95 results about "Zinc telluride" patented technology

The invention discloses a paper sheet quantitative detection device which is based on a terahertz time-domain spectroscopy technology and a method thereof. The detection device includes: a femtosecond laser, a beam splitter, an optical delay device, a reflective mirror, a focusing lens, a photoconductive antenna type terahertz transmitter, a polyethylene lens, a polarizer, a zinc telluride electro-optical crystal, a phase-locking amplifier, a high-power amplifier and a data collection and processing system. The invention makes use of the polyethylene lens for aligning the terahertz waves to the parallel light beams, and the polyethylene lens is used for focusing the terahertz waves on a terahertz detector after penetrating the paper sheet. The paper sheet quantitative detection method which is disclosed by the invention firstly establishes a paper sheet quantitative detection mathematical model, then respectively measures the time-domain signals of the terahertz waves penetrating the air and penetrating the paper sheet, extracts the delay time and applies the established mathematical model to calculate the paper sheet quantitative value. The invention has high precision of the measurement, strong anti-interference capability, small influence of multiple reflections and safe usage, so the invention can be used in the precise paper sheet quantitative detection of the field of paper making.

A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

The invention discloses a device and a method for quantitatively analyzing mine environment gas based on a terahertz time-domain spectroscopy system. The device comprises a femtosecond laser, a beam splitter, an optical delay device, a reflecting mirror, a polarizer, a focusing lens, a terahertz emitter, a gas sampling tank, indium tin oxide conductive glass, a zinc telluride electro-optical crystal, a high-power amplifier, a data acquiring and processing system, a quarter-wave plate, a Wollaston prism, a balance detector, a phase-locked amplifier and a computer. The method for quantitatively analyzing the mine environment gas, provided by the invention, comprises the following steps: firstly, establishing a quantitative analysis model of the mine environment gas; secondly, acquiring a terahertz spectrum of gas to be measured through the device provided by the invention; thirdly, determining the content of each component in the mine environment gas by using the established quantitative analysis model. The method has the characteristics of simple structure, operability, high analysis speed, high accuracy and the like. The method provided by the invention can be applied to mixture analysis in other fields.

The invention discloses a heterojunction type photoelectric detector and a manufacturing method of the heterojunction type photoelectric detector. The heterojunction type photoelectric detector is constructed by a p-type zinc telluride nano belt and n-type graphene. The photoelectric detector is extremely sensitive to visible light, is high in responsibility and gains and quick in response, thereby providing a good foundation for the application and the integration of nano materials in a photoelectric device.

A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO₂) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.

This invention relates to a bottom seed crystal growing technique of ZnTe monocrystal, comprising displacing the synthesized high-purity high-tellurium polycrystal ZnTe material into a PBN crucible with whose bottom being arranged with ZnTe seed crystal, sealing it in a quartz crucible and displacing it into a descending furnace of three-temperature region for crystal growth; controlling the furnace temperature and growing speed respectively at 1000-1250 degrees centigrade and 0.5-1/h, wherein multiple equivalent crucible positions are arranged inside the descending furnace for the growth of multiple crystals at the same time; after the crystal growth, regulating position of crucible and controlling the furnace temperature for in-situ annealing to the crystal to obtain ZnTe monocrystal. The bottom seed crystal growing technique of ZnTe monocrystal in this invention comprises advantages of simply structured growing furnace, convenient operation, adjustable gradient temperature inside the hearth; besides, the in-situ annealing process contributes to reducing crystal disadvantage caused by heat stress. Since multiple equivalent stations are arranged inside the furnace, multiple crystals grow at the same time, thus reducing the crystal cost and being especially suitable for scale production.

Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

A multi junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin film layers of zinc telluride and lead telluride, wherein zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of each P-type absorber layer is between the respective bandgaps, The effective bandgap of at least one P-type absorber layer is different from that of at least one other P-type absorber layer.

The present invention relates to a multilayer compound synthetic furnace device, which is characterized in that an insulation layer (2), a heating wire (3), an insulation board (4) and a synthetic reaction tube (5) are arranged in a synthetic furnace (1), the furnace chamber of the synthetic furnace is divided into a plurality of synthetic chambers with the insulation board, and a plurality of synthetic reaction tubes (5) are put in each synthetic chamber, the thermal field temperature gradient of the furnace chamber is controlled in less or equal to plus or minus 5 DEG C, and each synthetic chamber being separated ensures the security during the synthetic process. The multilayer compound synthetic furnace device is applied to the synthesis of cadmium telluride, zinc telluride and lead telluride.

The invention discloses a preparation method of a nitrogen-doped carbon-coated zinc telluride nanometer wire and application thereof serving as a sodium-ion battery negative electrode material. Firstly, a tellurium nanometer wire is synthesized by using a hydrothermal method, the tellurium nanometer wire is stirred with a silver nitrate solution at room temperature to be converted as the silver telluride nanometer wire, then silver telluride nanometer wire reacts with a zinc nitrate solution to be converted as the zinc telluride nanometer wire by using an ion exchange reaction, the zinc telluride nanometer wire is coated with dopamine hydrochloride, and the nitrogen-doped carbon-coated zinc telluride nanometer wire is obtained through high temperature calcinations under the argon or nitrogen atmosphere. The preparation method of the composite material is simple, the raw materials are cheap and easy to obtain, the obtained material has the good cycling stability and specific capacity when serving as the sodium-ion battery negative electrode, and can be taken as the excellent sodium-ion battery negative electrode material.

