Preparation method of high-transparency shielding film based on silver nanowires

A technology of silver nanowires and nanowires, which is used in the manufacture of conductive/semiconductive layer equipment, magnetic field/electric field shielding, cable/conductor manufacturing, etc. It can solve the problem of insufficient light transmission and shielding properties of high-transparency shielding films Excellent light transmittance, low square resistance and good shielding effect

Active Publication Date: 2020-10-02
四川浩宇华东科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, a single silver nanowire is generally used to prepare a high-transparency shielding film using silver nanowires, and the performance of the prepared high-transmission shielding film is not excellent enough in light transmission and shielding properties.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A method for preparing a high-transparency shielding film based on silver nanowires, comprising the following steps:

[0022] Step 1. Place the silver nanowires in a low-temperature plasma processor for 15 minutes, add the treated silver nanowires into the ammonium sulfide solution for irradiation and stirring reaction, separate solid and liquid, and wash to obtain silver sulfide-silver composite structure nano line; the atmosphere of the low-temperature plasma processor is argon; the frequency of the low-temperature plasma processor is 65KHz, the power is 80W, and the pressure of the atmosphere is 70Pa; Gamma ray irradiation reaction 120min; The concentration of described ammonium sulfide solution is 0.5mmol / L; The molar ratio of described silver nanowire and ammonium sulfide 2:1;

[0023] Step 2. After mixing the silver nanowires, the amphiphilic solvent and the non-polar solvent, the dispersion A is obtained; after the silver telluride nanowires, the amphiphilic solv...

Embodiment 2

[0026] A method for preparing a high-transparency shielding film based on silver nanowires, comprising the following steps:

[0027] Step 1. Place the silver nanowires in a low-temperature plasma processor for 15 minutes, add the treated silver nanowires into the ammonium sulfide solution for irradiation and stirring reaction, separate solid and liquid, and wash to obtain silver sulfide-silver composite structure nano line; the atmosphere of the low-temperature plasma processor is argon; the frequency of the low-temperature plasma processor is 75KHz, the power is 100W, and the pressure of the atmosphere is 65Pa; Gamma ray irradiation reaction 90min; The concentration of described ammonium sulfide solution is 0.8mmol / L; The molar ratio of described silver nanowire and ammonium sulfide 3:1;

[0028]Step 2. After mixing the silver nanowires, the amphiphilic solvent and the non-polar solvent, the dispersion A is obtained; after the silver telluride nanowires, the amphiphilic solve...

Embodiment 3

[0031] A method for preparing a high-transparency shielding film based on silver nanowires, comprising the following steps:

[0032] Step 1. Place the silver nanowires in a low-temperature plasma processor for 12 minutes, add the treated silver nanowires into the ammonium sulfide solution for irradiation and stirring reaction, separate solid and liquid, and wash to obtain silver sulfide-silver composite structure nano line; the atmosphere of the low-temperature plasma processor is argon; the frequency of the low-temperature plasma processor is 50KHz, the power is 60W, and the pressure of the atmosphere is 45Pa; Gamma ray irradiation reaction 100min; The concentration of described ammonium sulfide solution is 0.6mmol / L; The molar ratio of described silver nanowire and ammonium sulfide is 1:1;

[0033] Step 2. After mixing the silver nanowires, the amphiphilic solvent and the non-polar solvent, the dispersion A is obtained; after the silver telluride nanowires, the amphiphilic s...

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Abstract

The invention discloses a preparation method of a high-transmittance shielding film based on silver nanowires. The preparation method comprises the steps of preparing silver sulfide-silver composite structure nanowires; preparing an assembly film with multiple layers of silver nanowires by adopting a Langmuir-Blodgett technology; preparing a modified graphene dispersion liquid, soaking the assembly film with the multiple layers of silver nanowires in the modified graphene dispersion liquid, adding a condensing agent, carrying out ultrasonic treatment, washing, and drying to obtain the high-transmittance shielding film. According to the invention, the assembly film is prepared by adopting the multi-layer combination of the silver nanowires, the silver telluride nanowires and the silver sulfide-silver composite structure nanowires, and condensation modification is conducted through the modified graphene. The prepared high-transmittance shielding film is low in sheet resistance, good in shielding effect and more excellent in light transmittance.

Description

technical field [0001] The invention relates to a method for preparing a film, in particular to a method for preparing a high-transparency shielding film based on silver nanowires. Background technique [0002] High-transparency shielding films are crucial to many optoelectronic devices and components, and are often used as electrodes in electronic devices such as liquid crystal flat panel displays, plasma displays, touch panels, organic light-emitting diodes, and solar cells. At the same time, it is also widely used as antistatic coating and electromagnetic shielding material. Generally, transparent conductive films are prepared by doped metal oxides, and the most commonly used one is indium tin oxide (ITO) conductive film, which has excellent conductivity and light transmittance. However, the ever-increasing fabrication cost, the brittleness of ITO thin films, and the high-temperature processing during fabrication limit its application in future optoelectronic devices, es...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14H05K9/00
CPCH01B5/14H01B13/0026H05K9/0088
Inventor 罗勇雷佳
Owner 四川浩宇华东科技有限公司
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