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42 results about "Silver telluride" patented technology
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Silver telluride (Ag₂Te) is a chemical compound, a telluride of silver, also known as disilver telluride or silver(I) telluride. It forms a monoclinic crystal. In a wider sense, silver telluride can be used to denote AgTe (silver(II) telluride, a metastable compound) or Ag₅Te₃.
Preparation method of polyvinylpyrrolidone/silver/silver telluride ternary flexible composite thermoelectric film
InactiveCN110061121AImprove flexibilitySimple manufacturing processThermoelectric device manufacture/treatmentThermoelectric device junction materialsComposite filmNanowire
The present invention relates to a preparation method of a polyvinylpyrrolidone / silver / silver telluride ternary flexible composite thermoelectric film, which comprises the following steps: (1) PVP andtellurium source are taken and dissolved in ethylene glycol; protective gas is introduced, then a reducing agent is added; heating and stirring are performed in oil bath; and a solution A is obtainedafter centrifugal washing and dispersion; (2) silver source is taken and dissolved in ethylene glycol and stirred uniformly to obtain a solution B; (3) the solution B is added dropwise into the solution A and stirring the reaction is performed to obtain a solution C; (4) the solution C is centrifuged and washed to obtain PVP / Ag<2>Te nanowires which are dispersed in absolute ethyl alcohol and subjected to ultrasonic dispersion, then the PVP / Ag<2>Te nanowires are filtered by suction onto a substrate through a vacuum filtration method, and the composite film is obtained by vacuum drying; (5) thecomposite film is subjected to hot pressing treatment to obtain the PVP / Ag / Ag<2>Te flexible composite film supported by the substrate. Compared with the prior art, the invention has simple operationand strong operability, at the same time, the prepared sample has superior thermoelectric performance and flexibility, and can be used in flexible wearable devices.
Owner:TONGJI UNIV
Monodisperse near infrared silver telluride quantum dots and preparation method thereof
ActiveCN106190126AThe reaction conditions are mild and controllableEasy to operateNanoopticsLuminescent compositionsQuantum yieldSynthesis methods
The present invention discloses monodisperse near infrared silver telluride quantum dots and a preparation method thereof. The preparation method comprises: uniformly mixing a tellurium sodium hydride aqueous solution and an organic solution of a silver source, adding a surface ligand, carrying out a hydrothermal reaction, and carrying out surface functionalization to obtain the near infrared silver telluride quantum dots having the monodispersity in the polar solvent. According to the present invention, the near infrared silver telluride quantum dots are prepared by using the solvothermal-assisted phase interface synthesis method, wherein the reaction conditions are mild and controllable, the operation is simple, the repeatability is good, the used reagents are cheap and easy to obtain, the obtained near infrared silver telluride quantum dots have characteristics of uniform particle size, near-infrared luminescence property and high quantum yield, and by adjusting the particle size, the wavelength can be adjusted within 1300-1350 nm. In addition, the method of the present invention can be used for preparation of other telluride nanometer materials, easily amplify the reaction, and is suitable for large-scale industrial production.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Method for preparing Ag2X film
InactiveCN102080263ARaw materials are cheap and easy to getSimple processPolycrystalline material growthFrom normal temperature solutionsSolventReducing agent
The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.
