Preparation method of cadmium zinc telluride polycrystals

A technology for cadmium zinc telluride and zinc telluride is applied in the field of preparation of cadmium zinc telluride polycrystals, which can solve the problems of waste of raw materials, unsafe, difficult mass production and the like, and achieve the effects of saving energy consumption, reducing costs and high quality

Active Publication Date: 2017-02-22
清远先导材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, it is very difficult to grow CdZnTe crystal itself, which makes the preparation of CdZnTe crystal a difficult technology. At present, the main method for preparing CdZnTe polycrystal is to mix tellurium, zinc, and cadmium simple substances, and carry out a synthesis reaction. The reaction needs to be carried out under high temperature conditions (usually 1092-1295 ° C) to meet the needs of crystal growth. This synthesis method is easy to cause the raw material vessel to burst, which is not safe, but also wastes raw materials, and the cost is high. At the same time, this high-temperature synthesis The method has poor stability and is not easy to control, and it is easy to affect the growth quality of the crystal, and it is easy to cause zinc segregation in the obtained CdZnTe polycrystal, making it difficult to carry out mass production

Method used

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preparation example Construction

[0023] The invention provides a preparation method of cadmium zinc telluride polycrystal, comprising the following steps:

[0024] A) uniformly mixing the cadmium telluride powder and the zinc telluride powder to obtain a mixed powder;

[0025] B) under vacuum conditions, the temperature of the mixed powder is raised to 600-750°C, kept warm, and pressurized to obtain the first sintered body;

[0026] C) performing a temperature reduction on the first sintered body, releasing the pressure, and performing a second temperature reduction to obtain a cadmium zinc telluride polycrystal.

[0027] According to the present invention, firstly, the cadmium telluride powder and the zinc telluride powder are uniformly mixed to obtain the mixed powder.

[0028] In the present invention, the sources of the cadmium telluride powder and the zinc telluride powder are not particularly limited, and they can be commercially available. The particle size of the cadmium telluride powder is preferab...

Embodiment 1

[0048] Mix 5kg of cadmium telluride powder with a particle size of less than 100 mesh and 0.03Kg of zinc telluride powder with a particle size of less than 100 mesh evenly to obtain a mixed powder; put the mixed powder into a hot-pressed graphite mold and place it in a hot-pressed furnace ;Evacuate the hot-press furnace to less than 5Pa, raise the temperature of the hot-press furnace to 680°C at a heating rate of 3°C / min, and keep it warm for 1.5h; 10min after the start of the above-mentioned heat preservation, pressurize to 17MPa, and keep it for 20min , start heat preservation and pressure reduction, after heat preservation for 1.5h, start to cool down, when the temperature drops to 550°C, remove the remaining pressure to zero, then cool down to 25-35°C, take out the hot-pressed graphite mold and demould, to obtain Zinc Telluride Cadmium material. Break the obtained cadmium zinc telluride material to a particle size of less than 100 mesh, put it into a hot-pressed graphite m...

Embodiment 2

[0051] Mix 5kg of cadmium telluride powder with a particle size of less than 100 mesh and 0.8Kg of zinc telluride powder with a particle size of less than 100 mesh evenly to obtain a mixed powder; put the mixed powder into a hot-pressed graphite mold and place it in a hot-pressed furnace ; Vacuum the hot-press furnace to less than 5Pa, raise the temperature of the hot-press furnace to 750°C at a heating rate of 5°C / min, and keep it warm for 2 hours; 10 minutes after the start of the above-mentioned heat preservation, pressurize to 15MPa, and keep it for 20 minutes. Start heat preservation and pressure reduction. After heat preservation for 2 hours, start to cool down. When the temperature drops to 550°C, remove the remaining pressure to zero, and then cool down to 25-35°C. Take out the hot-pressed graphite mold and demould it to obtain CdZnTe material . Break the obtained cadmium zinc telluride material to a particle size of less than 100 mesh, put it into a hot-pressed graphi...

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Abstract

The invention provides a preparation method of cadmium zinc telluride polycrystals. The preparation method comprises the following steps of A, uniformly mixing cadmium telluride powder and zinc telluride power to obtain mixed powder; B, under the vacuum condition, raising the temperature of the mixed powder to 600 to 750 DEG C; performing heat insulation and pressurization to obtain a first sintering body; C, performing primary temperature reduction on the first sintering body; relieving the pressure; then, performing secondary temperature reduction to obtain the cadmium zinc telluride polycrystals. By using the method, the cadmium zinc telluride polycrystals can be obtained through preparation at low temperature; safety is realized; the control is easy; the energy consumption is reduced; the cost is favorably reduced; in addition, the obtained cadmium zinc telluride polycrystals have high quality and no segregation. By using the method provided by the invention, the mass production can be favorably performed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of cadmium zinc telluride polycrystal. Background technique [0002] Cadmium zinc telluride crystal (English name is cadmium zinc telluride, abbreviated as CZT) is a wide bandgap compound semiconductor composed of group IIB~IVA elements. It has a sphalerite structure. With the change of Zn component content, its growth temperature From 1092 to 1295 ℃, it is an infrared crystal material with excellent performance, which is widely used in epitaxial substrates of infrared detectors and room temperature nuclear radiation detectors. CdZnTe crystal also has important application prospects in the nuclear industry, military, medicine, environment, photovoltaic power generation, astrophysics, etc. due to its excellent photoelectric properties, and has become a functional material of great engineering and strategic significance. Therefore, the preparation of Cd...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B28/02
CPCC30B28/02C30B29/48
Inventor 文崇斌朱刘胡智向何志达李琴香
Owner 清远先导材料有限公司
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