Preparation method for zinc telluride homoepitaxy layer

A homoepitaxial, zinc telluride technology, applied in chemical instruments and methods, from chemically reactive gases, semiconductor/solid-state device manufacturing, etc., can solve the problem of affecting the luminescence performance of ZnTe epitaxial layer, harmful parasitic reactions and gas phase nucleation, Affect the quality of the epitaxial layer and other issues, to achieve the effect of inhibiting gas phase nucleation, inhibiting parasitic reactions, and reducing thickness

Inactive Publication Date: 2013-05-01
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] 1. During the growth of the epitaxial layer, the out-diffusion of impurity atoms in the substrate to the epitaxial layer will affect the quality of the epitaxial layer
[0005] 2. Volatile impurities from the substrate are mixed into the epitaxial layer during the growth process to cause self-doping, which will lead to a decrease in the quality of the epitaxial layer
[0006] 3. Harmful parasitic reactions and gas phase nucleation will occur during epitaxial growth
[0007] 4. The oxide on the su

Method used

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  • Preparation method for zinc telluride homoepitaxy layer
  • Preparation method for zinc telluride homoepitaxy layer
  • Preparation method for zinc telluride homoepitaxy layer

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Embodiment 1

[0044] A method for preparing a homogeneous epitaxial layer of zinc telluride, adopts a metal organic chemical vapor phase epitaxy process, uses dimethyl zinc and diethyl tellurium as metal organic sources, uses hydrogen as a carrier gas, and uses low pressure metal organic chemical vapor phase epitaxy equipment Growing zinc telluride epitaxial layer on ZnTe (100) substrate; the process conditions are as follows:

[0045] Substrate temperature during growth: 400°C;

[0046] Reaction chamber pressure: 300 Torr;

[0047] Transport rate of dimethyl zinc: 15μmol / min;

[0048] Diethyl tellurium transport rate: 15μmol / min;

[0049] Growth time: 3 hours

[0050] The operation steps of the above preparation method are as follows:

[0051] 1. Cleaning of ZnTe substrate: The (100) surface ZnTe substrate is ultrasonically cleaned in organic solvent acetone for 5 minutes, then placed in a 1% bromine methanol solution for 30 minutes, and finally rinsed with deionized water;

[0052] 2. Pass the reacti...

Embodiment 2

[0057] The process conditions are as follows:

[0058] Reaction chamber pressure: 700Torr;

[0059] Substrate temperature during growth: 380°C;

[0060] Transport rate of dimethyl zinc: 10μmol / min;

[0061] Diethyl tellurium transport rate: 10μmol / min;

[0062] Growth time: 4 hours.

[0063] The low-pressure MOVPE process prepares the zinc telluride epitaxial layer, the steps are as follows:

[0064] 1. Cleaning of ZnTe substrate: The (100) surface ZnTe substrate was ultrasonically cleaned in organic solvent acetone for 5 minutes, then placed in a 1% bromine methanol solution for 20 minutes, and finally rinsed with deionized water;

[0065] 2. Pass the reaction chamber of the MOVPE equipment into H 2 , Keep at 550°C for 30 minutes to remove the oxide on the surface of the ZnTe substrate;

[0066] 3. Control the substrate temperature at 380°C and adjust the hydrogen flow rate to maintain the transport rates of both dimethyl zinc (DMZn) and diethyl tellurium (DETe) at 10 μmol / min, and control...

Embodiment 3

[0069] The process conditions are as follows:

[0070] Substrate temperature during growth: 420°C;

[0071] Reaction chamber pressure: 500 Torr;

[0072] Transport rate of dimethyl zinc: 30μmol / min;

[0073] Diethyl tellurium transport rate: 30μmol / min;

[0074] Growth time: 2 hours;

[0075] The MOVPE process prepares the zinc telluride epitaxial layer, the steps are as follows:

[0076] 1. Cleaning of ZnTe substrate: The (100) surface ZnTe substrate was ultrasonically cleaned in organic solvent acetone for 5 minutes, then placed in a 1% bromine methanol solution for 20 minutes, and finally rinsed with deionized water;

[0077] 2. Pass the reaction chamber of the MOVPE equipment into H 2 , Keep at 420°C for 30 minutes to remove the oxide on the surface of the ZnTe substrate;

[0078] 3. Control the substrate temperature at 420°C, adjust the hydrogen flow rate, maintain the transport rates of both dimethyl zinc (DMZn) and diethyl tellurium (DETe) at 30 μmol / min, and control the reaction cha...

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Abstract

The invention discloses a preparation method for a zinc telluride (ZnTe) homoepitaxy layer and belongs to the technical field of semiconductor materials. The preparation method comprises the steps as follows: adopting a low-pressure metal organic chemical vapor phase epitaxy process, taking dimethyl zinc and diethyl telluride as metal organic sources and hydrogen gas as carrier gas, and growing the ZnTe homoepitaxy layer on a ZnTe (100) substrate by low-pressure metal organic chemical vapor phase epitaxy equipment. The ZnTe homoepitaxy layer prepared with the method is narrow in band edge exciton peak and XRC (X-ray diffraction rocking curve) half-width, deep energy level emission of oxygen bound excitons, dislocation-related Y rays and the like does not appear, and the results show that the epitaxial layer is very good in crystal quality. The ZnTe homoepitaxy layer prepared with the method can be used for manufacturing photoelectric devices such as green LEDs and LDs, terahertz emitters and the like, and has a wide application prospect.

Description

Technical field [0001] The invention relates to a method for preparing a zinc telluride homoepitaxial layer, in particular to a method for preparing a high quality zinc telluride homoepitaxial layer by controlling the growth temperature and the growth pressure. Background technique [0002] Zinc telluride (ZnTe) is an important group II-IV compound semiconductor material. ZnTe is a direct band gap, with a band gap of 2.26 eV at room temperature, so it has good application prospects in optoelectronic devices such as green LEDs, terahertz detectors, solar cells, and optical waveguides. At present, ZnTe light-emitting diodes (LED) with a room temperature emission wavelength of 550 nm have been successfully fabricated using aluminum diffusion technology. Establishing the preparation method of high-quality ZnTe epitaxial layer plays a vital role in the production of high-efficiency LEDs and laser diodes (LD). The metal organic chemical vapor phase epitaxy (MOVPE) process is a widely...

Claims

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Application Information

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IPC IPC(8): C30B25/20C30B29/48H01L21/205
Inventor 冀子武黄树来张磊郭其新徐现刚
Owner SHANDONG UNIV
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