Owner:TONGJI UNIV
Method for preparing flexible N type silver telluride nanowire thermoelectric thin film
ActiveCN106505142AImprove flexibilityControl thermoelectric propertiesThermoelectric device junction materialsGlass fiberNanowire
The invention discloses a method for preparing a flexible N type silver telluride nanowire thermoelectric thin film. The method includes the following steps: mixing a silver telluride nanowire with polyvinylpyrrolidone, and performing ultrasonic dispersion of the mixture in a solvent to obtain a silver telluride nanowire dispersion liquid; under the condition of vacuum filtration, uniformly dripping the silver telluride nanowire dispersion liquid on a glass fiber filter membrane, and performing vacuum drying at 75 DEG C to obtain a silver telluride nanowire thin film adhered to the glass fiber filter membrane; clamping the silver telluride nanowire thin film between two pieces of copy paper, placing the whole in a tablet press to perform extrusion forming, then using a brush to remove glass fiber filter membrane fragments on the reverse side of the silver telluride nanowire thin film, and placing the silver telluride nanowire thin film in a vacuum oven for annealing to obtain a target product. The method for preparing the flexible N type silver telluride nanowire thermoelectric thin film is simple and controllable, short in preparation cycle, safe and pollution-free, and low in energy consumption, an obtained thin film has excellent thermoelectric performance and good flexibility, flexible thermoelectric thin films of different sizes and shapes can be prepared flexibly according to the sizes and shapes of glass fiber membranes, and thus the method has wide application prospects.
Owner:GUILIN UNIV OF ELECTRONIC TECH
Method of Creating Micro-Scale Silver Telluride Grains Covered with Bismuth Nanoparticles
InactiveUS20120225513A1Improve performanceReduce transmissionSemiconductor/solid-state device manufacturingThermoelectric devicesDecompositionBismuth telluride
Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.
Owner:NASA
Preparation method of Ag2E nano wire
InactiveCN103774232ARaw materials are cheap and easy to getSimple processPolycrystalline material growthFrom normal temperature solutionsTe elementReducing agent
The invention provides a preparation method of Ag2E nano wire, wherein, E is sulfur, or selenium and or tellurium, and the method is characterized by comprising following steps: (1) preparing materials: adding silver nitrate into a beaker containing deionized water, adding alkali, a complexing agent and a template in sequence, stirring for fully dissolving, then adding a compound containing sulfur, or selenium, or tellurium, finally adding a reducing agent, and stirring until fully dissolving; wherein, silver nitrate and the compound containing sulfur, or selenium, or tellurium are added according to the atomic ratio 2:1, and the concentration of the silver nitrate is 0.01 mol / L-0.08 mol / L; (2) carrying out a constant temperature reaction; (3) washing; (4) drying. The invention has the advantages of cheap and easily available raw materials, simple technology and easy realization of large scale production. The synthesized silver sulfide, silver selenide and silver telluride nano wire can be widely applied to fast ion conductors, nonlinear optical devices, photoelectric secondary batteries, multifunctional ion selective electrodes, phase change storage devices, thermoelectric devices, magnetic field detectors, etc.
Owner:SHANGHAI NAT ENG RES CENT FORNANOTECH
Preparation method of nitrogen-doped carbon-coated zinc telluride nanometer wire and application thereof serving as sodium-ion battery negative electrode material
ActiveCN108365211AHigh specific capacityImprove cycle performanceMaterial nanotechnologySecondary cellsIon exchangeTe element
The invention discloses a preparation method of a nitrogen-doped carbon-coated zinc telluride nanometer wire and application thereof serving as a sodium-ion battery negative electrode material. Firstly, a tellurium nanometer wire is synthesized by using a hydrothermal method, the tellurium nanometer wire is stirred with a silver nitrate solution at room temperature to be converted as the silver telluride nanometer wire, then silver telluride nanometer wire reacts with a zinc nitrate solution to be converted as the zinc telluride nanometer wire by using an ion exchange reaction, the zinc telluride nanometer wire is coated with dopamine hydrochloride, and the nitrogen-doped carbon-coated zinc telluride nanometer wire is obtained through high temperature calcinations under the argon or nitrogen atmosphere. The preparation method of the composite material is simple, the raw materials are cheap and easy to obtain, the obtained material has the good cycling stability and specific capacity when serving as the sodium-ion battery negative electrode, and can be taken as the excellent sodium-ion battery negative electrode material.
