42 results about "Silver telluride" patented technology

The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.

Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

The invention discloses a silver precursor, a tellurium precursor and a preparation method for controllably synthesizing silver telluride quantum dots. The method comprises the following steps: mixing one or more silver mercaptide with organic phosphine to prepare an activity-adjustable silver precursor, and thermally injecting the tellurium precursor synthesized in air, thereby obtaining the silver telluride quantum dot. The method is easy to operate, good in repeatability and low in cost. The emission wavelength of the silver telluride quantum dot is adjustable in a range of 1150nm-2000nm by regulating and controlling the types and the proportion of thiol and phosphine, the proportion of a silver source to a tellurium precursor and the reaction time, the half-peak width of the emission wavelength is narrow, and the fluorescence quantum yield can reach more than 10%. The method can be used in the field of biomedical imaging, can also be used for preparing other nano materials containing silver or chalcogenide elements, and is suitable for large-scale industrial production.

The invention provides a preparation method of Ag2E nano wire, wherein, E is sulfur, or selenium and or tellurium, and the method is characterized by comprising following steps: (1) preparing materials: adding silver nitrate into a beaker containing deionized water, adding alkali, a complexing agent and a template in sequence, stirring for fully dissolving, then adding a compound containing sulfur, or selenium, or tellurium, finally adding a reducing agent, and stirring until fully dissolving; wherein, silver nitrate and the compound containing sulfur, or selenium, or tellurium are added according to the atomic ratio 2:1, and the concentration of the silver nitrate is 0.01 mol / L-0.08 mol / L; (2) carrying out a constant temperature reaction; (3) washing; (4) drying. The invention has the advantages of cheap and easily available raw materials, simple technology and easy realization of large scale production. The synthesized silver sulfide, silver selenide and silver telluride nano wire can be widely applied to fast ion conductors, nonlinear optical devices, photoelectric secondary batteries, multifunctional ion selective electrodes, phase change storage devices, thermoelectric devices, magnetic field detectors, etc.

Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.

The invention discloses a method for preparing silver antimony tellurium and silver telluride based on-site composite thermoelectric material, including the steps: weighing silver, antimony and tellurium according to the formula: Agx Sb2-xTe3-x, wherein x being 086 to 0.95, enveloping the same in a vacuum quartz tube, heating to 1000 to 1100 DEG C for fully fusing, keeping for 600 to 1000 minutes, cooling at the speed of 1 DEG C per minute to 900 DEG C, placing the quartz tube into the liquid nitrogen for quenching, obtaining the castingsolid material, ball milling and crushing, obtaining theblock thermoelectric alloy. The invention has simple process, lower cost, short period and adaptability for mass productuion, the prepared block silver antimony tellurium and silver telluride based on-site composite thermoelectric material has lower thermal conductivity and higher Seebeck coefficient, thus obtaining higher room-temperature thermoelectricalmerit.

The invention relates to a method for preparation of a silver antimony telluride thermoelectric material by combining low temperature solid phase reaction with hot pressing process. The method comprises the steps of: 1) ingredient compounding: according to the stoichiometric ratio of each element in the chemical formula AgSbTe2+x, weighing elemental silver, elemental tellurium and elemental antimony as raw materials, wherein x is 0-0.02; 2) briquetting sealing; 3) solid phase reaction: raising the temperature of the vacuum-tight block obtained in step 2) to a reaction temperature of 390-450DEG C, and conducting heat preservation for 6-12h to obtain a single phase silver antimony telluride ingot body or approximate single phase silver antimony telluride ingot body; 4) hot-pressing: grinding the obtained ingot and then performing hot pressed sintering, thus obtaining the high density silver antimony telluride thermoelectric material. The method has the characteristics of low reaction temperature, simple and controllable process, low preparation cost, and the prepared silver antimony telluride block material has the advantages of high density, high purity, good repeatability and excellent thermoelectric properties.

The invention discloses a method for preparing a flexible N-type silver telluride nanowire thermoelectric film. The method comprises the following steps: mixing the silver telluride nanowire with polyvinylpyrrolidone, and ultrasonically dispersing in a solvent to obtain the dispersion of the silver telluride nanowire liquid; under the condition of vacuum filtration, evenly drop-coat the silver telluride nanowire dispersion on the glass fiber filter membrane, and dry it in vacuum at 75°C to obtain the silver telluride nanowire thin film adhered to the glass fiber filter membrane sandwich it between two pieces of copy paper, place it in a tablet press, and then use a brush to remove the glass fiber filter membrane fragments on the back of the silver telluride nanowire film, and place it in a vacuum oven for annealing to obtain the target product. The invention is simple and controllable, has short preparation cycle, safety and pollution-free, low energy consumption, and the obtained thin film has excellent thermoelectric performance and good flexibility, and flexible thermoelectric thin films of different sizes and shapes can be flexibly prepared according to the size and shape of the glass fiber membrane. have a broad vision of application.

