copper telluride, the bismuth telluride, the cadmium telluride, the lead telluride and the antimony telluride are 8-10 microns. The method has the advantages of being simple in synthetic process, good in repeatability, safe and environmentally friendly, and cost-saving. Based on the characteristics of the preparation method, the preparation method has a very high value in the aspects of laboratory research and industrial applications.

The invention discloses a method for quickly preparing Sb2Te3 thermoelectric materials, which comprises the following steps: 1) weighing Sb powder and Te powder according to the stoichiometric ratio of each element in Sb2Te3, and then grinding and mixing them evenly to obtain a mixed raw material; 2) taking Step 1) The obtained mixed raw material is subjected to spark plasma activation and sintering to obtain a dense single-phase Sb2Te3 thermoelectric material. The invention has the advantages of fast response speed, high efficiency and energy saving, good repeatability and the like, and has good application prospects.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.