Owner:HEFEI UNIV OF TECH
Method for controllably synthesizing near-infrared silver telluride quantum dots
ActiveCN112960655AReduce usageHigh preparation temperatureLuminescent compositionsMetal selenides/telluridesQuantum yieldQuantum dot
The invention discloses a silver precursor, a tellurium precursor and a preparation method for controllably synthesizing silver telluride quantum dots. The method comprises the following steps: mixing one or more silver mercaptide with organic phosphine to prepare an activity-adjustable silver precursor, and thermally injecting the tellurium precursor synthesized in air, thereby obtaining the silver telluride quantum dot. The method is easy to operate, good in repeatability and low in cost. The emission wavelength of the silver telluride quantum dot is adjustable in a range of 1150nm-2000nm by regulating and controlling the types and the proportion of thiol and phosphine, the proportion of a silver source to a tellurium precursor and the reaction time, the half-peak width of the emission wavelength is narrow, and the fluorescence quantum yield can reach more than 10%. The method can be used in the field of biomedical imaging, can also be used for preparing other nano materials containing silver or chalcogenide elements, and is suitable for large-scale industrial production.
Owner:NANKAI UNIV
Silver telluride nanowire flexible thermoelectric film welded at room temperature and preparation method thereof
ActiveCN110364616AUniform thicknessImprove conductivityThermoelectric device manufacture/treatmentThermoelectric device junction materialsNanowirePower factor
The invention relates to a silver telluride nanowire flexible thermoelectric film welded at a room temperature and a preparation method thereof. The preparation method comprises the following steps: (1) tellurium nanowires are dispersed in a first solvent to obtain a tellurium nanowire dispersion; (2) a tellurium nanowire film is prepared by the tellurium nanowire dispersion; (3) silver ion salt is dissolved in a second solvent, and a silver ion salt solution is prepared; and (4) the silver ion salt and the tellurium nanowire film react, the film is cleaned after the reaction, and after drying, the silver telluride nanowire flexible thermoelectric film welded at the room temperature is obtained. The prepared flexible thermoelectric film has high conductivity and power factor.
Owner:SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
Method for preparing silver telluride thermoelectric material by using ordinary pressure microwave synthesis method
InactiveCN102583274AUniform shapeNarrow particle size distributionBinary selenium/tellurium compoundsThermoelectric materialsMicrowave
The invention discloses a method for preparing a silver telluride thermoelectric material by using an ordinary pressure microwave synthesis method and relates to a thermoelectric material and a preparation method thereof. The invention aims to solve the problems that process is complicated and reaction time is long in the process of preparing an alloy thermoelectric material with the existing method. The preparation method disclosed by the invention comprises the following steps of: 1, respectively dissolving Na2TeO3 and AgNO3 into a glycol solvent; 2, adding NaOH into the glycol solution of Na2TeO3 and then placing into an ordinary pressure microwave synthesis instrument, and reacting at a certain temperature until the solution is blue; 3, temporarily stopping the microwave synthesis instrument, pouring the glycol solution of AgNO3 prepared in advance into the blue solution, and then further reacting for a plurality of minutes; and 4, washing the obtained product with deionized water, and drying to obtain the silver telluride thermoelectric material. The method disclosed by the invention is low in reaction temperature, short in reaction time, simple in process and energy-saving, and is operated at ordinary pressure. The prepared material is uniform in powder particle, good in crystallization degree and high in yield. The method disclosed by the invention can be applied to the field of alloy thermoelectric materials.
Owner:HARBIN INST OF TECH
Method used for preparing AgSbTe2 thermoelectric material
InactiveCN104961107AHigh densityGood repeatabilityBinary selenium/tellurium compoundsHigh energyVolumetric Mass Density
The invention relates to a method used for preparing a AgSbTe2 thermoelectric material. The method comprises following steps: 1) material preparation, wherein silver telluride and antimony telluride are taken as main raw materials, trace elemental tellurium is taken as a thermoelectric performance regulating composition, and silver telluride, antimony telluride, and elemental tellurium are weighed at a molar ratio of (0.9-1.1)(0.9-1.1):x as reaction raw materials, and x ranges from 0 to 0.04; 2) high energy ball milling, wherein the raw materials disclosed in step 1) are subjected to high energy ball milling in inert gas protection atmosphere so as to obtain single-phase AgSbTe2 powder; and 3) spark plasma sintering, wherein the single-phase AgSbTe2 powder is subjected to spark plasma sintering so as to obtain the compact AgSbTe2 thermoelectric material. The raw materials are stable in the air; oxidation is not easily caused; the whole technology is simple and controllable; preparation cost is low; repeatability is high; density of the prepared AgSbTe2 block material is high; phase is pure; and thermoelectric performance is excellent.