The invention discloses a new phase two-dimensional galena silver telluride synthesized based on a two-dimensional tellurium template method and its preparation method and application. The stoichiometric ratio of silver and tellurium is 4.53:3, comprising the following steps: Dissolve sodium bicarbonate and polyvinylpyrrolidone in deionized water, stir the solution with a magnetic stirrer to fully disperse and dissolve, then add hydrazine hydrate and alkaline solution, and put it in a hydrothermal reaction kettle, seal it and put it in an oven for reaction, and you will get The solution was centrifuged and washed to obtain a solution containing silver-gray two-dimensional tellurium nanocrystals, and silver nitrate was dissolved in deionized water to obtain a silver nitrate solution, and the silver nitrate solution was added dropwise to the solution containing silver-gray two-dimensional tellurium nanocrystals. Stir the reaction down, until the silver-gray solution turns yellow-green, continue to add the silver nitrate solution dropwise until it turns gray-green to the end. The invention has high stability and simple method, has an asymmetric central structure, and is used as a nanometer piezoelectric generator.

The invention discloses a method for preparing nanometer crystal material of selenide and telluride, suitable for preparing nanometer crystal materials such as zinc selenide, lead selenide, cadmium selenide, cuprous selenide, zinc and cadmium selenide, silver telluride and lead telluride. The method is characterized by replacing water or organic solvent in the prior hydrothermal / solvent thermal synthetic method with fused compound hydroxide of alkali metals, and carrying out chemical reaction under normal pressure of temperature of 100 to 300 DEG C. All materials are soluble inorganic metal salts, selenide powders and telluride powders. The synthetic process has low cost; various parameters (such as temperature, pressure, concentration, etc.) in the reaction process are easy to monitor and control; the reaction system is good in uniformity, simple in technology and easy in production expansion. The obtained crystal products have good crystallinity, clean surface and uniform size, thussuitable for intrinsic property research and function exertion of the nanometer crystal material to the maximum limit.

The invention discloses a method for preparing a silver telluride thermoelectric material by using an ordinary pressure microwave synthesis method and relates to a thermoelectric material and a preparation method thereof. The invention aims to solve the problems that process is complicated and reaction time is long in the process of preparing an alloy thermoelectric material with the existing method. The preparation method disclosed by the invention comprises the following steps of: 1, respectively dissolving Na2TeO3 and AgNO3 into a glycol solvent; 2, adding NaOH into the glycol solution of Na2TeO3 and then placing into an ordinary pressure microwave synthesis instrument, and reacting at a certain temperature until the solution is blue; 3, temporarily stopping the microwave synthesis instrument, pouring the glycol solution of AgNO3 prepared in advance into the blue solution, and then further reacting for a plurality of minutes; and 4, washing the obtained product with deionized water, and drying to obtain the silver telluride thermoelectric material. The method disclosed by the invention is low in reaction temperature, short in reaction time, simple in process and energy-saving, and is operated at ordinary pressure. The prepared material is uniform in powder particle, good in crystallization degree and high in yield. The method disclosed by the invention can be applied to the field of alloy thermoelectric materials.

The invention relates to a method for preparing a silver antimony telluride thermoelectric material by taking binary tellurides as start raw materials. The method comprises the following specific steps: 1) weighing silver telluride and antimony telluride at a certain molar ratio as start raw materials; 2) uniformly mixing the start raw materials in the step 1), pressing into a block and performing vacuum sealing; 3) heating the block obtained after the vacuum sealing in the step 2) to a reaction temperature of 420-500 DEG C, and reacting for 3-12h to obtain a single-phase or near single-phase silver antimony telluride ingot; and 4) grinding the ingot obtained in the step 3), and performing spark plasma sintering to obtain a dense silver antimony telluride thermoelectric material. The raw materials adopted in the method are stable in air and hardly oxidized, and large-scale and low-cost production is easy to realize; a protective atmosphere is not needed the storage and mixing processes of the raw materials, the reaction temperature is low, the process is simple and controllable, the preparation cost is low, and the repeatability is good; and the prepared silver antimony telluride block material has high density and excellent thermoelectric performance.

The invention discloses a preparation method of a high-transmittance shielding film based on silver nanowires. The preparation method comprises the steps of preparing silver sulfide-silver composite structure nanowires; preparing an assembly film with multiple layers of silver nanowires by adopting a Langmuir-Blodgett technology; preparing a modified graphene dispersion liquid, soaking the assembly film with the multiple layers of silver nanowires in the modified graphene dispersion liquid, adding a condensing agent, carrying out ultrasonic treatment, washing, and drying to obtain the high-transmittance shielding film. According to the invention, the assembly film is prepared by adopting the multi-layer combination of the silver nanowires, the silver telluride nanowires and the silver sulfide-silver composite structure nanowires, and condensation modification is conducted through the modified graphene. The prepared high-transmittance shielding film is low in sheet resistance, good in shielding effect and more excellent in light transmittance.