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Graphene/metal composite thin film and preparation method thereof

A graphene film, metal composite technology, applied in metal material coating process, coating, liquid chemical plating and other directions, can solve the problems of poor time stability of square resistance, prone to agglomeration, complex process, etc., to reduce square resistance , Enhance time stability, save the effect of compound process

Active Publication Date: 2016-01-13
NINGBO GRAPHENE INNOVATION CENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, graphene and metal are combined to prepare graphene / metal composite film, which needs to be coated on graphene or substrate by metal nanostructure, wherein, metal nanoparticles need to be synthesized separately, and the process is complicated; and metal nanoparticles are coated It is easy to agglomerate when it is time to increase the square resistance of the graphene / metal composite film, and the time stability of the square resistance is poor, so finding a simple and easy-to-use graphene / metal composite method is a breakthrough in the performance bottleneck of graphene film important part of

Method used

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  • Graphene/metal composite thin film and preparation method thereof
  • Graphene/metal composite thin film and preparation method thereof
  • Graphene/metal composite thin film and preparation method thereof

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preparation example Construction

[0030] The invention provides a kind of preparation method of graphene / metal composite film, comprises the following steps:

[0031] A) immersing the growth substrate with the graphene film in the reducing solution to carry out the reduction reaction to obtain a composite film of metal particles / graphene film / growth substrate;

[0032] B) transferring the metal particles / graphene film in the metal particle / graphene film / growth substrate composite film to a target substrate to obtain a graphene / metal composite film of the target substrate / metal particle / graphene film.

[0033] In the invention, firstly, the growth substrate with the graphene film is immersed in the reducing solution to carry out the reduction reaction to obtain the composite film of metal particles / graphene film / growth substrate.

[0034] In the present invention, the growth substrate with graphene film is prepared according to the following method:

[0035] The growth substrate is put into a reaction furnace,...

Embodiment 1

[0057] Putting the copper substrate into a chemical vapor reaction furnace, then introducing hydrogen and methane gas into the chemical vapor reaction furnace, and reacting at 1000°C to obtain a copper substrate with a graphene film, wherein the The volume ratio of hydrogen to methane gas is 10:1.

Embodiment 2

[0064] 1. Prepare 0.5g / L chloroauric acid solution.

[0065] 2. the copper substrate with the graphene film prepared in embodiment 1 is put into the above-mentioned diluted 0.5g / L chloroauric acid solution, and left to stand for 1 minute to obtain the composite film formed by gold particles / graphene film / copper substrate .

[0066] 3. Take out the above composite film, wash it with deionized water and blow it dry.

[0067] 4. Put the above-mentioned composite film under the condition of 110° C., use hot-melt adhesive as an adhesive, and press it with PET by rollers. A PET / gold particle / graphene film / copper substrate structure is formed.

[0068] 5. Etching the above PET / gold particles / graphene film / copper substrate structure in 10% ammonium persulfate solution.

[0069] 6. After the copper is completely etched, a graphene / metal composite film of PET / gold particles / graphene film is obtained, which is washed with deionized water and then dried.

[0070] The graphene / metal co...

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Abstract

The invention provides a preparation method for a graphene / metal composite thin film. The method comprises the following steps that (A) a growth substrate with a graphene thin film is immersed in a reduction solution to be subjected to an in-situ reduction reaction, and a metal particle / graphene thin film / growth substrate composite thin film is obtained; and (B) a metal particle / graphene thin film in the metal particle / graphene thin film / growth substrate composite thin film is transferred to a target substrate, and a target substrate / metal particle / graphene thin film composite thin film is obtained. According to the preparation method, metal particles are reduced to the graphene thin film in situ, a compositing process is omitted, and the metal particles well disperse on the graphene thin film, so that the sheet resistance of the graphene / metal composite thin film is lowered. The metal particles in the prepared graphene / metal composite thin film are clamped between the graphene thin film and the target substrate so as to be well protected, and therefore the time stability of the sheet resistance of the composite thin film is greatly enhanced.

Description

technical field [0001] The invention belongs to the technical field of graphene, in particular to a graphene / metal composite film and a preparation method thereof. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbital forms a planar two-dimensional material with a hexagonal honeycomb lattice, which is a two-dimensional material with a thickness of a single carbon atom, and its thickness is 0.334nm. As a semi-metallic material, graphene has a special pore structure, which determines its flexibility. The carrier concentration inside graphene is as high as 1013cm -2 , its theoretical mobility can reach 200,000 cm 2 / V·s, and the light transmittance of single-layer graphene reaches 97.7%. These special properties of graphene make it show broad application prospects in the fields of electronic information, new energy materials and military industry. [0003] Especially in the field of transparent conductive films, graphene has excellent optical...

Claims

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Application Information

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IPC IPC(8): C23C18/42
Inventor 陈黎汪伟刘兆平
Owner NINGBO GRAPHENE INNOVATION CENT CO LTD
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