Owner:HENAN POLYTECHNIC UNIV
Preparation method of high-transmittance shielding film based on silver nanowires
ActiveCN110752066AReduce square resistanceImprove shielding effectConductive layers on insulating-supportsMagnetic/electric field screeningFilm baseGraphite
Owner:四川浩宇华东科技有限公司
Silver-telluride-and-silver-sulfide thin film with nanorod array and preparation method of silver-telluride-and-silver-sulfide thin film
ActiveCN112458420AGood orientationQuality improvementVacuum evaporation coatingSputtering coatingRadio frequency magnetron sputteringEngineering
The invention relates to flexible thermoelectric Ag2Te-Ag2S thin film with a nanorod array and a preparation method of the flexible thermoelectric Ag2Te-Ag2S thin film. The method comprises the stepsthat a nanorod array Te film is deposited on a substrate by adopting a radio frequency magnetron sputtering process, and then Ag film is deposited on the Te thin film by adopting a vacuum evaporationprocess, so that Te reacts with Ag to generate an Ag2Te-Ag compound film; and finally, S film is formed on the Ag2Te-Ag compound film by adopting a spin-coating process, and annealing treatment is carried out to obtain the Ag2Te-Ag2S thin film with the nanorod array with good orientation, good quality and excellent thermoelectric performance, the conductivity of the Ag2Te-Ag2S thin film is 1 * 10[3]S * m-1 to 150 * 10[3]S * m-1, and the Seebeck coefficient is 100 mu V.K-1 to 1, 800 mu V.K-1.
Owner:BEIJING INFORMATION SCI & TECH UNIV
Novel-phase two-dimensional galena silver telluride synthesized on basis of two-dimensional tellurium template method and preparation method and application of novel-phase two-dimensional galena silver telluride
ActiveCN113443609AQuality improvementHigh crystallinityMetal selenides/telluridesBinary selenium/tellurium compoundsPyrrolidinonesPiezoelectric generator
The invention discloses novel-phase two-dimensional galena silver telluride synthesized based on a two-dimensional tellurium template method and a preparation method and application of the novel-phase two-dimensional galena silver telluride. A stoichiometric ratio of silver to tellurium is 4.53: 3. The preparation method comprises the following steps: dissolving sodium tellurite and polyvinylpyrrolidone in deionized water, stirring an obtained solution through a magnetic stirrer to fully disperse and dissolve the solution, adding hydrazine hydrate and an alkaline solution, putting the obtained mixture into a hydrothermal reaction kettle, sealing the hydrothermal reaction kettle, putting the hydrothermal reaction kettle into a drying oven for a reaction, centrifugally washing the obtained solution to obtain a solution containing silver gray two-dimensional tellurium nanocrystals, dissolving silver nitrate in deionized water to obtain a silver nitrate solution, dropwise adding the silver nitrate solution into the solution containing the silver gray two-dimensional tellurium nanocrystals, conducting a stirring reaction at a room temperature, and when the silver gray solution becomes yellow green, continuing to dropwise add the silver nitrate solution till the silver gray solution becomes grey green. The novel-phase two-dimensional galena silver telluride provided by the invention has the advantages of high stability and simple preparation, has an asymmetric center structure, and is applied as a nano-piezoelectric generator.
