A method for rapidly preparing antimony telluride thermoelectric materials
A thermoelectric material, antimony telluride technology, applied in the direction of binary selenium/tellurium compounds, etc., can solve the problems of difficult to control composition, energy consumption, low chemical yield and other problems, achieve fast reaction speed, avoid volatilization, and good repeatability Effect
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Embodiment 1
[0030] A method for rapidly preparing antimony telluride thermoelectric materials, the preparation method comprising the following steps:
[0031] 1) According to Sb 2 Te 3 The stoichiometric ratio of each element in takes by weighing Sb powder and Te powder, and total mass is 4g, grinds and mixes then, obtains mixed raw material;
[0032] 2) The mixed raw material obtained in step 1) is subjected to discharge plasma activation sintering, the specific process is: the mixed raw material is packed into a graphite mold with an inner diameter of 16mm for compaction, and then under the condition that the vacuum degree is less than 10Pa and no sintering pressure is applied, Heating to 400°C at a heating rate of 60°C / min, holding for 10 minutes, then rapidly pressurizing to 30MPa, holding for 10 minutes and sintering to obtain dense single-phase antimony telluride (Sb 2 Te 3 ) thermoelectric materials.
[0033] The product obtained in this embodiment is analyzed by X-ray diffract...
Embodiment 2
[0035] A method for rapidly preparing antimony telluride thermoelectric materials, the preparation method comprising the following steps:
[0036] 1) According to Sb 2 Te 3 The stoichiometric ratio of each element in takes by weighing Sb powder and Te powder, and total mass is 4g, grinds and mixes then, obtains mixed raw material;
[0037] 2) The mixed raw material obtained in step 1) is subjected to discharge plasma activation sintering, the specific process is: the mixed raw material is packed into a graphite mold with an inner diameter of 16mm for compaction, and then under the condition that the vacuum degree is less than 10Pa and no sintering pressure is applied, Heating to 410°C at a heating rate of 70°C / min, holding for 10 minutes, then rapidly pressurizing to 30MPa, holding for 10 minutes and sintering to obtain dense single-phase antimony telluride (Sb 2 Te 3 ) thermoelectric materials.
[0038] figure 2 It is the XRD spectrum of the product obtained in this emb...
Embodiment 3
[0040] A method for rapidly preparing antimony telluride thermoelectric materials, the preparation method comprising the following steps:
[0041] 1) According to Sb 2 Te 3 The stoichiometric ratio of each element in takes by weighing Sb powder and Te powder, and total mass is 4g, grinds and mixes then, obtains mixed raw material;
[0042] 2) The mixed raw material obtained in step 1) is subjected to discharge plasma activation sintering, the specific process is: the mixed raw material is packed into a graphite mold with an inner diameter of 16mm for compaction, and then the vacuum degree is less than 10Pa and the sintering pressure is not applied. Heating at a heating rate of 60°C / min to 380°C, holding for 15 minutes, then quickly pressurizing to 40MPa, holding for 5 minutes and sintering to obtain dense single-phase antimony telluride (Sb 2 Te 3 ) thermoelectric materials.
[0043] image 3 It is the XRD spectrum of the product obtained in this embodiment, and the figur...
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