Silver-telluride-and-silver-sulfide thin film with nanorod array and preparation method of silver-telluride-and-silver-sulfide thin film

A nanorod array and film technology, applied in the field of Ag2Te-Ag2S flexible thermoelectric film and its preparation, can solve problems such as difficulty in regulating electroacoustic transport

Active Publication Date: 2021-03-09
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Ag prepared by chemical and spin-coating methods in the current research 2 Te(Se,S) thin film has a random microstructure, and the electroacoustic transport is difficult to control
The high-density integration, miniaturization, and film-based interface control of devices prepared by cutting bulk materials are facing great challenges.

Method used

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  • Silver-telluride-and-silver-sulfide thin film with nanorod array and preparation method of silver-telluride-and-silver-sulfide thin film
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  • Silver-telluride-and-silver-sulfide thin film with nanorod array and preparation method of silver-telluride-and-silver-sulfide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment provides a Ag with nanorod array 2 Te-Ag 2 The preparation method of S flexible thermoelectric thin film is as follows:

[0040] (1) Use polyimide as the substrate, first pretreat the substrate, specifically: soak the substrate in detergent water in turn (detergent and water are prepared according to the mass volume ratio of 1g:50mL) , deionized water, ethanol, and acetone for ultrasonic cleaning, and after drying with high-purity nitrogen at 20°C, the substrate was subjected to Ar / H 2 Plasma cleaning under the atmosphere to obtain the pretreated substrate;

[0041] A nanorod array Te film is deposited on the pretreated substrate by radio frequency magnetron sputtering process; in the nanorod array Te film structure, the length of the nanorod is 5000nm, and the diameter of the nanorod is distributed between 50-150nm within range.

[0042] The specific operation of depositing the Te film by the radio frequency magnetron sputtering process is as follow...

Embodiment 2

[0050] This embodiment provides a Ag with nanorod array 2 Te-Ag 2 The preparation method of S flexible thermoelectric thin film is as follows:

[0051] (1) Using polyamide-imide as the substrate, first pretreat the substrate, specifically: soak the substrate in detergent water in sequence (detergent and water are prepared according to the mass volume ratio of 1g:50mL ), deionized water, ethanol, and acetone for ultrasonic cleaning, and after drying with high-purity nitrogen at 100°C, the substrate was subjected to Ar / H 2 Plasma cleaning under the atmosphere to obtain the pretreated substrate;

[0052] Using a radio frequency magnetron sputtering process, a nanorod array Te film is deposited on the pretreated substrate; in the nanorod array Te film structure, the length of the nanorod is 5000nm, and the diameter of the nanorod is 50nm;

[0053] The specific operation of depositing the Te film by the radio frequency magnetron sputtering process is as follows: (a) put the Te t...

Embodiment 3

[0061] This embodiment provides a Ag with nanorod array 2 Te-Ag 2 The preparation method of S flexible thermoelectric thin film is as follows:

[0062] (1) Using polyvinylidene fluoride as the substrate, pretreat the substrate first, specifically: soak the substrate in detergent water in sequence (detergent and water are prepared according to the mass volume ratio of 1g:50mL ), deionized water, ethanol, and acetone for ultrasonic cleaning, and after drying with high-purity nitrogen at 60°C, the substrate was subjected to Ar / H 2 Plasma cleaning under the atmosphere to obtain the pretreated substrate;

[0063] Using a radio frequency magnetron sputtering process, a nanorod array Te film is deposited on the pretreated substrate; in the nanorod array Te film structure, the length of the nanorod is 2500nm, and the diameter of the nanorod is 500nm;

[0064] The specific operation of depositing the Te film by the radio frequency magnetron sputtering process is as follows: (a) put ...

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Abstract

The invention relates to flexible thermoelectric Ag2Te-Ag2S thin film with a nanorod array and a preparation method of the flexible thermoelectric Ag2Te-Ag2S thin film. The method comprises the stepsthat a nanorod array Te film is deposited on a substrate by adopting a radio frequency magnetron sputtering process, and then Ag film is deposited on the Te thin film by adopting a vacuum evaporationprocess, so that Te reacts with Ag to generate an Ag2Te-Ag compound film; and finally, S film is formed on the Ag2Te-Ag compound film by adopting a spin-coating process, and annealing treatment is carried out to obtain the Ag2Te-Ag2S thin film with the nanorod array with good orientation, good quality and excellent thermoelectric performance, the conductivity of the Ag2Te-Ag2S thin film is 1 * 10[3]S * m-1 to 150 * 10[3]S * m-1, and the Seebeck coefficient is 100 mu V.K-1 to 1, 800 mu V.K-1.

Description

technical field [0001] The invention belongs to the technical field of flexible thermoelectric thin films, in particular to an Ag film with a nanorod array. 2 Te-Ag 2 S flexible thermoelectric thin film and its preparation method. Background technique [0002] Flexible electronic thin film devices can achieve repeated stretching, bending, folding, twisting, etc., and with their unique flexibility / extensibility and high-efficiency, low-cost manufacturing process, they have broad application prospects in information, energy, medical, national defense and other fields. A thermoelectric device is a functional device that realizes mutual conversion of thermal energy and electrical energy through the internal carrier transport of a thermoelectric material. It has the functions of thermoelectric power generation and signal sensing. Proven method. The development of light-weight, highly integrated and highly reliable energy conversion technology based on thermoelectric devices, a...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/26C23C14/14C23C14/58
CPCC23C14/35C23C14/26C23C14/14C23C14/5866
Inventor 曹丽莉高洪利
Owner BEIJING INFORMATION SCI & TECH UNIV
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