Owner:ZHEJIANG LAB
A kind of preparation method of ag2e nanowire
InactiveCN103774232BRaw materials are cheap and easy to getSimple processPolycrystalline material growthFrom normal temperature solutionsNanowireTe element
The invention provides a preparation method of Ag2E nano wire, wherein, E is sulfur, or selenium and or tellurium, and the method is characterized by comprising following steps: (1) preparing materials: adding silver nitrate into a beaker containing deionized water, adding alkali, a complexing agent and a template in sequence, stirring for fully dissolving, then adding a compound containing sulfur, or selenium, or tellurium, finally adding a reducing agent, and stirring until fully dissolving; wherein, silver nitrate and the compound containing sulfur, or selenium, or tellurium are added according to the atomic ratio 2:1, and the concentration of the silver nitrate is 0.01 mol / L-0.08 mol / L; (2) carrying out a constant temperature reaction; (3) washing; (4) drying. The invention has the advantages of cheap and easily available raw materials, simple technology and easy realization of large scale production. The synthesized silver sulfide, silver selenide and silver telluride nano wire can be widely applied to fast ion conductors, nonlinear optical devices, photoelectric secondary batteries, multifunctional ion selective electrodes, phase change storage devices, thermoelectric devices, magnetic field detectors, etc.
Owner:SHANGHAI NAT ENG RES CENT FORNANOTECH
Method of creating micro-scale silver telluride grains covered with bismuth nanoparticles
InactiveUS8691612B2Improve performanceReduce transmissionSemiconductor/solid-state device manufacturingThermoelectric devicesBismuth tellurideDecomposition
Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.
Owner:NASA
Preparation method and application of near-infrared IIb region metal ion (M/Zn, Mn) doped silver telluride quantum dots
ActiveCN114316988ASimple processLow costMaterial nanotechnologyNanoopticsQuantum yieldPenetration depth
The invention discloses a near-infrared IIb region metal ion (M = Zn, Mn) doped silver telluride quantum dot and a preparation method and application thereof. The synthesized quantum dot is excellent in fluorescence performance and can be used for fluorescence imaging in a near-infrared IIb region (1500-1700 nm), and the penetration depth and the spatial resolution of imaging are improved. The synthesis method mainly comprises the following steps: mixing and stirring a silver source, a zinc source or a manganese source and a sulfydryl ligand, introducing inert gas, and heating and dissolving to obtain a mixed solution of a silver precursor and a zinc or manganese precursor; and rapidly injecting a tellurium precursor at the temperature of 160-170 DEG C, and reacting for a period of time to obtain the zinc or manganese doped silver telluride quantum dot. The method is simple to operate, good in repeatability and relatively low in cost; the prepared zinc or manganese doped silver telluride quantum dot is uniform in particle size distribution, good in monodispersity and high in fluorescence quantum yield, and keeps good stability under the conditions of continuous laser irradiation, long-time storage, further ligand modification and the like. The method can be widely applied to the fields of fluorescence living body imaging, biomedical detection, photoelectric devices and the like.
Owner:WUHAN UNIV
Method for preparing Ag2X film
InactiveCN102080263BRaw materials are cheap and easy to getSimple processPolycrystalline material growthFrom normal temperature solutionsSolventReducing agent
The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.
Owner:TONGJI UNIV
Method for preparing silver antimony tellurium and silver telluride based on-site composite thermoelectric material
InactiveCN101532097BLow thermal conductivityImprove thermoelectric performanceThermoelectric device manufacture/treatmentThermoelectric materialsChemical composition
Owner:ZHEJIANG UNIV
Method for preparing silver antimony telluride thermoelectric material by low-temperature solid-state reaction combined with hot-pressing process
InactiveCN104762501BHigh densityHigh purityThermoelectric device junction materialsHigh densityReaction temperature
The invention relates to a method for preparing silver antimony telluride thermoelectric materials by low-temperature solid-state reaction combined with hot pressing process, which includes the following steps: 1) Ingredients: Weigh elemental silver, tellurium and Antimony is used as raw material, where Silver telluride antimony ingot or nearly single-phase silver antimony telluride ingot; 4) hot pressing: grind the ingot obtained in step 3) and then perform hot pressing and sintering to obtain a high-density silver antimony telluride thermoelectric material. This method has low reaction temperature, simple and controllable process, low preparation cost, and the prepared silver antimony telluride bulk material has high density, high purity, good repeatability and excellent thermoelectric properties.