A solution-based route to biocompatible, cysteine-capped gold-zinc telluride (Au—ZnTe) core/shell nanoparticles with potential in biomedical applications is described. The optical properties of the core/shell nanoparticles show no features of the individual parent components. The tunable emission properties of the semiconductor shell render the system useful for imaging and biological labelling applications.

The invention discloses a preparation method of zinc telluride. The preparation method comprises the following steps: introducing an inert gas to exhaust oxygen gas after adding a material mixture of tellurium and zinc into a graphite crucible, and sealing the crucible; placing the crucible in a sealed heat-resistant container, and introducing the inert gas after exhausting the oxygen gas in the sealed heat-resistant container; regulating pressure in the heat-resistant container to 0.6-3.0 MPa, rising a temperature to 1000-1500 DEG C, and cooling after preserving the heat for 1-4 hours; exhausting gas and releasing pressure after cooling the temperature lower than 60 DEG C, taking out the material mixture to obtain the zinc telluride. According to the preparation method disclosed by the invention, in an inert atmosphere, the zinc telluride is synthesized by virtue of reaction of tellurium and zinc under a certain pressure; the preparation method is short in process time, less in needed equipment and low in excess coefficient, can be used for improving the product purity of the zinc telluride, lowering the production cost to a certain extent, and improving the production efficiency.

The invention relates to a magnetic random access memory based on an III-V group narrow bandgap semiconductor, the magnetic random access memory is characterized by sequentially comprising a substratewafer, a dielectric layer, a spin orbit torque acting layer and an MTJ structure layer from bottom to top, and the dielectric layer is made of a cadmium telluride CdTe or zinc telluride ZnTe material; and the spin orbit torque acting layer is made of a III-V group narrow bandgap semiconductor indium antimonide InSb or indium arsenide InAs with high mobility. The structure based on the III-V semiconductor material not only can be matched with an existing semiconductor CMOS process, but also can provide spin orbit coupling strength higher than that of a traditional heavy metal SOT material, andtherefore the problem of power consumption of device write-in current is effectively solved. In addition, the spin orbit coupling strength can be regulated and controlled by applying the back gate voltage, so that the power consumption of the device is further improved. And through electric field control, the programmable and storage integrated capability of the modified device array can be improved.

Zinc telluride scintillators and related devices and methods are provided.

The invention relates to the field of photovoltaic power generation materials, in particular to polycrystal single-phase zinc telluride and a preparation method thereof. The preparation method comprises the following steps: mixing raw materials including zinc particles and tellurium particles, putting the mixture into a crucible, covering the crucible with a cover, and putting the crucible into a reaction kettle; vacuumizing, heating and preheating; introducing inert gas into the reaction kettle, and gradually heating and preserving heat; after cooling, taking out the crucible, carrying out ball milling on the deposited zinc telluride crystal block, putting into a mold, shaping, and then putting into a hot pressing furnace together with the mold; vacuumizing and preheating, introducing inert gas, raising the temperature, and applying pressure to the interior of the mold for heat preservation and pressure maintaining; and cooling, and vacuumizing in the cooling process to obtain zinc telluride. The high-purity zinc telluride is prepared by adopting the zinc particles and the tellurium particles which are low in cost and high in purity as raw materials, the cost is low, time is short, the yield is high, the high-purity zinc telluride is a polycrystal single-phase compound block which is combined together in a crystal form, the density is close to theoretical density, the purity is high, the resistance value is uniform, and the best semiconductor effect can be achieved in a semiconductor film layer for photovoltaic power generation.

The invention discloses a preparation method for a zinc telluride (ZnTe) homoepitaxy layer and belongs to the technical field of semiconductor materials. The preparation method comprises the steps as follows: adopting a low-pressure metal organic chemical vapor phase epitaxy process, taking dimethyl zinc and diethyl telluride as metal organic sources and hydrogen gas as carrier gas, and growing the ZnTe homoepitaxy layer on a ZnTe (100) substrate by low-pressure metal organic chemical vapor phase epitaxy equipment. The ZnTe homoepitaxy layer prepared with the method is narrow in band edge exciton peak and XRC (X-ray diffraction rocking curve) half-width, deep energy level emission of oxygen bound excitons, dislocation-related Y rays and the like does not appear, and the results show that the epitaxial layer is very good in crystal quality. The ZnTe homoepitaxy layer prepared with the method can be used for manufacturing photoelectric devices such as green LEDs and LDs, terahertz emitters and the like, and has a wide application prospect.

The invention discloses a preparation method of a zinc telluride single crystal, and aims to solve the technical problem that the zinc telluride single crystal prepared through the existing method is low in quality. The technical scheme is that the preparation method comprises the following steps: putting a high-purity tellurium elementary substance and a synthesized zinc telluride polycrystal raw material into a quartz crucible for fused sealing under high vacuum; then putting the quartz crucible into an ACRT (Accelerated Crucible Rotation Technique) type five-temperature-region crystal growth furnace; firstly, heating the furnace at a certain heating rate, thus obtaining a preset temperature field, preserving the heat for a period of time, and cooling the crucible at a rate of 0.1 to 0.2 mm/h, wherein the temperature gradient for crystal growth is 10 +/- 1 DEG C/cm and the crystallizing temperature is 1,060 +/- 1 DEG C; and under a condition of keeping the temperature field in a growth process unchanged, after the crystal grows, cooling the crucible at 3 DEG C/h for 50 hours, then cooling the crucible at the rate of 5 DEG C/h for 100 hours, and finally turning off a power supply for furnace cooling. According to the preparation method, the ZnTe crystal with an enough length and high crystallizing quality is obtained.