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Ca-doped antimony telluride ultra-stable phase change storage film material and preparation method thereof

A thin film material, antimony telluride technology, applied in metal material coating process, thermoelectric device node lead wire material, thermoelectric device manufacturing/processing, etc., can solve the problem of unstable memory amorphous resistance, low data retention temperature, Performance defects cannot be improved, etc., to achieve the effect of improving the resistance drift phenomenon

Active Publication Date: 2020-11-03
NINGBO UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Existing traditional Ge 2 Sb 2 Te 5 Although (GST) phase change materials have been widely used in advanced chip technologies such as 3D XPoint jointly developed by Intel and Micron in recent years, many of its performance defects still cannot be improved
For example, the amorphous state of GST has poor stability, including low crystallization temperature, low ten-year data retention temperature, and structural relaxation occurs in amorphous GST, that is, obvious The drift phenomenon of the amorphous resistance of the memory causes data storage safety problems due to the instability of the amorphous resistance of GST
That is to say, the low amorphous stability and large resistance drift of existing phase change materials hinder the further application of phase change memory

Method used

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  • Ca-doped antimony telluride ultra-stable phase change storage film material and preparation method thereof
  • Ca-doped antimony telluride ultra-stable phase change storage film material and preparation method thereof
  • Ca-doped antimony telluride ultra-stable phase change storage film material and preparation method thereof

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specific Embodiment

[0026] A Ca-doped antimony telluride ultra-stable phase-change thin film material, whose chemical structural formula is Ca x (Sb 2 Te 3 ) 100-x , where 0<x≤17.6 at%, the specific preparation process is as follows:

[0027] 1. In the magnetron sputtering coating system, silicon wafers and silicon oxide wafers are used as substrates, the Ca target is installed on the magnetron radio frequency sputtering target, and the Sb 2 Te 3 The target is installed on the magnetron DC sputtering target, and the sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree in the chamber reaches 5.0×10 -5Pa, and then feed high-purity argon gas with a volume flow rate of 50 sccm into the sputtering chamber until the air pressure in the sputtering chamber reaches the required pressure of 0.8 Pa for ignition. After the ignition, adjust the pressure of the chamber to the required pressure of 0.4 Pa for sputtering. Then control the sputtering power of the C...

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Abstract

The invention discloses a Ca-doped antimony telluride ultra-stable phase change storage film material and a preparation method thereof. The Ca-doped antimony telluride ultra-stable phase change storage film material and the preparation method are characterized in that the phase change storage film material is a mixture of three elements of calcium, antimony and tellurium, and the chemical structural formula of the phase change storage film material is Cax(Sb2Te3)100-x, wherein x is greater than 0 and less than 17.6 at%; and the Cax(Sb2Te3)100-x phase change storage film material is prepared bya magnetron sputtering coating system in a double-target co-sputtering mode. The phase change storage film material has the advantages that a Ca-Sb2Te3 phase change thin film has high crystallizationtemperature, large crystallization activation energy and good ten-year data retention capacity; and the phase change thin film has the high crystallization temperature, the large crystallization activation energy and the good ten-year data retention capacity, and the resistance drift coefficient is low, so that the resistance drift phenomenon of the phase change material in an amorphous state isimproved.

Description

technical field [0001] The invention relates to the technical field of phase-change storage materials, in particular to a Ca-doped antimony telluride ultra-stable phase-change storage film material and a preparation method thereof. Background technique [0002] Information storage plays an important role in human history. The development of today's electronic technology has greatly increased the amount of digital data. According to reports, the global data scale will reach 44 zettabytes (approximately 1 trillion GB) by 2020. The storage, transmission and processing of such a huge data group will consume a lot of resources, and will face severe challenges in the future. In addition, the erasing and writing times of the most popular non-volatile memory flash memory (Flash) and volatile dynamic random access memory (DRAM) differ by nearly 5 orders of magnitude (~105 ns and ~10 ns), which seriously restricts data storage and Transmission efficiency, so a memory revolution is u...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16C23C14/18C23C14/58H01L35/16H01L35/34
CPCC23C14/352C23C14/165C23C14/185C23C14/5806H10N10/852H10N10/01
Inventor 陈益敏毛缘恩王国祥侯亚飞沈祥
Owner NINGBO UNIV
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