Owner:HENAN POLYTECHNIC UNIV
A preparation method of flexible n-type silver telluride nanowire thermoelectric film
ActiveCN106505142BImprove flexibilityControl thermoelectric propertiesThermoelectric device junction materialsGlass fiberNanowire
The invention discloses a method for preparing a flexible N-type silver telluride nanowire thermoelectric film. The method comprises the following steps: mixing the silver telluride nanowire with polyvinylpyrrolidone, and ultrasonically dispersing in a solvent to obtain the dispersion of the silver telluride nanowire liquid; under the condition of vacuum filtration, evenly drop-coat the silver telluride nanowire dispersion on the glass fiber filter membrane, and dry it in vacuum at 75°C to obtain the silver telluride nanowire thin film adhered to the glass fiber filter membrane sandwich it between two pieces of copy paper, place it in a tablet press, and then use a brush to remove the glass fiber filter membrane fragments on the back of the silver telluride nanowire film, and place it in a vacuum oven for annealing to obtain the target product. The invention is simple and controllable, has short preparation cycle, safety and pollution-free, low energy consumption, and the obtained thin film has excellent thermoelectric performance and good flexibility, and flexible thermoelectric thin films of different sizes and shapes can be flexibly prepared according to the size and shape of the glass fiber membrane. have a broad vision of application.
Owner:GUILIN UNIV OF ELECTRONIC TECH
A new phase two-dimensional galena silver telluride synthesized based on two-dimensional tellurium template method and its preparation method and application
ActiveCN113443609BQuality improvementHigh crystallinityMetal selenides/telluridesBinary selenium/tellurium compoundsPyrrolidinonesPiezoelectric generator
The invention discloses a new phase two-dimensional galena silver telluride synthesized based on a two-dimensional tellurium template method and its preparation method and application. The stoichiometric ratio of silver and tellurium is 4.53:3, comprising the following steps: Dissolve sodium bicarbonate and polyvinylpyrrolidone in deionized water, stir the solution with a magnetic stirrer to fully disperse and dissolve, then add hydrazine hydrate and alkaline solution, and put it in a hydrothermal reaction kettle, seal it and put it in an oven for reaction, and you will get The solution was centrifuged and washed to obtain a solution containing silver-gray two-dimensional tellurium nanocrystals, and silver nitrate was dissolved in deionized water to obtain a silver nitrate solution, and the silver nitrate solution was added dropwise to the solution containing silver-gray two-dimensional tellurium nanocrystals. Stir the reaction down, until the silver-gray solution turns yellow-green, continue to add the silver nitrate solution dropwise until it turns gray-green to the end. The invention has high stability and simple method, has an asymmetric central structure, and is used as a nanometer piezoelectric generator.
Owner:ZHEJIANG LAB
Method for producing selenide and telluride nano-material with composite base metal hydroxide solvent
InactiveCN101219779BLow costSimplify operating proceduresBinary selenium/tellurium compoundsChemical reactionZinc selenide
The invention discloses a method for preparing nanometer crystal material of selenide and telluride, suitable for preparing nanometer crystal materials such as zinc selenide, lead selenide, cadmium selenide, cuprous selenide, zinc and cadmium selenide, silver telluride and lead telluride. The method is characterized by replacing water or organic solvent in the prior hydrothermal / solvent thermal synthetic method with fused compound hydroxide of alkali metals, and carrying out chemical reaction under normal pressure of temperature of 100 to 300 DEG C. All materials are soluble inorganic metal salts, selenide powders and telluride powders. The synthetic process has low cost; various parameters (such as temperature, pressure, concentration, etc.) in the reaction process are easy to monitor and control; the reaction system is good in uniformity, simple in technology and easy in production expansion. The obtained crystal products have good crystallinity, clean surface and uniform size, thussuitable for intrinsic property research and function exertion of the nanometer crystal material to the maximum limit.
Owner:CHONGQING UNIV
Distributed feedback laser containing silver telluride quantum dots and preparation method thereof
InactiveCN109286132AAchieve near-infrared light gainImprove light and heat stabilityLaser optical resonator constructionDistributed feedback laserQuantum dot
The invention discloses a distributed feedback laser containing silver telluride quantum dots and a preparation method thereof. The distributed feedback laser comprises a quartz substrate and silicondioxide periodic gratings containing silver telluride quantum dots, wherein the quartz substrates and the silicon dioxide periodic gratings are sequentially arranged upwards. According to the distributed feedback laser, the low-toxicity silver telluride quantum dots with the lowest quantum state being 2-fold degeneracy are used to replace lead salt quantum dots with the lowest quantum state being8-fold degeneracy so as to achieve near-infrared optical gain with a low threshold. The photothermal stability of silicon dioxide is far higher than that of an organic polymer. The periodic gratings are prepared by using a silicon dioxide film containing the silver telluride quantum dots, and finally an environment-friendly distributed feedback near-infrared quantum dot laser with a low thresholdand high stability can be obtained.
Owner:NANJING UNIV OF POSTS & TELECOMM
Water phase preparation method of near infrared silver telluride nano-crystals
ActiveCN106517108AGood dispersionGood light stabilityLuminescent compositionsBinary selenium/tellurium compoundsDispersityWater soluble
The invention discloses a water phase preparation method of near infrared silver telluride nano-crystals. According to the method, a silver source, a tellurium source and surface ligand molecules are adopted to achieve one-step preparation of water-soluble silver telluride nano-crystals with near infrared fluorescence in a water phase system. The near infrared silver telluride nano-crystals prepared by the method disclosed by the invention has relatively good dispersity in water, the emission wavelength is between 1100 and 1400 nm, and the near infrared fluorescence and chemical stability are relatively good, so that the near infrared silver telluride nano-crystals can be applied to the fields of biological fluorescence labeling, imaging, medicine separation and certain photoelectric devices.
Owner:苏州影睿光学科技有限公司
Method for preparing silver telluride thermoelectric material by using ordinary pressure microwave synthesis method
InactiveCN102583274BUniform shapeNarrow particle size distributionBinary selenium/tellurium compoundsThermoelectric materialsMicrowave
Owner:HARBIN INST OF TECH
Preparation method of silver telluride/PEDOT:PSS/cotton cloth composite thermoelectric material
PendingCN110212082ASimple preparation processSimple and fast operationThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsGas phase
The invention relates to a preparation method of a silver telluride / fabric composite thermoelectric material. The silver telluride / fabric composite thermoelectric material is prepared by a gas phase induced reduction method for the first time. The preparation method comprises the steps of firstly, adding a proper amount of AgNO3, TeO2, mercaptopropionic acid, a surfactant and the like into a proper amount of deionized water, and uniformly stirring the chemicals until the chemicals are completely dissolved, thereby preparing an Ag2Te precursor solution; and soaking a fabric in the Ag2Te precursor solution for a period of time, then suspending the fabric in a beaker, adding a solution containing a reducing agent into the bottom of the beaker, placing the beaker on a heating table and heatingthe beaker to a certain temperature for gas phase reduction to generate the silver telluride / fabric composite thermoelectric material. The method has the advantages of simple process, convenient operation, large-scale production and the like. The prepared silver telluride / fabric composite thermoelectric material is excellent in thermoelectric performance and has a wide application prospect and ahigh market value in the fields of thermoelectric power generation and refrigeration devices.
Owner:SHANGHAI INST OF TECH
Method for preparing silver antimony telluride thermoelectric material by taking binary tellurides as start raw materials
InactiveCN104946917AHigh densityImprove thermoelectric performanceThermoelectric device manufacture/treatmentThermoelectric device junction materialsHigh densityReaction temperature
The invention relates to a method for preparing a silver antimony telluride thermoelectric material by taking binary tellurides as start raw materials. The method comprises the following specific steps: 1) weighing silver telluride and antimony telluride at a certain molar ratio as start raw materials; 2) uniformly mixing the start raw materials in the step 1), pressing into a block and performing vacuum sealing; 3) heating the block obtained after the vacuum sealing in the step 2) to a reaction temperature of 420-500 DEG C, and reacting for 3-12h to obtain a single-phase or near single-phase silver antimony telluride ingot; and 4) grinding the ingot obtained in the step 3), and performing spark plasma sintering to obtain a dense silver antimony telluride thermoelectric material. The raw materials adopted in the method are stable in air and hardly oxidized, and large-scale and low-cost production is easy to realize; a protective atmosphere is not needed the storage and mixing processes of the raw materials, the reaction temperature is low, the process is simple and controllable, the preparation cost is low, and the repeatability is good; and the prepared silver antimony telluride block material has high density and excellent thermoelectric performance.
Owner:HENAN POLYTECHNIC UNIV
Preparation method of high-transparency shielding film based on silver nanowires
ActiveCN110752066BReduce square resistanceImprove shielding effectConductive layers on insulating-supportsMagnetic/electric field screeningFilm baseGraphite
The invention discloses a preparation method of a high-transmittance shielding film based on silver nanowires. The preparation method comprises the steps of preparing silver sulfide-silver composite structure nanowires; preparing an assembly film with multiple layers of silver nanowires by adopting a Langmuir-Blodgett technology; preparing a modified graphene dispersion liquid, soaking the assembly film with the multiple layers of silver nanowires in the modified graphene dispersion liquid, adding a condensing agent, carrying out ultrasonic treatment, washing, and drying to obtain the high-transmittance shielding film. According to the invention, the assembly film is prepared by adopting the multi-layer combination of the silver nanowires, the silver telluride nanowires and the silver sulfide-silver composite structure nanowires, and condensation modification is conducted through the modified graphene. The prepared high-transmittance shielding film is low in sheet resistance, good in shielding effect and more excellent in light transmittance.
Owner:四川浩宇华东科技有限公司
Silver telluride/silver telluride zinc core-shell quantum dot-contained vertical cavity surface emitting laser and fabrication method thereof
InactiveCN109346924AInhibitory complexAchieve near-infrared light gainLaser detailsLaser active region structureVertical-cavity surface-emitting laserLead salt
The invention discloses a silver telluride / silver telluride zinc core-shell quantum dot-contained vertical cavity surface emitting laser and a fabrication method thereof. The vertical cavity surface emitting laser comprises a quartz substrate, a lower high-reflection mirror, a silver telluride / silver telluride zinc core-shell quantum dot-contained silicon dioxide layer and an upper high-reflectionmirror which are sequentially and upwards arranged. Low-threshold near-infrared light gain is achieved by employing low-toxicity lowest quantum-state double degenerated silver telluride dot to substitute lowest quantum-state eightfold degenerated lead salt quantum dot, a smooth interface barrier is built and a surface of the silver telluride quantum dot is passivated by coating the surface of thesilver telluride quantum dot with a silver telluride zinc alloy shell of which the content of a zinc element is gradually increased from inside to outside, and the light gain threshold can be furtherreduced; and a silver telluride / silver telluride zinc core-shell quantum dot-contained silicon dioxide thin film is sandwiched between the two high-reflection mirrors, so that the environmental-friendly vertical cavity surface emitting near-infrared quantum-dot laser with a low threshold and a high quality factor can be finally obtained.
Owner:NANJING UNIV OF POSTS & TELECOMM
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